From b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b Mon Sep 17 00:00:00 2001 From: priyanka Date: Wed, 24 Jun 2015 15:03:17 +0530 Subject: initial commit / add all books --- 2594/CH7/EX7.1/Ex7_1.sce | 21 ++++++++++++++ 2594/CH7/EX7.10/Ex7_10.sce | 11 ++++++++ 2594/CH7/EX7.2/Ex7_2.sce | 17 ++++++++++++ 2594/CH7/EX7.3/Ex7_3.sce | 28 +++++++++++++++++++ 2594/CH7/EX7.5/Ex7_5.sce | 11 ++++++++ 2594/CH7/EX7.7/Ex7_7.sce | 11 ++++++++ 2594/CH7/EX7.8/Ex7_8.sce | 68 ++++++++++++++++++++++++++++++++++++++++++++++ 2594/CH7/EX7.9/Ex7_9.sce | 33 ++++++++++++++++++++++ 8 files changed, 200 insertions(+) create mode 100755 2594/CH7/EX7.1/Ex7_1.sce create mode 100755 2594/CH7/EX7.10/Ex7_10.sce create mode 100755 2594/CH7/EX7.2/Ex7_2.sce create mode 100755 2594/CH7/EX7.3/Ex7_3.sce create mode 100755 2594/CH7/EX7.5/Ex7_5.sce create mode 100755 2594/CH7/EX7.7/Ex7_7.sce create mode 100755 2594/CH7/EX7.8/Ex7_8.sce create mode 100755 2594/CH7/EX7.9/Ex7_9.sce (limited to '2594/CH7') diff --git a/2594/CH7/EX7.1/Ex7_1.sce b/2594/CH7/EX7.1/Ex7_1.sce new file mode 100755 index 000000000..17226a3bd --- /dev/null +++ b/2594/CH7/EX7.1/Ex7_1.sce @@ -0,0 +1,21 @@ +clc +Dnb=20 +disp("Dnb = "+string(Dnb)+" cm^2/s") //initializiation the value of one of base parametre of NPN transistor. +nB=10^4 +disp("nB = "+string(nB)+" /cm^3") //initializiation the value of one of base parametre of NPN transistor. +xB=1*10^-6 +disp("xB = "+string(xB)+" m") //initializiation the value of one of base parametre of NPN transistor. +AB=10^-4 +disp("AB = "+string(AB)+" cm^2") //initializiation the value of one of base parametre of NPN transistor. +e=1.6*10^-19 +disp("e = "+string(e)+" columns") //initializiation the value of electronic charge . +Vbe=0.5 +disp("Vbe = "+string(Vbe)+" V") //initializiation the value of base emitter voltage of NPN transistor.. +VT=0.0259 +disp("VT = "+string(VT)+" V") //initializiation the value of threshold voltage. +WB=10^-4 +disp("WB = "+string(WB)+" cm") //initializiation the value of base width of NPN transistor. +Io=((e*AB*Dnb*nB)/(WB)) +disp("Magnitude of Io,Io=((e*AB*Dnb*nB)/(WB)))="+string(Io)+" A")//calculation +Ic=Io*(exp(Vbe/VT)-1) +disp("Collector current,Ic=Io((exp(Vbe/VT))-1))="+string(Ic)+" A")//calculation diff --git a/2594/CH7/EX7.10/Ex7_10.sce b/2594/CH7/EX7.10/Ex7_10.sce new file mode 100755 index 000000000..0970df7d8 --- /dev/null +++ b/2594/CH7/EX7.10/Ex7_10.sce @@ -0,0 +1,11 @@ +clc +ro=500*10^3 +disp("ro = "+string(ro)+" ohm") //initializiation the value of output resistance . +Vce1=7 +disp("Vce1 = "+string(Vce1)+" V") //initializiation the initial value of collector emitter voltage . +Vce2=1 +disp("Vce2 = "+string(Vce2)+" V") //initializiation the final value of collector emitter voltage . +Vce=6 +disp("change in the collector-emitter voltage,Vce1-Vce2 = "+string(Vce)+" V") //calculation. +Ic=(Vce/ro) +disp("change in the collector current,Ic=(Vce/ro))="+string(Ic)+" A")//calculation diff --git a/2594/CH7/EX7.2/Ex7_2.sce