initial commit / add all books

10 files changed, 149 insertions, 0 deletions

diff --git a/284/CH12/EX12.1/ex1.sce b/284/CH12/EX12.1/ex1.sce
new file mode 100755
index 000000000..c2d4c11d1
--- /dev/null
+++ b/284/CH12/EX12.1/ex1.sce
@@ -0,0 +1,14 @@
+// Chapter 12_The junction field effect transistor

+//Caption_Device characteristics

+//Ex_1//page 557

+T=300

+Na=10^18

+e=1.6*10^-19

+eps=8.85*10^-14*11.7

+ni=1.5*10^10

+Nd=10^16      //donor concentration

+a=0.75*10^-4     //metallurgical channel thichness

+Vpo=e*a^2*Nd/(2*eps)     //internal pinch off voltage

+Vbi=0.0259*log(Na*Nd/ni^2)     //built in potential barrier

+Vp=Vbi-Vpo    //pinch off voltage

+printf('The pinch off voltage of this n-channel JFET is %1.2fV',Vp)

diff --git a/284/CH12/EX12.10/ex10.sce b/284/CH12/EX12.10/ex10.sce
new file mode 100755
index 000000000..0a96e0af7
--- /dev/null
+++ b/284/CH12/EX12.10/ex10.sce
@@ -0,0 +1,15 @@
+// Chapter 12_The junction field effect transistor

+//Caption_High electron mobility transistor

+//Ex_10//page 585

+Nd=10^18

+d=20*10^-8

+dd=500*10^-8   //thickness

+phi_B=0.85

+q=1.6*10^-19

+VG=0

+epsn=12.2  //relative dielectric constant

+Vp2=q*Nd*dd^2/(2*epsn*8.85*10^-14)   //a parameter

+x=0.22    //x=del Ec/q

+Voff=phi_B-x-Vp2     //threshold voltage

+ns=(VG-Voff)*epsn*8.85*10^-14/(q*(dd+d+80*10^-8))

+printf('The two dimensional electron concentration is %1.2f cm^-2',ns)
\ No newline at end of file
diff --git a/284/CH12/EX12.2/ex2.sce b/284/CH12/EX12.2/ex2.sce
new file mode 100755
index 000000000..e94b50930
--- /dev/null
+++ b/284/CH12/EX12.2/ex2.sce
@@ -0,0 +1,14 @@
+// Chapter 12_The junction field effect transistor

+//Caption_Device characteristics

+//Ex_2//page 558

+T=300

+Nd=10^18

+Na=2*10^16

+e=1.6*10^-19

+eps=8.85*10^-14*11.7

+ni=1.5*10^10

+Vp=2.25     //pinchoff voltage

+Vbi=0.0259*log(Na*Nd/ni^2)

+Vpo=Vp+Vbi

+a=(2*eps*Vpo/(e*Na))^0.5*10^4

+printf('Metallurgical channel thickness is %1.3f micrometer',a)

diff --git a/284/CH12/EX12.3/ex3.sce b/284/CH12/EX12.3/ex3.sce
new file mode 100755
index 000000000..06e5c2af0
--- /dev/null
+++ b/284/CH12/EX12.3/ex3.sce
@@ -0,0 +1,18 @@
+// Chapter 12_The junction field effect transistor

+//Caption_Depletion mode JFET

+//Ex_3//page 558

+T=300

+Na=10^18

+e=1.6*10^-19

+eps=8.85*10^-14*11.7

+Vbi=0.814

+Vpo=4.35

+ni=1.5*10^10

+Nd=10^16

+a=0.75*10^-4    //metallurgical channel thickness

+L=10*10^-4   //channel length

+W=30*10^-4    //channel width

+mun=1000

+Ipi=10^3*mun*(e*Nd)^2*W*a^3/(6*eps*L)

+IDmax=Ipi*(1-3*(Vbi/Vpo)*(1-(2/3)*(Vbi/Vpo)^0.5))

+printf('The maximum current is %1.3f mA while pinch off current is %1.3fmA',IDmax,Ipi)
\ No newline at end of file
diff --git a/284/CH12/EX12.4/ex4.sce b/284/CH12/EX12.4/ex4.sce
new file mode 100755
index 000000000..3653e6965
--- /dev/null
+++ b/284/CH12/EX12.4/ex4.sce
@@ -0,0 +1,9 @@
+// Chapter 12_The junction field effect transistor

+//Caption_Transconductance

+//Ex_4//page 566

+Ipi=0.522*10^-3

+Vbi=0.814   //built in potential barrier

+Vpo=4.35    //pinch off

+VGS=0

+gms_max=10^3*3*Ipi*(1-(Vbi/Vpo)^0.5)/Vpo

+printf('The maximum transconductance is %1.3f mA/V',gms_max)

diff --git a/284/CH12/EX12.5/ex5.sce b/284/CH12/EX12.5/ex5.sce
new file mode 100755
index 000000000..ffd0d7cdd
--- /dev/null
+++ b/284/CH12/EX12.5/ex5.sce
@@ -0,0 +1,15 @@
+// Chapter 12_The junction field effect transistor

