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+// Electron,hole concentration at minimum conductivity

+// Basic Electronics

+// By Debashis De

+// First Edition, 2010

+// Dorling Kindersley Pvt. Ltd. India

+// Example 1-20 in page 49

+

+clear; clc; close;

+

+// Data given

+mu_n=1350; // Mobility of electrons in cm^2/Vs

+mu_p=450; // Movility of holes in cm^2/Vs

+n_i=1.5*10^10; // Intrinsic carrier concentration /cm^3

+

+// Calculation\

+//Minimum conductivity of Si when slightly p-type has been proved in text

+//Thus the electron and hole concentrations are derived as below

+n_0=n_i*sqrt(mu_p/mu_n); 

+p_0=n_i*sqrt(mu_n/mu_p); 

+

+printf("(a)Electron concentration is %0.2e cm^-3\n",n_0);

+printf("(b)Hole concentration is %0.2e cm^-3",p_0);

+

+// Result 

+// (a) Electron concentration is 8.66*10^9 cm^-3

+// (b) Hole concentration is 2.6*10^10 cm^-3
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+ Electron concentration is 8.66e+009 cm^-3

+Hole concentration is 2.60e+010 cm^-3 
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