diff options
| author | priyanka | 2015-06-24 15:03:17 +0530 |
|---|---|---|
| committer | priyanka | 2015-06-24 15:03:17 +0530 |
| commit | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (patch) | |
| tree | ab291cffc65280e58ac82470ba63fbcca7805165 /2300/CH13/EX13.16.12/Ex13_12.sce | |
| download | Scilab-TBC-Uploads-b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b.tar.gz Scilab-TBC-Uploads-b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b.tar.bz2 Scilab-TBC-Uploads-b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b.zip | |
initial commit / add all books
Diffstat (limited to '2300/CH13/EX13.16.12/Ex13_12.sce')
| -rwxr-xr-x | 2300/CH13/EX13.16.12/Ex13_12.sce | 13 |
1 files changed, 13 insertions, 0 deletions
diff --git a/2300/CH13/EX13.16.12/Ex13_12.sce b/2300/CH13/EX13.16.12/Ex13_12.sce new file mode 100755 index 000000000..1292b397a --- /dev/null +++ b/2300/CH13/EX13.16.12/Ex13_12.sce @@ -0,0 +1,13 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 13 Field-Effect Transistors
+clc
+clear
+ID=5//ID=saturation drain current in terms of mA in an n-channel enhancement mode MOSFET
+VGS=8//VGS=gate-to-source voltage
+VT=4//VT=Threshold voltage
+VGS2=10//VGS2=gate-to-source voltage for which saturation drain current is to be calculated
+//ID=K*(VGS-VT)^2 where K=(IDSS/(Vp^2)) and Vp=pinch-off voltage ,IDSS=drain saturation current for VGS=0 V
+K=ID/((VGS-VT)^2)
+ID1=K*(VGS2-VT)^2//ID1=The saturation drain current for gate-source voltage of 10V i e VGS2
+disp("mA",ID1,"The saturation drain current for gate-source voltage of 10V is =")
|