initial commit / add all books

8 files changed, 200 insertions, 0 deletions

diff --git a/2594/CH7/EX7.1/Ex7_1.sce b/2594/CH7/EX7.1/Ex7_1.sce
new file mode 100755
index 000000000..17226a3bd
--- /dev/null
+++ b/2594/CH7/EX7.1/Ex7_1.sce
@@ -0,0 +1,21 @@
+clc

+Dnb=20

+disp("Dnb = "+string(Dnb)+" cm^2/s") //initializiation the value of one of base parametre of NPN transistor.

+nB=10^4

+disp("nB = "+string(nB)+" /cm^3") //initializiation the value of one of base parametre of NPN transistor.

+xB=1*10^-6

+disp("xB = "+string(xB)+" m") //initializiation the value of one of base parametre of NPN transistor.

+AB=10^-4

+disp("AB = "+string(AB)+" cm^2") //initializiation the value of one of base parametre of NPN transistor.

+e=1.6*10^-19

+disp("e = "+string(e)+" columns") //initializiation the value of electronic charge .

+Vbe=0.5

+disp("Vbe = "+string(Vbe)+" V") //initializiation the value of base emitter voltage of NPN transistor..

+VT=0.0259

+disp("VT = "+string(VT)+" V") //initializiation the value of threshold voltage.

+WB=10^-4

+disp("WB = "+string(WB)+" cm") //initializiation the value of base width of NPN transistor.

+Io=((e*AB*Dnb*nB)/(WB))

+disp("Magnitude of Io,Io=((e*AB*Dnb*nB)/(WB)))="+string(Io)+" A")//calculation

+Ic=Io*(exp(Vbe/VT)-1)

+disp("Collector current,Ic=Io((exp(Vbe/VT))-1))="+string(Ic)+" A")//calculation

diff --git a/2594/CH7/EX7.10/Ex7_10.sce b/2594/CH7/EX7.10/Ex7_10.sce
new file mode 100755
index 000000000..0970df7d8
--- /dev/null
+++ b/2594/CH7/EX7.10/Ex7_10.sce
@@ -0,0 +1,11 @@
+clc

+ro=500*10^3

+disp("ro = "+string(ro)+" ohm") //initializiation the value of output resistance .

+Vce1=7

+disp("Vce1 = "+string(Vce1)+" V") //initializiation the initial value of collector emitter voltage .

+Vce2=1

+disp("Vce2 = "+string(Vce2)+" V") //initializiation the final value of collector emitter  voltage .

+Vce=6

+disp("change in the collector-emitter voltage,Vce1-Vce2 = "+string(Vce)+" V") //calculation.

+Ic=(Vce/ro)

+disp("change in the collector current,Ic=(Vce/ro))="+string(Ic)+" A")//calculation

diff --git a/2594/CH7/EX7.2/Ex7_2.sce b/2594/CH7/EX7.2/Ex7_2.sce
new file mode 100755
index 000000000..7d1deba80
--- /dev/null
+++ b/2594/CH7/EX7.2/Ex7_2.sce
@@ -0,0 +1,17 @@
+clc

+NE=5*10^17

+disp("NE = "+string(NE)+" /cm^3") //initializiation the value of doping concentration in the emitter .

+NB=10^16

+disp("NB = "+string(NB)+" /cm^3") //initializiation the value of doping concentration in the base.

+NC=10^15

+disp("NC = "+string(NC)+" /cm^3") //initializiation the value of doping concentration in the collector.

+WB=0.8*10^-4

+disp("WB = "+string(WB)+" cm") //initializiation the value of base width of NPN transistor.

+no=1.5*10^10

+disp("no = "+string(no)+"cm^-3") //initializing the intrinsic carrier concentration.

+pEO=(no^2/NE)

+disp("Number of Majority holes in the emitter,pEO=(no^2/NE) )="+string(pEO)+" /cm^3")//calculation

+nBO=(no^2/NB)

+disp("Number of Majority holes in the base,nBO=(no^2/NB))="+string(nBO)+" /cm^3")//calculation

+pCO=(no^2/NC)

+disp("Number of Majority holes in the collector,pCO=(no^2/NC))="+string(pCO)+" /cm^3")//calculation

diff --git a/2594/CH7/EX7.3/Ex7_3.sce b/2594/CH7/EX7.3/Ex7_3.sce
new file mode 100755
index 000000000..466140c77
--- /dev/null
+++ b/2594/CH7/EX7.3/Ex7_3.sce
@@ -0,0 +1,28 @@
+clc

+NE=5*10^17

+disp("NE = "+string(NE)+" /cm^3") //initializiation of doping concentration in the emitter. 

+NB=10^16

+disp("NB = "+string(NB)+" /cm^3") //initializiation of doping concentration in the base. 

+NC=10^15

+disp("NC = "+string(NC)+" /cm^3") //initializiation of doping concentration in the collector. 

+WB=0.8*10^-4

+disp("WB = "+string(WB)+" cm") //initializiation  the value of base width of NPN transistor.

+no=1.5*10^10

+disp("no = "+string(no)+"cm^-3") //initializing the value of  intrinsic carrier concentration.

