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| author | priyanka | 2015-06-24 15:03:17 +0530 |
|---|---|---|
| committer | priyanka | 2015-06-24 15:03:17 +0530 |
| commit | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (patch) | |
| tree | ab291cffc65280e58ac82470ba63fbcca7805165 /181/CH1/EX1.9/example1_9.sce | |
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| -rwxr-xr-x | 181/CH1/EX1.9/example1_9.sce | 22 |
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diff --git a/181/CH1/EX1.9/example1_9.sce b/181/CH1/EX1.9/example1_9.sce new file mode 100755 index 000000000..4e4495cee --- /dev/null +++ b/181/CH1/EX1.9/example1_9.sce @@ -0,0 +1,22 @@ +// Find Fermi level at room temperature
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 1-9 in page 34
+
+clear; clc; close;
+
+// Data given
+k=1; // Assumed constant
+m_e=2*k; // Effective mass of an electron in Kg
+m_h=k; // Effective mass of only heavy hole in Kg
+k_bT=0.026; // Expressed in eV at room temperature
+
+// Calculation
+E_f=(3/4)*0.026*log(m_e/m_h);
+printf("E_f = ((-E_g/2) - %0.3f) eV\n",E_f);
+printf("Thus Fermi level is below center of forbidden gap by 0.014 eV");
+
+// Result
+// Fermi level in the intrinsic semiconductor is ((-E_g/2) - 0.014) eV
\ No newline at end of file |