initial commit / add all books

10 files changed, 152 insertions, 0 deletions

diff --git a/2534/CH9/EX9.1/Ex9_1.sce b/2534/CH9/EX9.1/Ex9_1.sce
new file mode 100755
index 000000000..8531fbf41
--- /dev/null
+++ b/2534/CH9/EX9.1/Ex9_1.sce
@@ -0,0 +1,16 @@
+//Ex9_1

+clc

+h = 5*10^-4      //channel height in centimeters

+a= (1/2)*h       //channel width in centimeters

+rho = 10         //resistivity in ohm_cm

+sigma = 1/rho    //conductivity in mho/cm

+micro_p = 500      //mobility in cm_sq/Vs

+apsilent_r = 12  //relative permiability in F/cm of silicon

+apsilent_not=8.854*10^-14  //permiability in vaccum in F/cm

+disp("a = "+string(a)+"cm")

+disp("sigma = "+string(sigma)+"mho/cm")

+disp("micro_p = "+string(micro_p)+"cm-sq/Vs")

+disp("apsilent_r = "+string(apsilent_r)+"F/cm")

+Vp = (a^2)*sigma/(2*apsilent_r*apsilent_not*micro_p) // pinch off voltage for silicon p channel FET

+disp("Vp = (a^2)*sigma/(2*apsilent_r*apsilent_not*micro_p)")

+disp("Vp = "+string(Vp)+"V")

diff --git a/2534/CH9/EX9.10/Ex9_10.sce b/2534/CH9/EX9.10/Ex9_10.sce
new file mode 100755
index 000000000..adc8b8126
--- /dev/null
+++ b/2534/CH9/EX9.10/Ex9_10.sce
@@ -0,0 +1,18 @@
+//Ex9_10

+clc

+VGS = -2//voltage across gate and source

+IDSS = 8*10^-3//maximum drain current

+Vp = -6//pinch-off voltage

+disp("IDSS = "+string(IDSS)+"A")

+disp("Vp = "+string(Vp)+"V")

+disp("VGS = "+string(VGS)+"V")

+ID = IDSS*(1-(VGS/Vp))^2

+disp("ID = IDSS*(1-(VGS/Vp))^2 = "+string(ID)+"A")//drainm current

+RD = 2*10^3//drain resistance

+VDD = 12//drain voltage

+VDS = VDD - ID*RD

+disp("VDD = "+string(VDD)+"V")//drain voltage

+disp("RD = "+string(RD)+"ohm")//drain resistance

+disp("VDS = VDD - ID*RD = "+string(VDS)+"V")//voltage across drain and source

+

+// note : notification used for saturated drain-soucre current is given wrong in question i.e., IDS but is right in solution i.e., IDSS.

diff --git a/2534/CH9/EX9.2/Ex9_2.sce b/2534/CH9/EX9.2/Ex9_2.sce
new file mode 100755
index 000000000..0383655eb
--- /dev/null
+++ b/2534/CH9/EX9.2/Ex9_2.sce
@@ -0,0 +1,22 @@
+//Ex9_2

+clc

+//calculating for conductance:

+delta_ID = (4*10^-3)-(2*10^-3)//change in drain current in amperes

+delta_VGS = 3-2//chande in gate-source voltage in volts

+disp("delta_ID = "+string(delta_ID)+"A")

+disp("delta_VGS = "+string(delta_VGS)+"V")

+gm = delta_ID/delta_VGS//condutance at VDS = constant

+disp("gm = delta_ID/delta_VGS")

+disp("gm = "+string(gm)+" mho")

+//calculating for drain resistance:

+delta_ID = (3.2-3)*10^-3//change in drain current in amperes

+delta_VDS = (12-8)//change in voltage across drai and source

+disp("delta_ID = "+string(delta_ID)+"A")

+disp("delta_VDS = "+string(delta_VDS)+"V")

