initial commit / add all books

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diff --git a/1979/CH9/EX9.1/Ex9_1.sce b/1979/CH9/EX9.1/Ex9_1.sce
new file mode 100755
index 000000000..bc548009f
--- /dev/null
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@@ -0,0 +1,15 @@
+//chapter-9 page 411 example 9.1

+//==============================================================================

+clc;

+clear;

+

+L=2*10^(-6);//Drift Length of a IMPATT diode in m

+Vd=(10^7)*(10^(-2));//Drift Velocity for Siin m/sec

+

+//CALCULATION

+f=(Vd/(2*L))/10^9;//Operating Frequency in GHz

+

+//OUTPUT

+mprintf('\nOperating Frequency of the IMPATT diode is f=%2.0f GHz',f);

+

+//=========================END OF PROGRAM===============================

diff --git a/1979/CH9/EX9.10/Ex9_10.sce b/1979/CH9/EX9.10/Ex9_10.sce
new file mode 100755
index 000000000..bfacb2d9e
--- /dev/null
+++ b/1979/CH9/EX9.10/Ex9_10.sce
@@ -0,0 +1,19 @@
+//chapter-9 page 413 example 9.10

+//==============================================================================

+clc;

+clear;

+

+//For an IMPATT diode

+L=2*10^(-6);//Drift Length in m

+Vd=10^5;//Carrier Drift Velocity (Assume/Consider) in m/sec

+

+//CALCULATION

+t=(L/Vd)/10^(-9);//Drift Time of the Carrier in nano sec [From f=(1/2t)=(Vd/2L)]

+t1=t*10^(-9);

+f=(1/(2*t1))/10^9;//Operating Frequency of the diode in GHz

+

+//OUTPUT

+mprintf('\nDrift Time of the Carrier is t=%1.2f nano sec \nOperating Frequency of the diode is f=%2.0f GHz',t,f);

+

+//=========================END OF PROGRAM===============================

+

diff --git a/1979/CH9/EX9.11/Ex9_11.sce b/1979/CH9/EX9.11/Ex9_11.sce
new file mode 100755
index 000000000..7f7048a59
--- /dev/null
+++ b/1979/CH9/EX9.11/Ex9_11.sce
@@ -0,0 +1,20 @@
+//chapter-9 page 413 example 9.11

+//==============================================================================

+clc;

+clear;

+

+//For an M-Si-M Basitt diode 

+er=11.8;//Relative dielectric constant of Si 

+e0=8.854*10^(-12);//Permittivity of freespace in F/m

+N=3*10^(21);//Donor Concentration per m^3

+L=6.2*10^(-6);//Si Length in m

+q=1.6*10^(-19);//Charge of an Electron in C

+

+//CALCULATION

+Vbd=((q*N*L^2)/(er*e0));//Breakdown Voltage in V

+Ebd=(Vbd/L)/10^3;//Breakdown Electric Field in kV/m

+

+//OUTPUT

+mprintf('\nBreakdown Voltage is Vbd=%3.1f V \nBreakdown Electric Field is Ebd=%5.0f kV/m',Vbd,Ebd);

+

+//=========================END OF PROGRAM===============================

diff --git a/1979/CH9/EX9.12/Ex9_12.sce b/1979/CH9/EX9.12/Ex9_12.sce
new file mode 100755
index 000000000..d48e4ae82
--- /dev/null
+++ b/1979/CH9/EX9.12/Ex9_12.sce
@@ -0,0 +1,26 @@
+//chapter-9 page 413 example 9.12

+//==============================================================================

+clc;

+clear;

+

+//For an upconverter parametric amplifier

+rQ=8;//figure of merit for a diode nonlinear capacitor

+r=0.2;

+y=8;//ratio of output frequency over signal frequency (f0/fs)

+Td=300;//Diode Temperature in K

+T0=300;//Ambient Temperature in K

+

+//CALCULATION

+X=((rQ)^2)/y;

+G=((y*X)/(1+sqrt(1+X))^2);//Max power gain 

+GdB=10*log10(G);//Maximum Power Gain in dB

+F=(1+((2*Td/T0)*((1/rQ)+(1/rQ)^2)));//Noise Figure 

+FdB=10*log10(F);//Noise Figure in dB

+BW=2*r*sqrt(y);//Bandwidth

+

+//OUTPUT

+mprintf('\nMaximum Power Gain is GdB=%1.2f dB\nNoise Figure is FdB=%1.2f dB \nBandWidth is BW=%1.2f',GdB,FdB,BW);

+

+//=========================END OF PROGRAM===============================

+

+ 

diff --git a/1979/CH9/EX9.13/Ex9_13.sce b/1979/CH9/EX9.13/Ex9_13.sce
new file mode 100755
index 000000000..76fdfb76d
--- /dev/null
+++ b/1979/CH9/EX9.13/Ex9_13.sce
@@ -0,0 +1,37 @@
+//chapter-9 page 414 example 9.13

+//==============================================================================

+clc;

+clear;

