initial commit / add all books

8 files changed, 207 insertions, 0 deletions

diff --git a/2561/CH1/EX1.1/Ex1_1.sce b/2561/CH1/EX1.1/Ex1_1.sce
new file mode 100755
index 000000000..57df8b04e
--- /dev/null
+++ b/2561/CH1/EX1.1/Ex1_1.sce
@@ -0,0 +1,28 @@
+//Ex_1.1

+//refer to fig 1.2(c) and given d.c operating points VGKQ=-2 V,VAKQ=250 V,IAQ=-1.2 mA

+clc

+VAK2=300

+disp("VAK2 = "+string(VAK2)+" volts") // value of anode voltage2 

+VAK1=170

+disp("VAK1 = "+string(VAK1)+" volts") // value of anode voltage1 

+IA2=2*10^(-3)

+disp("IA2 = "+string(IA2)+" ampere") // value of anode current2

+IA1=0*10^(-3)

+disp("IA1 = "+string(IA1)+" ampere") // value of anode current1

+rP=(VAK2-VAK1)/(IA2-IA1)//anode resistance at VGK=VGKQ

+disp("resistance,rP =(VAK2-VAK1)/(IA2-IA1)="+string(rP)+" ohm") //calculation

+VGK2=-2.5

+disp("VGK2 = "+string(VGK2)+" volts") // value of grid voltage2 

+VGK3=-1.5

+disp("VGK1 = "+string(VGK3)+" volts") // value of grid voltage1

+VAK3=200

+disp("VAK3 = "+string(VAK3)+" volts") // value of anode voltage1 

+u=(VAK2-VAK3)/(VGK2-VGK3)//amplification factor at IA=IAQ

+disp("amplification factor,u =(VAK2-VAK1)/(VGK2-VGK1)="+string(u)+" unitless ") //calculation

+IA4=2.2*10^(-3)

+disp("IA4 = "+string(IA4)+" ampere") // value of anode current4

+IA3=0.5*10^(-3)

+disp("IA1 = "+string(IA3)+" ampere") // value of anode current1

+gm=(IA4-IA3)/(VGK2-VGK3)// transconductance at VAK=VAKQ

+disp("transconductance,gm =(IAK4-IAK3)/(VGK2-VGK3)="+string(gm)+" ampere/volt ") //calculation

+//mistake of negative sign for answers for u(amplification factor) and gm(transconductance)in book

diff --git a/2561/CH1/EX1.2/Ex1_2.sce b/2561/CH1/EX1.2/Ex1_2.sce
new file mode 100755
index 000000000..fc5fea809
--- /dev/null
+++ b/2561/CH1/EX1.2/Ex1_2.sce
@@ -0,0 +1,34 @@
+//Ex1_2

+clc

+d=0.5*10^(-2)

+disp("d = "+string(d)+"metre") //initializing value of distance b/w plates

+l=2*10^(-2)

+disp("l = "+string(l)+"metre") //initializing value of length of plates

+L=20*10^(-2)

+disp("L = "+string(L)+"metre") //initializing value of distance b/w centre of plates and screen

+Va=2000

+disp("Va = "+string(Va)+"volts") ////initializing value ofanode voltage

+Vd=100

+disp("Vd = "+string(Vd)+"volts") //initializing value of deflecting voltage

+m=9.11*10^(-31)

+disp("m = "+string(m)+"Kg") //mass of electron

+q=1.6*10^(-19)

+disp("q = "+string(q)+"coulomb") //charge on an electron

+disp("horizontal beam velocity,Vx =(2*Va*q/m)^(0.5) metre/second") //formula

+Vx =(2*Va*q/m)^(0.5)

+disp("horizontal beam velocity,Vx =(2*Va*q/m)^(0.5)= "+string(Vx)+" metre/second")//calculation

+disp("transit time,t1 =(l/Vx) second") //formula

+t1=(l/Vx)

+disp("transit time,t1 =(l/Vx)= "+string(t1)+" second")//calculation

+disp("vertical beam velocity,Vy =(q*Vd*l/d*m*Vx) metre/second") //formula

+Vy=((q*Vd*l)/(d*m*Vx))

+disp("vertical beam velocity,Vy =(q*Vd*l/d*m*Vx)= "+string(Vy)+" metre/second")//calculation

+disp("vertical displacement,D =((l*L*Vd)/(2*d*Va) metre")//formula

+D =(l*L*Vd)/(2*d*Va)

+disp("vertical displacement,D =((l*L*Vd)/(2*d*Va)="+string(D)+" metre")//calculation

+disp("sensitivity of CRT,S =(0.5*l*L)/(d*Va) metre/volt")//formula

+S =(0.5*l*L)/(d*Va)

+disp("sensitivity of CRT,S =(0.5*l*L)/(d*Va)="+string(S)+" metre/volt")//calculation

+

+

+

diff --git a/2561/CH1/EX1.3/Ex1_3.sce b/2561/CH1/EX1.3/Ex1_3.sce
new file mode 100755
index 000000000..aeed1d189
--- /dev/null
+++ b/2561/CH1/EX1.3/Ex1_3.sce
@@ -0,0 +1,23 @@
+//Ex1-3

