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author | priyanka | 2015-06-24 15:03:17 +0530 |
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committer | priyanka | 2015-06-24 15:03:17 +0530 |
commit | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (patch) | |
tree | ab291cffc65280e58ac82470ba63fbcca7805165 /2594/CH7/EX7.8/Ex7_8.sce | |
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initial commit / add all books
Diffstat (limited to '2594/CH7/EX7.8/Ex7_8.sce')
-rwxr-xr-x | 2594/CH7/EX7.8/Ex7_8.sce | 68 |
1 files changed, 68 insertions, 0 deletions
diff --git a/2594/CH7/EX7.8/Ex7_8.sce b/2594/CH7/EX7.8/Ex7_8.sce new file mode 100755 index 000000000..3aa1c489f --- /dev/null +++ b/2594/CH7/EX7.8/Ex7_8.sce @@ -0,0 +1,68 @@ +clc
+NE=1*10^17
+disp("NE = "+string(NE)+" /cm^3") //initializiation the value of doping concentration of emitter in the NPN transistor.
+NB=10^15
+disp("NB = "+string(NB)+" /cm^3") //initializiation the value of doping concentration of base in the NPN transistor.
+WE=0.6*10^-4
+disp("WE = "+string(WE)+" cm") //initializiation the value of one of parametre of the transistor.
+WB=0.8*10^-4
+disp("WB = "+string(WB)+" cm") //initializiation the value of one of parametre of the transistor.
+no=1.5*10^10
+disp("no = "+string(no)+"cm^-3") //initializing the value of intrinsic carrier concentration.
+e=1.6*10^-19
+disp("e = "+string(e)+" columns") //initializiation the value of electronic charge
+DE=15
+disp("DE = "+string(DE)+" cm^2/s") //initializiation the value of one of parametere of the transistor.
+DB=20
+disp("DB = "+string(DB)+" cm^2/s") //initializiation the value of one of parametere of the transistor.
+tE=0.2*10^-6
+disp("tE = "+string(tE)+" s") //initializiation the value of one of parametere of the transistor.
+tB=0.1*10^-6
+disp("tB = "+string(tB)+" s") //initializiation the value of one of parametere of the transistor.
+Vbe=0.60
+disp("Vbe = "+string(Vbe)+" V") //initializiation the value of base emitter voltage .
+VT=0.0259
+disp("VT = "+string(VT)+" V") //initializiation the value of threshold voltage.
+Jro=2*10^-8
+disp("Jro = "+string(Jro)+" A/cm^2") //initializiation the value of recombination current density.
+LE=(sqrt(DE*tE))
+disp("LE=(sqrt(DE*tE)))="+string(LE)+" cm")//calculation
+LB=(sqrt(DB*tB))
+disp("LB=(sqrt(DB*tB)))="+string(LB)+" cm")//calculation
+pEO=(no^2/NE)
+disp("Number of Majority holes in the emitter,pEO=(no^2/NE) )="+string(pEO)+" /cm^3")//calculation
+nBO=(no^2/NB)
+disp("Number of Majority holes in the base,nBO=(no^2/NB))="+string(nBO)+" /cm^3")//calculation
+Y=(1+(((NB*DE*LB)/(NE*DB*LE))*((tanh(WB/LB)/tanh(WE/LE)))))^(-1)
+disp("Emitter injection efficiency,Y=(1+((NB*DE*LB)/(NE*DB*LE)*(tanh(WB/LB)/tanh(WE/LE)))) )="+string(Y))//calculation
+Bt=(cosh(WB/LB))^-1
+disp("Base transport factor,Bt=(cosh(WB/LB))^-1)="+string(Bt))//calculation
+Jo=((e*DB*nBO)/(LB*tanh(WB/LB)))
+disp("Reverse saturation current Density,Jro=((e*DB*nBO)/(LB*tanh(WB/LB))))="+string(Jo)+"A/cm^2")//calculation
+delta=(1+((Jro/Jo)*(exp((-Vbe)/(2*VT)))))^-1
+disp("delta(recombination factor)=(1+((Jro/Jo)*(exp((-Vbe)/(2*VT)))))^-1)="+string(delta)+" A")//calculation
+a=Bt*delta*Y
+disp("common base current amplification factor,(alpha=Bt*delta*Y)="+string(a))//calculation
+B=(a/(1-a))
+disp("common emitter current amplification factor,Beta=(a/(1-a)))="+string(B))//calculation
+//the value of NE provided in the question is different than used in the solution .
+//I have used the value (while solving) provided in the question (i.e NE=10^17/cm^3).
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