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+//scilab 5.4.1

+//Windows 7 operating system

+//chapter 13 Field-Effect Transistors

+clc

+clear

+IDSS=10*10^-3//IDSS=saturation drain current in Ampere when VGS(gate-to-source voltage)=0V

+Vp=-2//Vp=pinch-off voltage

+VDD=20//VDD=drain supply voltage

+RL=1*10^3//RL=load resistance in ohms

+Rs=2*1000//Rs=resistance connected to source terminal in ohms

+R1=12*10^6//R1=resistance in the voltage divider network in ohms

+R2=8*10^6//R2=resistance in the voltage divider network in ohms

+VT=(R2/(R1+R2))*VDD//VT=Thevenin voltage

+//VGS=VT-(ID*Rs)

+//By Shockley's equation

+//IDS=IDSS*(1-(VGS/Vp))^2 where IDS=saturation drain current to be calculated for given value of VGS

+//Substituting VGS=(VGS-ID*Rs) we get ID=IDS

+//(10*ID^2)-(101*ID)+250=0.........(1)where ID is obtained in mA

+ID1=(101+sqrt((101^2)-(40*250)))/(2*10)

+format("v",5)

+ID2=(101-sqrt((101^2)-(40*250)))/(2*10)//ID1,ID2 are the 2 roots of the above equation (1)

+format("v",5)

+disp("mA",ID1,"ID1=")

+disp("mA",ID2,"ID2=")

+//For ID1

+VGS=VT-(ID1*Rs)//VGS=gate-to-source voltage calculated for ID1

+if (Vp>VGS) then

+    disp("mA",ID1,"As Vp>(VGS calculated using ID1), the value rejected is ID1=")

+end

+disp("mA",ID2,"Therefore,the drain current is =")

+ID=ID2*10^-3//converting ID2 in terms of Amperes

+VGS=VT-(ID*Rs)//VGS=gate-to-source voltage

+disp("V",VGS,"VGS=")

+VDS=VDD-(ID*(RL+Rs))//VDS=drain-to-source voltage

+format("v",2)

+disp("V",VDS,"VDS=")

+if(Vp<VGS & VDS>(VGS-Vp))

+    disp("As Vp=(-2)<(VGS=-0.68V) and VDS=7V>(VGS-Vp),it is checked that the JFET operates in the saturation region ")

+end