From b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b Mon Sep 17 00:00:00 2001
From: priyanka
Date: Wed, 24 Jun 2015 15:03:17 +0530
Subject: initial commit / add all books

---
 2129/CH3/EX3.10.8/ex3_10_8.sce | 33 +++++++++++++++++++++++++++++++++
 1 file changed, 33 insertions(+)
 create mode 100755 2129/CH3/EX3.10.8/ex3_10_8.sce

(limited to '2129/CH3/EX3.10.8')

diff --git a/2129/CH3/EX3.10.8/ex3_10_8.sce b/2129/CH3/EX3.10.8/ex3_10_8.sce
new file mode 100755
index 000000000..5ebbf6f80
--- /dev/null
+++ b/2129/CH3/EX3.10.8/ex3_10_8.sce
@@ -0,0 +1,33 @@
+//Exa 3.10.8
+clc;
+clear;
+close;
+//Given data
+A = 1;// in mm^2
+A = A * 10^-6;// in m^2
+N_A = 3 * 10^20;// in atoms/m^3
+q = 1.6 *10^-19;// in C
+V_o = 0.2;// in V
+epsilon_r=16;
+epsilon_o= 8.854*10^-12;// in F/m
+epsilon=epsilon_r*epsilon_o;
+// Part (a)
+V=-10;// in V
+// V_o - V = 1/2*((q * N_A )/epsilon) * W^2
+W = sqrt(((V_o - V) * 2 * epsilon)/(q * N_A));// m
+C_T1 = (epsilon * A)/W;// in F
+disp(W*10^6,"The width of the depletion layer  for an applied reverse voltage of 10V in µm is ");
+// Part (b)
+V=-0.1;// in V
+W = sqrt(((V_o - V) * 2 * epsilon)/(q * N_A));// m
+C_T2 = (epsilon * A)/W;// in F
+disp(W*10^6,"The width of the depletion layer  for an applied reverse voltage of 0.1V in µm is ");
+// Part (c)
+V=0.1;// in V
+W = sqrt(((V_o - V) * 2 * epsilon)/(q * N_A));// m
+disp(W*10^6,"The width of the depletion layer  for an applied for a forward bias of 0.1V in µm is ");
+// Part (d)
+disp(C_T1*10^12,"The space charge capacitance for an applied reverse voltage of 10V  in pF is");
+disp(C_T2*10^12,"The space charge capacitance for an applied reverse voltage of 0.1V  in pF is");
+
+
-- 
cgit