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author | kinitrupti | 2017-05-12 18:40:35 +0530 |
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committer | kinitrupti | 2017-05-12 18:40:35 +0530 |
commit | 64d949698432e05f2a372d9edc859c5b9df1f438 (patch) | |
tree | 012fd5b4ac9102cdcf5bc56305e49d6714fa5951 /sample_notebooks/ajinkyakhair | |
parent | 9c6ab8cbf3e1a84c780386abf4852d84cdd32d56 (diff) | |
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Revised list of TBCs
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-rwxr-xr-x | sample_notebooks/ajinkyakhair/ajinkyakhair_version_backup/Untitled3.ipynb (renamed from sample_notebooks/ajinkyakhair/Untitled3.ipynb) | 0 | ||||
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4 files changed, 410 insertions, 410 deletions
diff --git a/sample_notebooks/ajinkyakhair/Untitled3.ipynb b/sample_notebooks/ajinkyakhair/ajinkyakhair_version_backup/Untitled3.ipynb index c9360e01..c9360e01 100755 --- a/sample_notebooks/ajinkyakhair/Untitled3.ipynb +++ b/sample_notebooks/ajinkyakhair/ajinkyakhair_version_backup/Untitled3.ipynb diff --git a/sample_notebooks/ajinkyakhair/ajinkyakhair_version_backup/chapter2.ipynb b/sample_notebooks/ajinkyakhair/ajinkyakhair_version_backup/chapter2.ipynb new file mode 100755 index 00000000..8b221e49 --- /dev/null +++ b/sample_notebooks/ajinkyakhair/ajinkyakhair_version_backup/chapter2.ipynb @@ -0,0 +1,240 @@ +{ + "metadata": { + "celltoolbar": "Raw Cell Format", + "name": "", + "signature": "sha256:4fe36e3e0da1a77ee9793bbcdad9ed8d44455b05327e70b42ad389ca8fb3e239" + }, + "nbformat": 3, + "nbformat_minor": 0, + "worksheets": [ + { + "cells": [ + { + "cell_type": "heading", + "level": 1, + "metadata": {}, + "source": [ + "Chapter 2: Semiconductor Physics" + ] + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 2.21.1,Page number 2-47" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "import math\n", + "\n", + "#Given Data:\n", + "\n", + "ro=1.72*10**-8 #resistivity of Cu\n", + "s=1/ro #conductivity of Cu\n", + "n=10.41*10**28 #no of electron per unit volume\n", + "e=1.6*10**-19 #charge on electron\n", + "\n", + "u=s/(n*e)\n", + "print\"mobility of electron in Cu =\",round(u,4),\"m**2/volt-sec\"" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "mobility of electron in Cu = 0.0035 m**2/volt-sec\n" + ] + } + ], + "prompt_number": 2 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 2.21.2,Page number 2-47" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "import math\n", + "\n", + "#Given Data:\n", + "\n", + "m=63.5 #atomic weight\n", + "u=43.3 #mobility of electron\n", + "e=1.6*10**-19 #charge on electron\n", + "N=6.02*10**23 #Avogadro's number\n", + "d=8.96 #density\n", + "\n", + "Ad=N*d/m #Atomic density\n", + "n=1*Ad\n", + "\n", + "ro=1/(n*e*u)\n", + "\n", + "print\"Resistivity of Cu =\",\"{0:.3e}\".format(ro),\"ohm-cm\"" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "Resistivity of Cu = 1.699e-06 ohm-cm\n" + ] + } + ], + "prompt_number": 4 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 2.21.3,Page number 2-47" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "import math\n", + "\n", + "#Given Data:\n", + "\n", + "e=1.6*10**-19 #charge on electron\n", + "ne=2.5*10**19 #density of carriers\n", + "nh=ne #for intrinsic semiconductor\n", + "ue=0.39 #mobility of electron\n", + "uh=0.19 #mobility of hole\n", + "\n", + "s=ne*e*ue+nh*e*uh #conductivity of Ge\n", + "ro=1/s #resistivity of Ge\n", + "\n", + "print\"Resistivity of Ge =\",round(ro,4),\"ohm-m\"" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "Resistivity of Ge = 0.431 