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| author | priyanka | 2015-06-24 15:03:17 +0530 |
|---|---|---|
| committer | priyanka | 2015-06-24 15:03:17 +0530 |
| commit | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (patch) | |
| tree | ab291cffc65280e58ac82470ba63fbcca7805165 /181/CH1/EX1.23 | |
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initial commit / add all books
Diffstat (limited to '181/CH1/EX1.23')
| -rwxr-xr-x | 181/CH1/EX1.23/example1_23.sce | 22 | ||||
| -rwxr-xr-x | 181/CH1/EX1.23/example1_23.txt | 1 |
2 files changed, 23 insertions, 0 deletions
diff --git a/181/CH1/EX1.23/example1_23.sce b/181/CH1/EX1.23/example1_23.sce new file mode 100755 index 000000000..2249d2dd8 --- /dev/null +++ b/181/CH1/EX1.23/example1_23.sce @@ -0,0 +1,22 @@ +// Percentage of increse in carrier concentration
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 1-23 in page 51
+
+clear; clc; close;
+
+// Data given
+kT=0.026; // Value at T=300K
+T=300; // Room temperature in K
+dT=1/300; // Rate of change of temperature
+E_g=0.785; // Band gap energy in germanium in eV
+
+// Calculation
+dni=((1.5+(E_g/(2*kT)))*dT)*100;
+
+printf("Rise in intrinsic carrier concentration is %0.1f percent/degree",dni);
+
+// Result
+// Percentage rise in intrinsic carrier concentration is 5.5 %/degree
\ No newline at end of file diff --git a/181/CH1/EX1.23/example1_23.txt b/181/CH1/EX1.23/example1_23.txt new file mode 100755 index 000000000..f53772e1a --- /dev/null +++ b/181/CH1/EX1.23/example1_23.txt @@ -0,0 +1 @@ +Rise in intrinsic carrier concentration is 5.5 percent/degree
\ No newline at end of file |