+VT=0.0259

+disp("VT = "+string(VT)+" V") //initializiation the value of threshold voltage.

+VJ=0.6258

+disp("VJ=Vbe = "+string(VJ)+" V") //initializiation the value of base emitter voltage.

+pEO=(no^2/NE)

+disp("Number of Majority holes in the emitter,pEO=(no^2/NE) )="+string(pEO)+" /cm^3")//calculation

+nBO=(no^2/NB)

+disp("Number of Majority holes in the base,nBO=(no^2/NB))="+string(nBO)+" /cm^3")//calculation

+pCO=(no^2/NC)

+disp("Number of Majority holes in the collector,pCO=(no^2/NC))="+string(pCO)+" /cm^3")//calculation

+pE=pEO*(exp(VJ/VT))

+disp("pE(O)=pEO*(exp(VJ/VT)))="+string(pE)+" /cm^3")//calculation

+nB=nBO*(exp(VJ/VT))

+disp("nB=(nBO*(exp(VJ/VT))))="+string(nB)+" /cm^3")//calculation

+

+

+//the answer provided in the book for pE,nB is some what different than actual calculated. 

diff --git a/2594/CH7/EX7.5/Ex7_5.sce b/2594/CH7/EX7.5/Ex7_5.sce
new file mode 100755
index 000000000..66a7fafd0
--- /dev/null
+++ b/2594/CH7/EX7.5/Ex7_5.sce
@@ -0,0 +1,11 @@
+clc

+Db=10

+disp("Db = "+string(Db)+" cm^2/s") //initializiation the value of one of parametere of the transistor.

+Bt=0.95

+disp("Bt = "+string(Bt)) //initializiation the value of base transport factor of the transistor.

+tb=10^-7

+disp("tb = "+string(tb)+" s") //initializiation the value of one of parametere of the transistor.

+Lp=(sqrt(Db*tb))

+disp("Lp=(sqrt(Db*tb)))="+string(Lp)+" cm")//calculation

+WB=(Lp*(acosh(1/Bt)))

+disp("WB=(Lp*(acosh(1/Bt)))="+string(WB)+" cm")//calculation

diff --git a/2594/CH7/EX7.7/Ex7_7.sce b/2594/CH7/EX7.7/Ex7_7.sce
new file mode 100755
index 000000000..e4c49bfe3
--- /dev/null
+++ b/2594/CH7/EX7.7/Ex7_7.sce
@@ -0,0 +1,11 @@
+clc

+Jro=10^-9

+disp("Jro = "+string(Jro)+" A/cm^2") //initializiation the value of recombination current density.

+Jo=10^-12

+disp("Jo = "+string(Jo)+" A/cm^2") //initializiation the value of reverse saturation current density.

+Vbe=0.5

+disp("Vbe = "+string(Vbe)+" V") //initializiation the value of base emitter voltage.

+VT=0.0259

+disp("VT = "+string(VT)+" V") //initializiation the value of threshold voltage.

+delta=(1+((Jro/Jo)*(exp((-Vbe)/(2*VT)))))^-1

+disp("delta (recombination factor)=(1+((Jro/Jo)*(exp((-Vbe)/(2*VT)))))^-1)="+string(delta))//calculation.

diff --git a/2594/CH7/EX7.8/Ex7_8.sce b/2594/CH7/EX7.8/Ex7_8.sce
new file mode 100755
index 000000000..3aa1c489f
--- /dev/null
+++ b/2594/CH7/EX7.8/Ex7_8.sce
@@ -0,0 +1,68 @@
+clc

+NE=1*10^17

+disp("NE = "+string(NE)+" /cm^3") //initializiation the value of doping concentration of emitter in the NPN transistor. 

+NB=10^15

+disp("NB = "+string(NB)+" /cm^3") //initializiation the value of doping concentration of base in the NPN transistor. 

+WE=0.6*10^-4

+disp("WE = "+string(WE)+" cm") //initializiation the value of one of parametre of the transistor.

+WB=0.8*10^-4

+disp("WB = "+string(WB)+" cm") //initializiation the value of one of parametre of the transistor.

+no=1.5*10^10

+disp("no = "+string(no)+"cm^-3") //initializing the value of intrinsic carrier concentration.

+e=1.6*10^-19

+disp("e = "+string(e)+" columns") //initializiation the value of electronic charge 

+DE=15

+disp("DE = "+string(DE)+" cm^2/s") //initializiation the value of one of parametere of the transistor.

+DB=20

+disp("DB = "+string(DB)+" cm^2/s") //initializiation the value of one of parametere of the transistor.

+tE=0.2*10^-6

+disp("tE = "+string(tE)+" s") //initializiation the value of one of parametere of the transistor.

+tB=0.1*10^-6

+disp("tB = "+string(tB)+" s") //initializiation the value of one of parametere of the transistor.

+Vbe=0.60

+disp("Vbe = "+string(Vbe)+" V") //initializiation the value of base emitter voltage .

+VT=0.0259

+disp("VT = "+string(VT)+" V") //initializiation the value of threshold voltage.

