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author | prashantsinalkar | 2017-10-10 12:27:19 +0530 |
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committer | prashantsinalkar | 2017-10-10 12:27:19 +0530 |
commit | 7f60ea012dd2524dae921a2a35adbf7ef21f2bb6 (patch) | |
tree | dbb9e3ddb5fc829e7c5c7e6be99b2c4ba356132c /147/CH8/EX8.9 | |
parent | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (diff) | |
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initial commit / add all books
Diffstat (limited to '147/CH8/EX8.9')
-rw-r--r-- | 147/CH8/EX8.9/Example8_9.sce | 22 | ||||
-rw-r--r-- | 147/CH8/EX8.9/Result8_9.txt | 5 |
2 files changed, 27 insertions, 0 deletions
diff --git a/147/CH8/EX8.9/Example8_9.sce b/147/CH8/EX8.9/Example8_9.sce new file mode 100644 index 000000000..fb3ac6429 --- /dev/null +++ b/147/CH8/EX8.9/Example8_9.sce @@ -0,0 +1,22 @@ +close();
+clear;
+clc;
+B = 80;
+Vceq = 8; //V
+Rc = 3000; //ohm
+Vcc = 15; //V
+Vbeq = 0.7; //for Si transistor
+
+//(a) by KVL around collector circuit
+Icq = (Vcc-Vceq)/Rc; //A
+mprintf("(a) Icq = %0.3f mA\n\n",Icq*1000);
+
+//(b)if leakage current is neglected
+Ibq = Icq/B; //A
+Rb = (Vcc-Vbeq)/Ibq; //ohm
+mprintf("(b) Rb for Si device = %0.1f k ohm\n\n",Rb/1000);
+
+//(c)
+Vbeq = 0.3; //for Ge transisor
+Rb = (Vcc-Vbeq)/Ibq;
+mprintf("(c) Rb for Ge device = %0.1f k ohm",Rb/1000);
diff --git a/147/CH8/EX8.9/Result8_9.txt b/147/CH8/EX8.9/Result8_9.txt new file mode 100644 index 000000000..46fe0d76a --- /dev/null +++ b/147/CH8/EX8.9/Result8_9.txt @@ -0,0 +1,5 @@ +(a) Icq = 2.333 mA
+
+(b) Rb for Si device = 490.3 k ohm
+
+(c) Rb for Ge device = 504.0 k ohm
\ No newline at end of file |