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author | priyanka | 2015-06-24 15:03:17 +0530 |
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committer | priyanka | 2015-06-24 15:03:17 +0530 |
commit | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (patch) | |
tree | ab291cffc65280e58ac82470ba63fbcca7805165 /2300/CH13/EX13.16.8/Ex13_8.sce | |
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initial commit / add all books
Diffstat (limited to '2300/CH13/EX13.16.8/Ex13_8.sce')
-rwxr-xr-x | 2300/CH13/EX13.16.8/Ex13_8.sce | 16 |
1 files changed, 16 insertions, 0 deletions
diff --git a/2300/CH13/EX13.16.8/Ex13_8.sce b/2300/CH13/EX13.16.8/Ex13_8.sce new file mode 100755 index 000000000..6e9b2a1db --- /dev/null +++ b/2300/CH13/EX13.16.8/Ex13_8.sce @@ -0,0 +1,16 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 13 Field-Effect Transistors
+clc
+clear
+//For a n-channel JFET
+IDSS=10*10^-3//IDSS=saturation drain current in Ampere when VGS(gate-to-source voltage)=0V
+Vp=(-4)//Vp=pinch-off voltage
+VGS=(-2.5)//VGS=gate-to-source voltage
+//By Shockley's equation
+IDS=IDSS*(1-(VGS/Vp))^2//IDS=saturation drain current to be calculated for given value of VGS
+format("v",5)
+disp("mA",IDS/10^-3,"The drain current for given value of VGS is=")//converting IDS in terms of mA
+VDSmin=VGS-Vp//VDSmin=minimum value of drain-to-source voltage for the onset of the saturation region
+format("v",5)
+disp("V",VDSmin,"The minimum value of VDS for saturation is=")
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