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authorpriyanka2015-06-24 15:03:17 +0530
committerpriyanka2015-06-24 15:03:17 +0530
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+//scilab 5.4.1
+//Windows 7 operating system
+//chapter 13 Field-Effect Transistors
+clc
+clear
+//For a n-channel JFET
+IDSS=10*10^-3//IDSS=saturation drain current in Ampere when VGS(gate-to-source voltage)=0V
+Vp=(-4)//Vp=pinch-off voltage
+VGS=(-2.5)//VGS=gate-to-source voltage
+//By Shockley's equation
+IDS=IDSS*(1-(VGS/Vp))^2//IDS=saturation drain current to be calculated for given value of VGS
+format("v",5)
+disp("mA",IDS/10^-3,"The drain current for given value of VGS is=")//converting IDS in terms of mA
+VDSmin=VGS-Vp//VDSmin=minimum value of drain-to-source voltage for the onset of the saturation region
+format("v",5)
+disp("V",VDSmin,"The minimum value of VDS for saturation is=")