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+//Exa 3.10.8

+clc;

+clear;

+close;

+//Given data

+A = 1;// in mm^2

+A = A * 10^-6;// in m^2

+N_A = 3 * 10^20;// in atoms/m^3

+q = 1.6 *10^-19;// in C

+V_o = 0.2;// in V

+epsilon_r=16;

+epsilon_o= 8.854*10^-12;// in F/m

+epsilon=epsilon_r*epsilon_o;

+// Part (a)

+V=-10;// in V

+// V_o - V = 1/2*((q * N_A )/epsilon) * W^2

+W = sqrt(((V_o - V) * 2 * epsilon)/(q * N_A));// m

+C_T1 = (epsilon * A)/W;// in F

+disp(W*10^6,"The width of the depletion layer  for an applied reverse voltage of 10V in µm is ");

+// Part (b)

+V=-0.1;// in V

+W = sqrt(((V_o - V) * 2 * epsilon)/(q * N_A));// m

+C_T2 = (epsilon * A)/W;// in F

+disp(W*10^6,"The width of the depletion layer  for an applied reverse voltage of 0.1V in µm is ");

+// Part (c)

+V=0.1;// in V

+W = sqrt(((V_o - V) * 2 * epsilon)/(q * N_A));// m

+disp(W*10^6,"The width of the depletion layer  for an applied for a forward bias of 0.1V in µm is ");

+// Part (d)

+disp(C_T1*10^12,"The space charge capacitance for an applied reverse voltage of 10V  in pF is");

+disp(C_T2*10^12,"The space charge capacitance for an applied reverse voltage of 0.1V  in pF is");

+

+