+//Caption_The MESFET

+//Ex_5//page 567

+Nc=4.7*10^17

+e=1.6*10^-19

+eps=8.85*10^-14*13.1

+T=300

+phi_bn=0.89    //barrier height

+Nd=2*10^15

+Vt=0.25

+phi_n=0.0259*log(Nc/Nd)

+Vbi=phi_bn-phi_n   //built in potential barrier

+Vpo=Vbi-Vt

+a=10^4*(Vpo*2*eps/(e*Nd))^0.5

+printf('The channel thickness of GaAs is %1.3f micrometer',a)
\ No newline at end of file
diff --git a/284/CH12/EX12.6/ex6.sce b/284/CH12/EX12.6/ex6.sce
new file mode 100755
index 000000000..ad006f714
--- /dev/null
+++ b/284/CH12/EX12.6/ex6.sce
@@ -0,0 +1,18 @@
+// Chapter 12_The junction field effect transistor

+//Caption_The MESFET

+//Ex_6//page 568

+e=1.6*10^-19

+eps=8.85*10^-14*13.1

+T=300

+ni=1.8*10^6

+Na=10^18

+Nd=3*10^15

+a=0.70*10^-4

+Vbi=0.0259*log(Na*Nd/ni^2)

+Vpo=e*a^2*Nd/(2*eps)      //internal pinch off voltage

+Vt=Vbi-Vpo   //threshold voltage

+h=0.6*10^-4

+VGS=Vbi-(e*h^2*Nd/(2*eps))

+printf('The forward bias voltage required in an n channel GaAs enhancement mode pn jfet to open up a channel is %1.2f V',VGS)

+

+

diff --git a/284/CH12/EX12.7/ex7.sce b/284/CH12/EX12.7/ex7.sce
new file mode 100755
index 000000000..abd761d28
--- /dev/null
+++ b/284/CH12/EX12.7/ex7.sce
@@ -0,0 +1,16 @@
+// Chapter 12_The junction field effect transistor

+//Caption_The MESFET

+//Ex_7//page 570

+e=1.6*10^-19

+eps=8.85*10^-14*13.1

+T=300

+ni=1.8*10^6

+L=1.2*10^-4

+mun=8000

+a=0.70*10^-4

+Idi=75*10^-6

+VGS=0.5

+Vt=0.24

+kn=Idi/(VGS-Vt)^2    //conduction parameter

+W=10^4*kn*2*a*L/(mun*eps)

+printf('The required channel width is %1.2f micrometer',W)
\ No newline at end of file
diff --git a/284/CH12/EX12.8/ex8.sce b/284/CH12/EX12.8/ex8.sce
new file mode 100755
index 000000000..c313f06da
--- /dev/null
+++ b/284/CH12/EX12.8/ex8.sce
@@ -0,0 +1,19 @@
+// Chapter 12_The junction field effect transistor

+//Caption_The MESFET-Channel length modulation

+//Ex_8//page 573

+Nd=3*10^15

+eps=8.85*10^-14*11.7

+L=10

+ID1=4

+VDSsat=0  //assume

+VDS1=VDSsat+2

+VDS2=VDSsat+2.5

+

+delL2=10^4*(2*eps*(VDS2-VDSsat)/(e*Nd))^0.5   //change in length

+delL1=10^4*(2*eps*(VDS1-VDSsat)/(e*Nd))^0.5   //change in length

+//drain currents are

+ID22=ID1*(L/(L-0.5*delL2))

+ID11=ID1*(L/(L-0.5*delL1))

+rds=(VDS2-VDS1)/(ID22-ID11)

+printf('The small signal output resistance at the drain terminal due to channel length modulation effects is %1.1f kohm',rds)

+

diff --git a/284/CH12/EX12.9/ex9.sce b/284/CH12/EX12.9/ex9.sce
new file mode 100755
index 000000000..60aaf4c5f
--- /dev/null
+++ b/284/CH12/EX12.9/ex9.sce
@@ -0,0 +1,11 @@
+// Chapter 12_The junction field effect transistor

+//Caption_Cutoff frequency

+//Ex_9//page 579

+e=1.6*10^-19

+mun=1000

+L=5*10^-4

+eps=8.85*10^-14*11.7

+a=0.60*10^-4

+Nd=10^16

+fT=(e*mun*Nd*a^2)/(2*%pi*eps*L^2)*10^-9

+printf('The cutoff frequency of silicon JFET with given parameters is %1.2f GHz',fT)