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| author | priyanka | 2015-06-24 15:03:17 +0530 |
|---|---|---|
| committer | priyanka | 2015-06-24 15:03:17 +0530 |
| commit | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (patch) | |
| tree | ab291cffc65280e58ac82470ba63fbcca7805165 /181/CH7/EX7.56/example7_56.sce | |
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| -rwxr-xr-x | 181/CH7/EX7.56/example7_56.sce | 32 |
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diff --git a/181/CH7/EX7.56/example7_56.sce b/181/CH7/EX7.56/example7_56.sce new file mode 100755 index 000000000..fc12a19db --- /dev/null +++ b/181/CH7/EX7.56/example7_56.sce @@ -0,0 +1,32 @@ +// Verify FET operation in pinch-off region
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 7-56 in page 358
+
+clear; clc; close;
+
+// Given data
+Vp=-2; // Pinch off voltage in V
+Idss=4*10^-3; // Drain-source current in mA
+Rd=910; // Drain resistance in ohms
+Rs=3*10^3; // Source resistance in K-ohms
+R1=12*10^6; // R1 value in M-ohms
+R2=8.57*10^6; // R2 value in M-ohms
+Vdd=24; // Drain voltage in V
+
+// Calculation
+Vgg = Vdd*R2/(R1+R2);
+Id1=(73+sqrt(73^2-(4*9*144)))/(2*9);
+Id2=(73-sqrt(73^2-(4*9*144)))/(2*9);
+printf("Id = %0.2e A or %0.2e A\n",Id1,Id2);
+printf("A value of 3.39 mA is selected\n");
+Vgsq=10-(3.39*10^-3*3*10^3);
+Vdsq=Vdd-(3.39*10^-3*3.91*10^3);
+Vdgq=Vdsq-Vgsq;
+printf("Vgsq = %0.2fV\nVdsq = %0.2fV\nVdgq = %0.3f V\n",Vgsq,Vdsq,Vdgq);
+printf("Vdgq>Vd.Hence the FET is in the pinch off region");
+
+// Result
+// FET operates in the pinch off region
\ No newline at end of file |