+

+//For a negative resistance parametric amplifier

+fs=2*10^9;//Signal Frequency in Hz

+fp=12*10^9;//pump Frequency in Hz

+fi=10*10^9;//idler Frequency in Hz

+fd=5*10^9;//Frequency in Hz

+Ri=1000;//o/p resistance of idler generator in ohms

+Rg=1000;//o/p resistance of signal generator in ohms

+RTs=1000;//total series resistance at fs in ohms

+RTi=1000;//total series resistance at fi in ohms

+r=0.35;

+rQ=10;//figure of merit

+Td=300;//Avg Diode Temperature in K

+T0=300;//Ambient Temperature in K

+C=0.01*10^(-12);//Capacitance in F

+

+//CALCULATION

+ws=2*(%pi)*fs;

+wi=2*(%pi)*fi;

+R=((r^2)/(ws*wi*RTi*C^2));//Equivalent noise resistance in ohms

+a=(R/RTs);

+G=((4*fi*a*Rg*Ri)/(fs*RTs*RTi*(1-a)^2));//Gain

+GdB=10*log10(G);//Gain in dB

+F=(1+((2*Td/T0)*((1/rQ)+(1/rQ)^2)));//Noise Figure 

+FdB=10*log10(F);//Noise Figure in dB

+BW=((r/2)*(sqrt(fd/(fs*G))));

+

+//OUTPUT

+mprintf('\nEquivalent noise resistance is R=%4.1f ohms\nGain is GdB=%2.1f dB\nNoise Figure is FdB=%1.2f dB \nBandWidth is BW=%1.3f',R,GdB,FdB,BW);

+

+//=========================END OF PROGRAM===============================

+

+//Note: Check the Bandwidth answer is once It should be 0.027

diff --git a/1979/CH9/EX9.2/Ex9_2.sce b/1979/CH9/EX9.2/Ex9_2.sce
new file mode 100755
index 000000000..393603fad
--- /dev/null
+++ b/1979/CH9/EX9.2/Ex9_2.sce
@@ -0,0 +1,17 @@
+//chapter-9 page 411 example 9.2

+//==============================================================================

+clc;

+clear;

+

+L=75*10^(-6);//Device Length in m

+V=25;//Voltage Pulse Amplified in V

+f=10*10^9;//Operating Frequency in Hz

+

+//CALCULATION

+Eth=(V/L)/10^5;//Threshold Electric Field in kV/cm

+

+//OUTPUT

+mprintf('\nThreshold Electric Field is Eth=%1.2f kV/cm',Eth);

+

+//=========================END OF PROGRAM===============================

+

diff --git a/1979/CH9/EX9.3/Ex9_3.sce b/1979/CH9/EX9.3/Ex9_3.sce
new file mode 100755
index 000000000..3cdb1e290
--- /dev/null
+++ b/1979/CH9/EX9.3/Ex9_3.sce
@@ -0,0 +1,23 @@
+//chapter-9 page 411 example 9.3

+//==============================================================================

+clc;

+clear;

+

+fs=2*10^9;//Signal Frequency in Hz

+fp=12*10^9//Pump Frequency in Hz

+Ri=16;//O/P resistance of signal generator in ohms

+Rs=1000;//On types resistance of signal generator in ohms

+

+//CALCULATION

+P=10*log10((fp-fs)/fs);//Power gain in dB

+Pusb=10*log10((fp+fs)/fs);//Power gain as USB converter in dB

+

+//OUTPUT

+mprintf('\nPower gain is P=%1.2f dB \nPower gain as USB converter is Pusb=%1.2f dB',P,Pusb);

+

+//=========================END OF PROGRAM===============================

+

+

+//Note: Answer given in textbook is wrong Check it once..

+//Correct answers are Power gain is P=6.99 dB 

+//                    Power gain as USB converter is Pusb=8.45 dB 

diff --git a/1979/CH9/EX9.4/Ex9_4.sce b/1979/CH9/EX9.4/Ex9_4.sce
new file mode 100755
index 000000000..496733d30
--- /dev/null
+++ b/1979/CH9/EX9.4/Ex9_4.sce
@@ -0,0 +1,20 @@
+//chapter-9 page 411 example 9.4

+//==============================================================================

+clc;

+clear;

+

+es=12.5;//Relative Dielectric constant

+e0=8.854*10^(-12);//Permittivity in Free Space in F/m

+N=3.2*10^22;//Donor Concentration per m^3

+L=8*10^(-6);//Length of Si BARITT diode in m

+q=1.6*10^(-19);//Charge of an Electron in C

+

+//CALCULATION

+Vc=((q*N*L^2)/(2*es*e0))/10^3;//Critical Voltage in kV

+Vbd=2*Vc;//Breakdown Voltage in kV

+Ebd=(Vbd/L)/100;//Breakdown Electric Field in kV/cm

+

+//OUTPUT

+mprintf('\nCritical Voltage is Vc=%1.2f kV \nBreakdown Voltage is Vbd=%1.2f kV \nBreakdown Electric Field is Ebd=%6.2f kV/cm',Vc,Vbd,Ebd);