+rd = delta_VDS/delta_ID

+disp("rd = delta_VDS/delta_ID")

+disp("rd = "+string(rd)+" ohm")

+//calculating for micro:

+micro  = rd*gm//amplification factor

+disp("micro = rd*gm")

+disp("micro = "+string(micro))

diff --git a/2534/CH9/EX9.3/Ex9_3.sce b/2534/CH9/EX9.3/Ex9_3.sce
new file mode 100755
index 000000000..1d86f3407
--- /dev/null
+++ b/2534/CH9/EX9.3/Ex9_3.sce
@@ -0,0 +1,18 @@
+//Ex9_3

+clc

+disp("Vp = (a^2)*sigma/(2*apsilent*micro_p)")//piunch off voltage

+h = 2*10^-4      //channel height in centimeters

+a= h/2       //channel width in centimeters

+rho = 1         //resistivity in ohm_cm

+sigma = 1/rho    //conductivity in mho/cm

+micro_p = 1800      //mobility in cm_sq/Vs

+apsilent_r = 16  //relative permiability in F/cm of germanium

+apsilent_not=8.854*10^-14  //permiability in vaccum in F/cm

+disp("a = "+string(a)+"cm")

+disp("rho = "+string(rho)+"ohm-cm")

+disp("sigma = "+string(sigma)+"mho/cm")

+disp("micro = "+string(micro_p)+"cm_sq/Vs")

+disp("apsilent_r = "+string(apsilent_r)+"F/cm")

+disp("apsilent_not = "+string(apsilent_not)+"F/cm")

+Vp = (a^2)*sigma/(2*apsilent_r*apsilent_not*micro_p) // pinch off voltage for germanium p_channel FET

+disp("Vp = "+string(Vp)+"V")

diff --git a/2534/CH9/EX9.4/Ex9_4.sce b/2534/CH9/EX9.4/Ex9_4.sce
new file mode 100755
index 000000000..fdc60aa62
--- /dev/null
+++ b/2534/CH9/EX9.4/Ex9_4.sce
@@ -0,0 +1,15 @@
+//Ex9_4

+clc

+gm1= 2*10^-3; gm2 =4*10^-3//conductance

+disp("gm1 = "+string(gm1)+"mho")

+disp("gm2 = "+string(gm2)+"mho")

+Effective_gm = gm1+gm2

+disp("Effective gm = gm1 + gm2 = "+string(Effective_gm)+"mho")//resulant conductance

+rd1 = 20*10^3; rd2 = 30*10^3//resistances

+Effective_rd = (rd1*rd2)/(rd1+rd2)

+disp("rd1 = "+string(rd1)+"ohm")

+disp("rd2 = "+string(rd2)+"ohm")

+disp("Effective rd = (rd1*rd2)/(rd1+rd2) = "+string(Effective_rd)+"ohm")//resulant resistance

+

+

+

diff --git a/2534/CH9/EX9.5/Ex9_5.sce b/2534/CH9/EX9.5/Ex9_5.sce
new file mode 100755
index 000000000..ac5d980f9
--- /dev/null
+++ b/2534/CH9/EX9.5/Ex9_5.sce
@@ -0,0 +1,8 @@
+//Ex9_5

+clc

+VGS = 4// voltage applied to gate terminal

+IG = 2*10^-9//current flowing in gate

+RGS = VGS/IG

+disp("VGs = "+string(VGS)+"V")

+disp("IG = "+string(IG)+"A")

+disp("RGS = VGS/IG = "+string(RGS)+"ohm")//resistance brtween gate and source

diff --git a/2534/CH9/EX9.6/Ex9_6.sce b/2534/CH9/EX9.6/Ex9_6.sce
new file mode 100755
index 000000000..9e84b664f
--- /dev/null
+++ b/2534/CH9/EX9.6/Ex9_6.sce
@@ -0,0 +1,11 @@
+//Ex9_6