ohm-m\n" + ] + } + ], + "prompt_number": 6 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 2.21.6,Page number 2-49" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "import math\n", + "\n", + "#Given Data:\n", + "\n", + "c=5*10**28 #concentration of Si atoms\n", + "e=1.6*10**-19 #charge on electron\n", + "u=0.048 #mobility of hole\n", + "s=4.4*10**-4 #conductivity of Si\n", + "\n", + "#since millionth Si atom is replaced by an indium atom\n", + "\n", + "n=c*10**-6\n", + "sp=u*e*n #conductivity of resultant\n", + "\n", + "print\"conductivity =\",sp,\"mho/m\"" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "conductivity = 384.0 mho/m\n" + ] + } + ], + "prompt_number": 10 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 2.21.7,Page number 2-49" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "import math\n", + "\n", + "#Given Data:\n", + "\n", + "m=28.1 #atomic weight of Si\n", + "e=1.6*10**-19 #charge on electron\n", + "N=6.02*10**26 #Avogadro's number\n", + "d=2.4*10**3 #density of Si\n", + "p=0.25 #resistivity\n", + "\n", + "#no. of Si atom/m**3\n", + "Ad=N*d/m #Atomic density\n", + "\n", + "#impurity level is 0.01 ppm i.e. 1 atom in every 10**8 atoms of Si\n", + "n=Ad/10**8 #no of impurity atoms\n", + "\n", + "#since each impurity produce 1 hole\n", + "nh=n\n", + "print\"1) hole concentration =\",\"{0:.3e}\".format(n),\"holes/m**3\"\n", + "up=1/(e*p*nh)\n", + "print\"2) mobility =\",round(up,4),\"m**2/volt.sec\"\n" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "1) hole concentration = 5.142e+20 holes/m**3\n", + "2) mobility = 0.0486 m**2/volt.sec\n" + ] + } + ], + "prompt_number": 12 + }, + { + "cell_type": "code", + "collapsed": false, + "input": [], + "language": "python", + "metadata": {}, + "outputs": [] + } + ], + "metadata": {} + } + ] +}
\ No newline at end of file diff --git a/sample_notebooks/ajinkyakhair/chapter2.ipynb b/sample_notebooks/ajinkyakhair/chapter2.ipynb index 8b221e49..5bd122ad 100755..100644 --- a/sample_notebooks/ajinkyakhair/chapter2.ipynb +++ b/sample_notebooks/ajinkyakhair/chapter2.ipynb @@ -1,8 +1,7 @@ { "metadata": { - "celltoolbar": "Raw Cell Format", "name": "", - "signature": "sha256:4fe36e3e0da1a77ee9793bbcdad9ed8d44455b05327e70b42ad389ca8fb3e239" + "signature": "sha256:74a00fabf3de3a229499fd336c46d9a546ea42ad7cb4fbe98a92a6ea72f21fa8" }, "nbformat": 3, "nbformat_minor": 0, @@ -14,7 +13,7 @@ "level": 1, "metadata": {}, "source": [ - "Chapter 2: Semiconductor Physics" + "Chapter 2: Bonding in Solids" ] }, { @@ -22,7 +21,7 @@ "level": 2, "metadata": {}, "source": [ - "Example 2.21.1,Page number 2-47" + "Example 2.1,Page number 62" ] }, { @@ -31,15 +30,14 @@ "input": [ "import math\n", "\n", - "#Given Data:\n", - "\n", - "ro=1.72*10**-8 #resistivity of Cu\n", - "s=1/ro #conductivity of Cu\n", - "n=10.41*10**28 #no of electron per unit volume\n", - "e=1.6*10**-19 #charge on electron\n", - "\n", - "u=s/(n*e)\n", - "print\"mobility of electron in Cu =\",round(u,4),\"m**2/volt-sec\"" + "#Given Data\n", + "epsilon_0 = 8.854*10**-12; # Absolute electrical permittivity of free space, F/m\n", + "e = 1.6*10**-19; # Energy equivalent of 1 eV, eV/J\n", + "r = 3.147*10**-10; # Nearest neighbour distance for KCl, m\n", + "n = 9.1; # Repulsive exponent of KCl\n", + "A = 1.748; # Madelung constant for lattice binding energy\n", + "E = A*e**2/(4*math.pi*epsilon_0*r)*(n-1)/n/e; # Binding energy of KCl, eV\n", + "print\"The binding energy of KCl = \",round(E,4),\"eV\";\n" ], "language": "python", "metadata": {}, @@ -48,18 +46,18 @@ "output_type": "stream", "stream": "stdout", "text": [ - "mobility of electron in Cu = 0.0035 m**2/volt-sec\n" + "The