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author | priyanka | 2015-06-24 15:03:17 +0530 |
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committer | priyanka | 2015-06-24 15:03:17 +0530 |
commit | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (patch) | |
tree | ab291cffc65280e58ac82470ba63fbcca7805165 /181/CH2/EX2.7 | |
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initial commit / add all books
Diffstat (limited to '181/CH2/EX2.7')
-rwxr-xr-x | 181/CH2/EX2.7/example2_7.sce | 21 | ||||
-rwxr-xr-x | 181/CH2/EX2.7/example2_7.txt | 1 |
2 files changed, 22 insertions, 0 deletions
diff --git a/181/CH2/EX2.7/example2_7.sce b/181/CH2/EX2.7/example2_7.sce new file mode 100755 index 000000000..f9b82a4f7 --- /dev/null +++ b/181/CH2/EX2.7/example2_7.sce @@ -0,0 +1,21 @@ +// Calculate barrier capacitance of Ge
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 2-7 in page 87
+
+clear; clc; close;
+
+// Given data
+epsln=1.41*10^-12; // Dielectric constant
+A=0.0225; // Junction area in cm^2
+W=2*10^-4; // Space-charge thickness in cm
+
+// Calculation
+C_T=epsln*(A/W);
+
+printf("Barrier capacitance = %0.2e F",C_T);
+
+// Result
+// Barrier capacitance = 159.3 pF
\ No newline at end of file diff --git a/181/CH2/EX2.7/example2_7.txt b/181/CH2/EX2.7/example2_7.txt new file mode 100755 index 000000000..af698f523 --- /dev/null +++ b/181/CH2/EX2.7/example2_7.txt @@ -0,0 +1 @@ +Barrier capacitance = 159.3 pF
\ No newline at end of file |