+

+//=========================END OF PROGRAM===============================

diff --git a/1979/CH9/EX9.5/Ex9_5.sce b/1979/CH9/EX9.5/Ex9_5.sce
new file mode 100755
index 000000000..a63317867
--- /dev/null
+++ b/1979/CH9/EX9.5/Ex9_5.sce
@@ -0,0 +1,16 @@
+//chapter-9 page 412 example 9.5

+//==============================================================================

+clc;

+clear;

+

+J=33000;//Current density in A/sqcm

+Na=2.5*10^16;//Doping Concentation in TRAPATT diode per cubic cm

+q=1.6*10^(-19);//Charge of an Electron in C

+

+//CALCULATION

+Vz=(J/(q*Na))/10^5;//Avalanche Zone Velocity in Km/sec

+

+//OUTPUT

+mprintf('\nAvalanche Zone Velocity is Vz=%2.1f Km/sec',Vz);

+

+//=========================END OF PROGRAM===============================

diff --git a/1979/CH9/EX9.6/Ex9_6.sce b/1979/CH9/EX9.6/Ex9_6.sce
new file mode 100755
index 000000000..663f23577
--- /dev/null
+++ b/1979/CH9/EX9.6/Ex9_6.sce
@@ -0,0 +1,19 @@
+//chapter-9 page 412 example 9.6

+//==============================================================================

+clc;

+clear;

+

+//For an IMPATT diode power amplifier

+Rd=25;//Negative Resistance in ohms

+Rl=50;//Load Resistance in ohms

+

+//CALCULATION

+x=abs(Rd);

+G=((-x-Rl)/(-x+Rl))^2;//Power gain of an IMPATT diode

+

+//OUTPUT

+mprintf('\nPower gain of an IMPATT diode is G=%1.0f',G);

+

+//=========================END OF PROGRAM===============================

+

+

diff --git a/1979/CH9/EX9.7/Ex9_7.sce b/1979/CH9/EX9.7/Ex9_7.sce
new file mode 100755
index 000000000..fd7d34a47
--- /dev/null
+++ b/1979/CH9/EX9.7/Ex9_7.sce
@@ -0,0 +1,17 @@
+//chapter-9 page 412 example 9.7

+//==============================================================================

+clc;

+clear;

+

+//For a Gunn Diode

+L=5*10^(-4);//Drift Length in cm

+Vg=3300;//Voltage gradient in V/cm [Vg>3.3 kV/cm]

+ 

+//CALCULATION

+Vmin=Vg*L;//Minimum Voltage needed to initiate Gunn effect in volts

+

+//OUTPUT

+mprintf('\nMinimum Voltage needed to initiate Gunn effect is Vmin=%1.2f volts',Vmin);

+

+//=========================END OF PROGRAM===============================

+

diff --git a/1979/CH9/EX9.8/Ex9_8.sce b/1979/CH9/EX9.8/Ex9_8.sce
new file mode 100755
index 000000000..b975d7cd3
--- /dev/null
+++ b/1979/CH9/EX9.8/Ex9_8.sce
@@ -0,0 +1,19 @@
+//chapter-9 page 412 example 9.8

+//==============================================================================

+clc;

+clear;

+

+//For a Gunn Diode

+L=20*10^(-4);//Active Length in cm

+Vd=2*10^7;//Drift Velocity of Electrons in cm/sec

+Ec=3.3*10^3;//Criticl Field for GaAs in V/cm

+

+//CALCULATION

+fn=(Vd/L)/10^9;//Natural(Rational) Frequency in GHz

+Vc=L*Ec;//Critical Voltage of the diode in volts

+

+//OUTPUT

+mprintf('\nNatural(Rational) Frequency is fn=%2.0f GHz \nCritical Voltage of the diode is Vc=%1.1f volts',fn,Vc);

+

+//=========================END OF PROGRAM===============================

+ 

diff --git a/1979/CH9/EX9.9/Ex9_9.sce b/1979/CH9/EX9.9/Ex9_9.sce
new file mode 100755
index 000000000..13b06996a
--- /dev/null
+++ b/1979/CH9/EX9.9/Ex9_9.sce
@@ -0,0 +1,22 @@
+//chapter-9 page 412 example 9.9

+//==============================================================================

+clc;

+clear;

+

+//For an IMPATT diode

+Lp=0.5*10^(-9);//Inductance in Henry

+Cj=0.5*10^(-12);//Capacitance in Farad

+Ip=0.8;//RF peak current in A

+Rl=2;//Load Resistance in ohms

+Vbd=100;//Breakdown Voltage in V

+Ib=0.1;//dc Bias current in A

+

+//CALCULATION

+f=(1/(2*(%pi)*sqrt(Lp*Cj)))/10^9;//Resonant Frequency in GHz

+n=((Rl*Ip^2)/(2*Vbd*Ib))*100;//Efficiency in Percentage

+

+//OUTPUT

+mprintf('\nResonant Frequency is f=%2.0f GHz \nEfficiency is n=%1.1f percentage',f,n);

+

+//=========================END OF PROGRAM===============================

+