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+//Example 4_26

+clc;

+clear;

+close;

+format('e',9);

+//given data : 

+T=300;//K

+e=1.6*10^-19;//C/electron

+disp("Part(a) :");

+sigma=100;//(ohm-cm)^-1

+ni=2.5*10^13;//cm^-3//For Ge

+mu_p=1800;//cm^2/V-s//For Ge

+//sigma=p0*e*mu_p, since p0>>n0

+p0=sigma/e/mu_p;//cm^-3

+n0=ni^2/p0*10^6;//m^-3

+disp(p0,"Concentration of holes(cm^-3)");

+disp(n0,"Concentration of electrones(m^-3)");

+disp("Part(b) :");

+sigma=0.1;//(ohm-cm)^-1

+ni=1.5*10^10;//cm^-3//For Si

+mu_n=1300;//cm^2/V-s//For Si

+//sigma=n0*e*mu_p, since n0>>p0

+n0=sigma/e/mu_n;//cm^-3

+p0=ni^2/n0*10^6;//m^-3

+disp(n0,"Concentration of electrones(cm^-3)");

+disp(p0,"Concentration of holes(m^-3)");