b/2594/CH7/EX7.2/Ex7_2.sce new file mode 100755 index 000000000..7d1deba80 --- /dev/null +++ b/2594/CH7/EX7.2/Ex7_2.sce @@ -0,0 +1,17 @@ +clc +NE=5*10^17 +disp("NE = "+string(NE)+" /cm^3") //initializiation the value of doping concentration in the emitter . +NB=10^16 +disp("NB = "+string(NB)+" /cm^3") //initializiation the value of doping concentration in the base. +NC=10^15 +disp("NC = "+string(NC)+" /cm^3") //initializiation the value of doping concentration in the collector. +WB=0.8*10^-4 +disp("WB = "+string(WB)+" cm") //initializiation the value of base width of NPN transistor. +no=1.5*10^10 +disp("no = "+string(no)+"cm^-3") //initializing the intrinsic carrier concentration. +pEO=(no^2/NE) +disp("Number of Majority holes in the emitter,pEO=(no^2/NE) )="+string(pEO)+" /cm^3")//calculation +nBO=(no^2/NB) +disp("Number of Majority holes in the base,nBO=(no^2/NB))="+string(nBO)+" /cm^3")//calculation +pCO=(no^2/NC) +disp("Number of Majority holes in the collector,pCO=(no^2/NC))="+string(pCO)+" /cm^3")//calculation diff --git a/2594/CH7/EX7.3/Ex7_3.sce b/2594/CH7/EX7.3/Ex7_3.sce new file mode 100755 index 000000000..466140c77 --- /dev/null +++ b/2594/CH7/EX7.3/Ex7_3.sce @@ -0,0 +1,28 @@ +clc +NE=5*10^17 +disp("NE = "+string(NE)+" /cm^3") //initializiation of doping concentration in the emitter. +NB=10^16 +disp("NB = "+string(NB)+" /cm^3") //initializiation of doping concentration in the base. +NC=10^15 +disp("NC = "+string(NC)+" /cm^3") //initializiation of doping concentration in the collector. +WB=0.8*10^-4 +disp("WB = "+string(WB)+" cm") //initializiation the value of base width of NPN transistor. +no=1.5*10^10 +disp("no = "+string(no)+"cm^-3") //initializing the value of intrinsic carrier concentration. +VT=0.0259 +disp("VT = "+string(VT)+" V") //initializiation the value of threshold voltage. +VJ=0.6258 +disp("VJ=Vbe = "+string(VJ)+" V") //initializiation the value of base emitter voltage. +pEO=(no^2/NE) +disp("Number of Majority holes in the emitter,pEO=(no^2/NE) )="+string(pEO)+" /cm^3")//calculation +nBO=(no^2/NB) +disp("Number of Majority holes in the base,nBO=(no^2/NB))="+string(nBO)+" /cm^3")//calculation +pCO=(no^2/NC) +disp("Number of Majority holes in the collector,pCO=(no^2/NC))="+string(pCO)+" /cm^3")//calculation +pE=pEO*(exp(VJ/VT)) +disp("pE(O)=pEO*(exp(VJ/VT)))="+string(pE)+" /cm^3")//calculation +nB=nBO*(exp(VJ/VT)) +disp("nB=(nBO*(exp(VJ/VT))))="+string(nB)+" /cm^3")//calculation + + +//the answer provided in the book for pE,nB is some what different than actual calculated. diff --git a/2594/CH7/EX7.5/Ex7_5.sce b/2594/CH7/EX7.5/Ex7_5.sce new file mode 100755 index 000000000..66a7fafd0 --- /dev/null +++ b/2594/CH7/EX7.5/Ex7_5.sce @@ -0,0 +1,11 @@ +clc +Db=10 +disp("Db = "+string(Db)+" cm^2/s") //initializiation the value of one of parametere of the transistor. +Bt=0.95 +disp("Bt = "+string(Bt)) //initializiation the value of base transport factor of the transistor. +tb=10^-7 +disp("tb = "+string(tb)+" s") //initializiation the value of one of parametere of the transistor. +Lp=(sqrt(Db*tb)) +disp("Lp=(sqrt(Db*tb)))="+string(Lp)+" cm")//calculation +WB=(Lp*(acosh(1/Bt))) +disp("WB=(Lp*(acosh(1/Bt)))="+string(WB)+" cm")//calculation diff --git a/2594/CH7/EX7.7/Ex7_7.sce b/2594/CH7/EX7.7/Ex7_7.sce new file mode 100755 index 000000000..e4c49bfe3 --- /dev/null +++ b/2594/CH7/EX7.7/Ex7_7.sce @@ -0,0 +1,11 @@ +clc +Jro=10^-9 +disp("Jro = "+string(Jro)+" A/cm^2") //initializiation the value of recombination current density. +Jo=10^-12 +disp("Jo = "+string(Jo)+" A/cm^2") //initializiation the value of reverse saturation current density. +Vbe=0.5 +disp("Vbe = "+string(Vbe)+" V") //initializiation the value of base emitter voltage. +VT=0.0259 +disp("VT = "+string(VT)+" V") //initializiation the value of threshold voltage. +delta=(1+((Jro/Jo)*(exp((-Vbe)/(2*VT)))))^-1 +disp("delta (recombination factor)=(1+((Jro/Jo)*(exp((-Vbe)/(2*VT)))))^-1)="+string(delta))//calculation. diff --git a/2594/CH7/EX7.8/Ex7_8.sce b/2594/CH7/EX7.8/Ex7_8.sce new file mode 100755 index 000000000..3aa1c489f --- /dev/null +++ b/2594/CH7/EX7.8/Ex7_8.sce @@ -0,0 +1,68 @@ +clc +NE=1*10^17 +disp("NE = "+string(NE)+" /cm^3") //initializiation the value of doping concentration of emitter in the NPN transistor. +NB=10^15 +disp("NB = "+string(NB)+" /cm^3") //initializiation the value of doping concentration of base in the NPN transistor. +WE=0.6*10^-4 +disp("WE = "+string(WE)+" cm") //initializiation the value of one of parametre of the transistor. +WB=0.8*10^-4 +disp("WB = "+string(WB)+" cm") //initializiation the value of one of parametre of the transistor. +no=1.5*10^10 +disp("no = "+string(no)+"cm^-3") //initializing the value of intrinsic carrier concentration. +e=1.6*10^-19 +disp("e = "+string(e)+" columns") //initializiation the value of electronic charge +DE=15 +disp("DE = "+string(DE)+" cm^2/s") //initializiation the value of one of parametere of the transistor. +DB=20 +disp("DB = "+string(DB)+" cm^2/s") //initializiation the value of one of parametere of the transistor. +tE=0.2*10^-6 +disp("tE = "+string(tE)+" s") //initializiation the value of one of parametere of the transistor. +tB=0.1*10^-6 +disp("tB = "+string(tB)+" s") //initializiation the value of one of parametere of the transistor. +Vbe=0.60 +disp("Vbe = "+string(Vbe)+" V") //initializiation the value of base emitter voltage . +VT=0.0259 +disp("VT = "+string(VT)+" V") //initializiation the value of threshold voltage. +Jro=2*10^-8 +disp("Jro = "+string(Jro)+" A/cm^2") //initializiation the value of recombination current density. +LE=(sqrt(DE*tE)) +disp("LE=(sqrt(DE*tE)))="+string(LE)+" cm")//calculation +LB=(sqrt(DB*tB)) +disp("LB=(sqrt(DB*tB)))="+string(LB)+" cm")//calculation +pEO=(no^2/NE) +disp("Number of Majority holes in the emitter,pEO=(no^2/NE) )="+string(pEO)+" /cm^3")//calculation +nBO=(no^2/NB) +disp("Number of Majority holes in the base,nBO=(no^2/NB))="+string(nBO)+" /cm^3")//calculation +Y=(1+(((NB*DE*LB)/(NE*DB*LE))*((tanh(WB/LB)/tanh(WE/LE)))))^(-1) +disp("Emitter injection efficiency,Y=(1+((NB*DE*LB)/(NE*DB*LE)*(tanh(WB/LB)/tanh(WE/LE)))) )="+string(Y))//calculation +Bt=(cosh(WB/LB))^-1 +disp("Base transport factor,Bt=(cosh(WB/LB))^-1)="+string(Bt))//calculation +Jo=((e*DB*nBO)/(LB*tanh(WB/LB))) +disp("Reverse saturation current Density,Jro=((e*DB*nBO)/(LB*tanh(WB/LB))))="+string(Jo)+"A/cm^2")//calculation +delta=(1+((Jro/Jo)*(exp((-Vbe)/(2*VT)))))^-1 +disp("delta(recombination factor)=(1+((Jro/Jo)*(exp((-Vbe)/(2*VT)))))^-1)="+string(delta)+" A")//calculation +a=Bt*delta*Y +disp("common base current amplification factor,(alpha=Bt*delta*Y)="+string(a))//calculation +B=(a/(1-a)) +disp("common emitter current amplification factor,Beta=(a/(1-a)))="+string(B))//calculation +//the value of NE provided in the question is different than used in the solution . +//I have used the value (while solving) provided in the question (i.e NE=10^17/cm^3). + + + + + + + + + + + + + + + + + + + diff --git a/2594/CH7/EX7.9/Ex7_9.sce b/2594/CH7/EX7.9/Ex7_9.sce new file mode 100755 index 000000000..2c8c47f0e --- /dev/null +++ b/2594/CH7/EX7.9/Ex7_9.sce @@ -0,0 +1,33 @@ +clc +NB=5*10^16 +disp("NB = "+string(NB)+" /cm^3") //initializiation the doping concentration in the base. +NC=2*10^15 +disp("NC = "+string(NC)+" /cm^3") //initializiation the doping concentration in the collector. +WBm=0.6*10^-4 +disp("WBm = "+string(WBm)+" cm") //initializiation the value of actual base width. +e=1.6*10^-19 +disp("e = "+string(e)+" columns") //initializiation the value of electronic charge. +VCB1=1 +disp("VCB1 = "+string(VCB1)+" V") //initializiation the initial value of collector base voltage . +VCB2=4 +disp("VCB2 = "+string(VCB2)+" V") //initializiation the final value of collector base voltage. +Er=11.9 +disp("Er = "+string(Er)) //initializing value of relative dielectric permittivity constant . +Eo=8.854*10^-14 +disp("Eo = "+string(Eo)+" F/cm") //initializing value of permittivity of free space. +no=1.5*10^10 +disp("no = "+string(no)+"cm^-3") //initializing the value of intrinsic charge carriers +VT=0.0259 +disp("VT = "+string(VT)+" V") //initializiation the value of threshold voltage. +VBI=VT*(log((NB*NC)/no^2)) +disp(" VBI=VT*(log((NB*NC)/no^2))="+string(VBI)+" V")//calculation +WBS1=((2*Eo*Er*(VBI+VCB1)/e)*(NC/NB)*(1/(NC+NB)))^(1/2) +disp("WBS=((2*Eo*Er*(VBI+VCB1)/e)*(NC/NB)*(1/(NC+NB)))^(1/2))="+string(WBS1)+" cm")//calculation +Wb1=WBm-WBS1 +disp("Neutral base width for VCB1,WB(neutral)=WBm-WBS1="+string(Wb1)+" cm")//calculation +WBS2=((2*Eo*Er*(VBI+VCB2)/e)*(NC/NB)*(1/(NC+NB)))^(1/2) +disp("WBS=((2*Eo*Er*(VBI+VCB2)/e)*(NC/NB)*(1/(NC+NB)))^(1/2))="+string(WBS2)+" cm")//calculation +Wb2=WBm-WBS2 +disp("Neutral base width for VCB2,WB(neutral)=WBm-WBS2="+string(Wb2)+" cm")//calculation +deltaWbneutral=Wb1-Wb2 +disp("change in the neutal base width ,deltaWb(neutral)=Wb1-Wb2="+string(deltaWbneutral)+" cm")//calculation -- cgit