+clc

+m=9.11*10^(-31)

+disp("m = "+string(m)+" Kg") //mass of electron

+q=1.6*10^(-19)

+disp("q = "+string(q)+" coulomb") //charge on an electron

+B=1.5*10^(-3)

+disp("B = "+string(B)+ " wb/m^2") //initializing value of magnetic field

+l=5*10^(-2)

+disp("l = "+string(l)+" metre") //initializing axial length of magnetic field

+L=30*10^(-2)

+disp("L = "+string(L)+" metre") //initializing value of distance of screen from centre of magnetic field

+Va=10000

+disp("Va = "+string(Va)+" volts") ////initializing value of anode voltage

+disp("horizontal beam velocity,Vx =(2*Va*q/m)^(0.5) metre/second") //formula

+Vx =(2*Va*q/m)^(0.5)

+disp("horizontal beam velocity,Vx =(2*Va*q/m)^(0.5)= "+string(Vx)+" metre/second")//calculation

+disp("radius,r =(m*Vx)/(B*q) metre") //formula

+r =(m*Vx)/(B*q)

+disp("radius,r =(m*Vx)/(B*q)= "+string(r)+" metre")//calculation

+disp("deflection,D =(L*l)/r) metre")//formula

+D =(L*l)/r

+disp("deflection,D =(L*l)/r)="+string(D)+" metre")//calculation

diff --git a/2561/CH1/EX1.4/Ex1_4.sce b/2561/CH1/EX1.4/Ex1_4.sce
new file mode 100755
index 000000000..6c2d8da46
--- /dev/null
+++ b/2561/CH1/EX1.4/Ex1_4.sce
@@ -0,0 +1,21 @@
+//Ex-1.4

+clc

+q=1.6*10^(-19)

+disp("q = "+string(q)+"coulomb") //charge on an electron

+I=10

+disp("I = "+string(I)+"Ampere") //initializing value of current

+r=64.25

+disp("radius,r = "+string(r)+" mils")//initializing value of radius of wire

+function[metres]=mils2metres(mils)

+metres=(mils*2.54)/(1000*100)

+endfunction

+[r1]=mils2metres(r)   

+disp("r1 = "+string(r1)+" metre")

+n=5*10^(28)

+disp("n = "+string(n)+" electrons/m^3") // electrons concentration in copper

+A=(%pi*r1^2) //formulae                            

+disp("cross sectional area,A =(%pi*r1^2)= "+string(A)+" square metre")//calculation

+v=(I)/(A*q*n)//formulae(I=A*q*n*v)

+disp("drift velocity,v=(I)/(A*q*n)="+string(v)+" metre/second")//calculation

+

+ 

diff --git a/2561/CH1/EX1.5/Ex1_5.sce b/2561/CH1/EX1.5/Ex1_5.sce
new file mode 100755
index 000000000..68b892f06
--- /dev/null
+++ b/2561/CH1/EX1.5/Ex1_5.sce
@@ -0,0 +1,11 @@
+//Ex1_5

+clc

+A=10*10^(-6); p1=10^(-4); p2=10^(3);p3=10^(10);l=1*10^(-2); //initializations

+disp("cross sectional area,A ="+string(A)+"merer square") 

+disp("resitivity(rho),p1 ="+string(p1)+" ohm-m")

+disp("resitivity(rho),p2 ="+string(p2)+" ohm-m")

+disp("resitivity(rho),p3 ="+string(p3)+" ohm-m")

+disp("conductor length,l ="+string(l)+" metre")

+disp(" resistance for copper,R = p1*l/A = "+string(p1*l/A)+"ohm") //calculations for copper

+disp(" resistance for silicon,R = p2*l/A = "+string(p2*l/A)+"ohm") //calculations for silicon

+disp(" resistance for glass,R = p3*l/A = "+string(p3*l/A)+"ohm") //calculations for glass

diff --git a/2561/CH1/EX1.6/Ex1_6.sce b/2561/CH1/EX1.6/Ex1_6.sce
new file mode 100755
index 000000000..5c23b7d70
--- /dev/null
+++ b/2561/CH1/EX1.6/Ex1_6.sce
@@ -0,0 +1,30 @@
+//Ex1_6

+clc

+ni = 1.45*10^10 //initializations

+nV = 5*10^22 //initializations

+un = 1500 //initializations

+up = 0475//initializations

+T = 300 //initializations

+I=10^(-6)

+disp("I = "+string(I)+"Ampere") //initializing value of current

+A=(50*10^(-4))^2; l=0.5 //initializations

+q=1.59*10^(-19) //charge on an electron

+disp("intrinsic charge concentration,ni = "+string(ni)+" /centimetre cube")

+disp("silicon atoms concntration, nV = "+string(nV)+" /centimetre cube ")

+

+disp("electron mobility,un = "+string(un)+" cm.sq/V-s")

+disp("hole mobility,up = "+string(up)+"cm.sq/V-s")

+disp("temperature,T = "+string(T)+"K")

+disp("q = "+string(q)+"coulomb") //charge on an electron

+disp("cross sectional area,A ="+string(A)+"cm square") 

