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diff --git a/147/CH8/EX8.9/Example8_9.sce b/147/CH8/EX8.9/Example8_9.sce
new file mode 100644
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+++ b/147/CH8/EX8.9/Example8_9.sce
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+close();
+clear;
+clc;
+B = 80;
+Vceq = 8; //V
+Rc = 3000; //ohm
+Vcc = 15; //V
+Vbeq = 0.7; //for Si transistor
+
+//(a) by KVL around collector circuit
+Icq = (Vcc-Vceq)/Rc; //A
+mprintf("(a) Icq = %0.3f mA\n\n",Icq*1000);
+
+//(b)if leakage current is neglected
+Ibq = Icq/B; //A
+Rb = (Vcc-Vbeq)/Ibq; //ohm
+mprintf("(b) Rb for Si device = %0.1f k ohm\n\n",Rb/1000);
+
+//(c)
+Vbeq = 0.3; //for Ge transisor
+Rb = (Vcc-Vbeq)/Ibq;
+mprintf("(c) Rb for Ge device = %0.1f k ohm",Rb/1000);