+Jro=2*10^-8

+disp("Jro = "+string(Jro)+" A/cm^2") //initializiation the value of recombination current density.

+LE=(sqrt(DE*tE))

+disp("LE=(sqrt(DE*tE)))="+string(LE)+" cm")//calculation

+LB=(sqrt(DB*tB))

+disp("LB=(sqrt(DB*tB)))="+string(LB)+" cm")//calculation

+pEO=(no^2/NE)

+disp("Number of Majority holes in the emitter,pEO=(no^2/NE) )="+string(pEO)+" /cm^3")//calculation

+nBO=(no^2/NB)

+disp("Number of Majority holes in the base,nBO=(no^2/NB))="+string(nBO)+" /cm^3")//calculation

+Y=(1+(((NB*DE*LB)/(NE*DB*LE))*((tanh(WB/LB)/tanh(WE/LE)))))^(-1)

+disp("Emitter injection efficiency,Y=(1+((NB*DE*LB)/(NE*DB*LE)*(tanh(WB/LB)/tanh(WE/LE)))) )="+string(Y))//calculation

+Bt=(cosh(WB/LB))^-1

+disp("Base transport factor,Bt=(cosh(WB/LB))^-1)="+string(Bt))//calculation

+Jo=((e*DB*nBO)/(LB*tanh(WB/LB)))

+disp("Reverse saturation current Density,Jro=((e*DB*nBO)/(LB*tanh(WB/LB))))="+string(Jo)+"A/cm^2")//calculation

+delta=(1+((Jro/Jo)*(exp((-Vbe)/(2*VT)))))^-1

+disp("delta(recombination factor)=(1+((Jro/Jo)*(exp((-Vbe)/(2*VT)))))^-1)="+string(delta)+" A")//calculation

+a=Bt*delta*Y

+disp("common base current amplification factor,(alpha=Bt*delta*Y)="+string(a))//calculation

+B=(a/(1-a))

+disp("common emitter current amplification factor,Beta=(a/(1-a)))="+string(B))//calculation

+//the value of NE provided in the question is different than used in the solution .

+//I have used the value (while solving) provided in the question (i.e NE=10^17/cm^3). 

+

+

+

+

+

+

+

+

+

+

+

+

+

+

+

+

+

+

+

diff --git a/2594/CH7/EX7.9/Ex7_9.sce b/2594/CH7/EX7.9/Ex7_9.sce
new file mode 100755
index 000000000..2c8c47f0e
--- /dev/null
+++ b/2594/CH7/EX7.9/Ex7_9.sce
@@ -0,0 +1,33 @@
+clc

+NB=5*10^16

+disp("NB = "+string(NB)+" /cm^3") //initializiation the doping concentration in the base.

+NC=2*10^15

+disp("NC = "+string(NC)+" /cm^3") //initializiation the doping concentration in the collector.

+WBm=0.6*10^-4

+disp("WBm = "+string(WBm)+" cm") //initializiation the value of actual base width.

+e=1.6*10^-19

+disp("e = "+string(e)+" columns") //initializiation the value of electronic charge.

+VCB1=1

+disp("VCB1 = "+string(VCB1)+" V") //initializiation the initial value of collector base voltage .

+VCB2=4

+disp("VCB2 = "+string(VCB2)+" V") //initializiation the final value of collector base voltage.

+Er=11.9

+disp("Er = "+string(Er)) //initializing value of relative dielectric permittivity constant .

+Eo=8.854*10^-14

+disp("Eo = "+string(Eo)+" F/cm") //initializing value of permittivity of free space.

+no=1.5*10^10

+disp("no = "+string(no)+"cm^-3") //initializing  the value of intrinsic charge carriers

+VT=0.0259

+disp("VT = "+string(VT)+" V") //initializiation the value of threshold voltage.

+VBI=VT*(log((NB*NC)/no^2))

+disp(" VBI=VT*(log((NB*NC)/no^2))="+string(VBI)+" V")//calculation

+WBS1=((2*Eo*Er*(VBI+VCB1)/e)*(NC/NB)*(1/(NC+NB)))^(1/2)

+disp("WBS=((2*Eo*Er*(VBI+VCB1)/e)*(NC/NB)*(1/(NC+NB)))^(1/2))="+string(WBS1)+" cm")//calculation

+Wb1=WBm-WBS1

+disp("Neutral base width for VCB1,WB(neutral)=WBm-WBS1="+string(Wb1)+" cm")//calculation

+WBS2=((2*Eo*Er*(VBI+VCB2)/e)*(NC/NB)*(1/(NC+NB)))^(1/2)

+disp("WBS=((2*Eo*Er*(VBI+VCB2)/e)*(NC/NB)*(1/(NC+NB)))^(1/2))="+string(WBS2)+" cm")//calculation

+Wb2=WBm-WBS2

+disp("Neutral base width for VCB2,WB(neutral)=WBm-WBS2="+string(Wb2)+" cm")//calculation

+deltaWbneutral=Wb1-Wb2

+disp("change in the neutal base width ,deltaWb(neutral)=Wb1-Wb2="+string(deltaWbneutral)+" cm")//calculation