+disp("conductor length,l ="+string(l)+"cm")

+ N=nV/ni

+disp("relative concentration,N =nV/ni= "+string(N)+" silicon atoms per electron -hole pair") //calculation

+sigma=(1.59*10^(-19)*(1.45*10^10)*(1500+0475))

+disp("intrinsic conductivityi,sigma =(1.59*10^(-19)*(1.45*10^10)*(1500+0475))= "+string(sigma)+" (ohm-cm)^-1") //calculation

+pi =(1/sigma)//formulae

+disp("resitivity(rho),pi =(1/sigma)="+string(pi)+" ohm-cm")//calculation

+R=(2.22*10^5*0.5)/0.000025

+disp(" resistance for silicon,R =((2.22*10^5*0.5)/0.000025) = "+string(R)+" ohm") //calculations for silicon

+V=I*R

+disp(" voltage drop,V =I*R = "+string(V)+" V") //calculations 

diff --git a/2561/CH1/EX1.7/Ex1_7.sce b/2561/CH1/EX1.7/Ex1_7.sce
new file mode 100755
index 000000000..f85c0eb83
--- /dev/null
+++ b/2561/CH1/EX1.7/Ex1_7.sce
@@ -0,0 +1,34 @@
+//Ex1_7

+clc

+ni = 1.45*10^10 //initializations

+nV = 5*10^22 //initializations

+un = 1500 //initializations

+up = 0475//initializations

+T = 300 //initializations

+I=10^(-6)

+disp("I = "+string(I)+"Ampere") //initializing value of current

+A=(50*10^(-4))^2; l=0.5 //initializations

+q=1.59*10^(-19) //charge on an electron

+disp("intrinsic charge concentration,ni = "+string(ni)+" /centimetre cube")

+disp("silicon atoms concntration, nV = "+string(nV)+" /centimetre cube ")

+

+disp("electron mobility,un = "+string(un)+" cm.sq/V-s")

+disp("hole mobility,up = "+string(up)+" cm.sq/V-s")

+disp("temperature,T = "+string(T)+" K")

+disp("q = "+string(q)+"coulomb") //charge on an electron

+disp("cross sectional area,A ="+string(A)+" cm square") 

+disp("conductor length,l ="+string(l)+" cm")

+nD=nV/10^6//formulae

+disp("donor concentration,nD= nV/10^6="+string(nD)+" /cm.cube")//calculation

+nn=nD//formulae

+disp("resulting mobile electron concentration,nn= nD="+string(nn)+" /cm.cube")//calculation

+pn= ni^2/nD//formulae

+disp("resulting hole concentration,pn= ni^2/nD="+string(pn)+" /cm.cube")//calculation

+sigma=q*nD*un//formulae

+disp("n-type semiconductor conductivity,sigma=q*nD*un= "+string(sigma)+" (ohm-cm)^-1") //calculation

+pn =(1/sigma)

+disp("doped silicon resitivity(rho),pn =(1/sigma)="+string(pn)+" ohm-cm")//calculation

+R=(0.084*0.5)/A

+disp(" resistance for silicon,R =((0.084*0.5)/A) = "+string(R)+" ohm") //calculations for silicon

+V=I*R

+disp(" voltage drop,V =I*R = "+string(V)+" V") //calculations 

diff --git a/2561/CH1/EX1.8/Ex1_8.sce b/2561/CH1/EX1.8/Ex1_8.sce
new file mode 100755
index 000000000..034904f51
--- /dev/null
+++ b/2561/CH1/EX1.8/Ex1_8.sce
@@ -0,0 +1,26 @@
+//Ex1_8

+clc

+q=1.59*10^(-19) //charge on an electron

+disp("q = "+string(q)+"coulomb") //charge on an electron

+d=0.037

+disp("dimension of semiconductor,d="+string(d)+" cm")

+A=(d^2) //area formulae for square shaped semiconductor

+disp("cross sectional area,A =d^2="+string(A)+" cm square") 

+x=10^(-4)

+disp("thickness,x ="+string(x)+" cm")

+x0=0

+disp("thickness,x0 ="+string(x0)+" cm")

+p=9.22*10^(15)//

+disp("hole concentration at x,p= "+string(p)+" /cm-cube")//calculation

+p0=0//

+disp("hole concentration at x0,p0= "+string(p0)+" /cm-cube")//calculation

+dp=(p-p0)//formulae

+dx=(x-x0)//formulae

+disp(" change in concentration at ,dp= "+string(dp)+" /cm-cube")//calculation

+disp("change in thickness,dx= "+string(dx)+" cm")//calculation

+(dp/dx)==(p-p0)/(x-x0)//formulae

+disp(" slope,(dp/dx) =(p-p0)/(x-x0)="+string(dp/dx)+" holes/cm-cube")//calculation

+Dp=12

+disp("hole diffusion constant,Dp= "+string(Dp)+" cm-sq/s")//calculation

+Ip=A*q*Dp*(dp/dx)

+disp(" hole diffusion current,Ip =A*q*Dp*(dp/dx)="+string(Ip)+" ampere")//calculation