+clc

+Vp = -4//pinch off voltage

+ID = 4*10^-3//drain current

+IDSS = 6*10^-3//maximum drain current

+disp("Vp = "+string(Vp)+"V")

+disp("ID = "+string(ID)+"A")

+disp("IDSS = "+string(IDSS)+"A")

+VGS = abs(Vp)*((ID/IDSS)^.5-1)

+disp("VGS = Vp*((ID/IDSS)^.5-1) = "+string(VGS)+"V")//voltage across gate and source

+

diff --git a/2534/CH9/EX9.7/Ex9_7.sce b/2534/CH9/EX9.7/Ex9_7.sce
new file mode 100755
index 000000000..61d052285
--- /dev/null
+++ b/2534/CH9/EX9.7/Ex9_7.sce
@@ -0,0 +1,15 @@
+//Ex9_7

+clc

+//parameters of JFET 1:

+rd1 = 20*10^3//resistance

+gm1 = 3*10^-3//conductance

+disp("rd1 = "+string(rd1)+"ohm")

+disp("gm1 = "+string(gm1)+"mho")

+//parameters of JFET 2:

+rd2 = 40*10^3//resistance

+gm2 = 4*10^-3//conductance

+disp("rd2 = "+string(rd2)+"ohm")

+disp("gm2 = "+string(gm2)+"mho")

+//the given JFETs are connected in parallel manner

+micro = [(rd1*rd2*gm1)+(rd1*rd2*gm2)]/(rd1+rd2)

+disp("micro = (rd1*rd2*gm1)+(rd1*rd2*gm2)/(rd1+rd2) = "+string(micro))//amplification factor

diff --git a/2534/CH9/EX9.8/Ex9_8.sce b/2534/CH9/EX9.8/Ex9_8.sce
new file mode 100755
index 000000000..6ba52fccb
--- /dev/null
+++ b/2534/CH9/EX9.8/Ex9_8.sce
@@ -0,0 +1,17 @@
+//Ex9_8

+clc

+//according to the given figure in the textbook for problem 8 in chapter 9:

+VGS = -2//voltage across gate and source

+IDSS = 6*10^-3//maximum drain current

+Vp = -6//pinch-off voltage

+disp("IDSS = "+string(IDSS)+"A")

+disp("Vp = "+string(Vp)+"V")

+disp("VGS = "+string(VGS)+"V")

+ID = IDSS*(1-(VGS/Vp))^2

+disp("ID = IDSS*(1-(VGS/Vp))^2 = "+string(ID)+"A")//drainm current

+Rd = 2*10^3//drain resistance

+VDD = 9//drain voltage

+VDS = VDD - ID*Rd

+disp("VDD = "+string(VDD)+"V")//drain voltage

+disp("Rd = "+string(Rd)+"ohm")//drain resistance

+disp("VDS = VDD - ID*Rd = "+string(VDS)+"V")//voltage across drain and source

diff --git a/2534/CH9/EX9.9/Ex9_9.sce b/2534/CH9/EX9.9/Ex9_9.sce
new file mode 100755
index 000000000..1909cc431
--- /dev/null
+++ b/2534/CH9/EX9.9/Ex9_9.sce
@@ -0,0 +1,12 @@
+//Ex9_9

+clc

+Vp = -4//pinch off voltage

+VGS = -1.5//gate source voltage

+VDS_minimum = VGS - Vp//minimum VDS for Pinch Off voltage

+disp("Vp = "+string(Vp)+"V")

+disp("VGS = "+string(VGS)+"V")

+disp("VDS_minimum = VGS - Vp = "+string(VDS_minimum)+"V")

+IDSS = 6*10^-3//maximum drain current

+ID = IDSS*(1-(VGS/Vp))^2//drain current at VGS = 0V

+disp("IDSS = "+string(IDSS)+"A")

+disp("ID = IDSS*(1-(VGS/Vp))^2 = "+string(ID)+"A")