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diff --git a/2561/CH1/EX1.6/Ex1_6.sce b/2561/CH1/EX1.6/Ex1_6.sce
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+//Ex1_6
+clc
+ni = 1.45*10^10 //initializations
+nV = 5*10^22 //initializations
+un = 1500 //initializations
+up = 0475//initializations
+T = 300 //initializations
+I=10^(-6)
+disp("I = "+string(I)+"Ampere") //initializing value of current
+A=(50*10^(-4))^2; l=0.5 //initializations
+q=1.59*10^(-19) //charge on an electron
+disp("intrinsic charge concentration,ni = "+string(ni)+" /centimetre cube")
+disp("silicon atoms concntration, nV = "+string(nV)+" /centimetre cube ")
+
+disp("electron mobility,un = "+string(un)+" cm.sq/V-s")
+disp("hole mobility,up = "+string(up)+"cm.sq/V-s")
+disp("temperature,T = "+string(T)+"K")
+disp("q = "+string(q)+"coulomb") //charge on an electron
+disp("cross sectional area,A ="+string(A)+"cm square") 
+disp("conductor length,l ="+string(l)+"cm")
+ N=nV/ni
+disp("relative concentration,N =nV/ni= "+string(N)+" silicon atoms per electron -hole pair") //calculation
+sigma=(1.59*10^(-19)*(1.45*10^10)*(1500+0475))
+disp("intrinsic conductivityi,sigma =(1.59*10^(-19)*(1.45*10^10)*(1500+0475))= "+string(sigma)+" (ohm-cm)^-1") //calculation
+pi =(1/sigma)//formulae
+disp("resitivity(rho),pi =(1/sigma)="+string(pi)+" ohm-cm")//calculation
+R=(2.22*10^5*0.5)/0.000025
+disp(" resistance for silicon,R =((2.22*10^5*0.5)/0.000025) = "+string(R)+" ohm") //calculations for silicon
+V=I*R
+disp(" voltage drop,V =I*R = "+string(V)+" V") //calculations