binding energy of KCl = 7.10982502818 eV\n" ] } ], - "prompt_number": 2 + "prompt_number": 5 }, { "cell_type": "heading", "level": 2, "metadata": {}, "source": [ - "Example 2.21.2,Page number 2-47" + "Example 2.2,Page number 62" ] }, { @@ -68,20 +66,56 @@ "input": [ "import math\n", "\n", - "#Given Data:\n", - "\n", - "m=63.5 #atomic weight\n", - "u=43.3 #mobility of electron\n", - "e=1.6*10**-19 #charge on electron\n", - "N=6.02*10**23 #Avogadro's number\n", - "d=8.96 #density\n", + "#Given Data\n", "\n", - "Ad=N*d/m #Atomic density\n", - "n=1*Ad\n", + "epsilon_0 = 8.854*10**-12; # Absolute electrical permittivity of free space, F/m\n", + "N = 6.023*10**23; # Avogadro's number\n", + "e = 1.6*10**-19; # Energy equivalent of 1 eV, eV/J\n", + "a0 = 5.63*10**-10; # Lattice parameter of NaCl, m\n", + "r0 = a0/2; # Nearest neighbour distance for NaCl, m\n", + "n = 8.4; # Repulsive exponent of NaCl\n", + "A = 1.748; # Madelung constant for lattice binding energy\n", + "E = A*e**2/(4*pi*epsilon_0*r0)*(n-1)/n/e; # Binding energy of NaCl, eV\n", + "print\"The binding energy of NaCl = \",round(E*N*e/(4.186*1000),4),\"kcal/mol\" ;\n" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "The binding energy of NaCl = 181.1005 kcal/mol\n" + ] + } + ], + "prompt_number": 7 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 2.3,Page number 62" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "import math\n", "\n", - "ro=1/(n*e*u)\n", + "#Given Data\n", "\n", - "print\"Resistivity of Cu =\",\"{0:.3e}\".format(ro),\"ohm-cm\"" + "epsilon_0 = 8.854*10**-12; # Absolute electrical permittivity of free space, F/m\n", + "N = 6.023*10**23; # Avogadro's number\n", + "e = 1.6*10**-19; # Energy equivalent of 1 eV, eV/J\n", + "E = 162.9*10**3; # Binding energy of KCl, cal/mol\n", + "n = 8.6; # Repulsive exponent of KCl\n", + "A = 1.747; # Madelung constant for lattice binding energy\n", + "# As lattice binding energy, E = A*e**2/(4*%pi*epsilon_0*r0)*(n-1)/n, solving for r0\n", + "r0 = A*N*e**2/(4*pi*epsilon_0*E*4.186)*(n-1)/n; # Nearest neighbour distance of KCl, m\n", + "print\"The nearest neighbour distance of KCl = \",round(r0*10**10,4),\"angstorm\";\n" ], "language": "python", "metadata": {}, @@ -90,18 +124,18 @@ "output_type": "stream", "stream": "stdout", "text": [ - "Resistivity of Cu = 1.699e-06 ohm-cm\n" + "The nearest neighbour distance of KCl = 3.1376 angstorm\n" ] } ], - "prompt_number": 4 + "prompt_number": 12 }, { "cell_type": "heading", "level": 2, "metadata": {}, "source": [ - "Example 2.21.3,Page number 2-47" + "Example 2.4,Page number 63" ] }, { @@ -110,18 +144,18 @@ "input": [ "import math\n", "\n", - "#Given Data:\n", + "#Given Data\n", "\n", - "e=1.6*10**-19 #charge on electron\n", - "ne=2.5*10**19 #density of carriers\n", - "nh=ne #for intrinsic semiconductor\n", - "ue=0.39 #mobility of electron\n", - "uh=0.19 #mobility of hole\n", + "epsilon_0 = 8.854*10**-12; # Absolute electrical permittivity of free space, F/m\n", + "N = 6.023*10**23; # Avogadro's number\n", + "e = 1.6*10**-19; # Energy equivalent of 1 eV, eV/J\n", + "E = 152*10**3; # Binding energy of CsCl, cal/mol\n", + "n = 10.6; # Repulsive exponent of CsCl\n", + "A = 1.763; # Madelung constant for lattice binding energy\n", "\n", - "s=ne*e*ue+nh*e*uh #conductivity of Ge\n", - "ro=1/s #resistivity of Ge\n", - "\n", - "print\"Resistivity of Ge =\",round(ro,4),\"ohm-m\"" + "# As lattice binding energy, E = A*e**2/(4*pi*epsilon_0*r0)*(n-1)/n, solving for r0\n", + "r0 = A*N*e**2/(4*pi*epsilon_0*E*4.186)*(n-1)/n; # Nearest neighbour distance of CsCl, m\n", + "print\"The nearest neighbour distance of CsCl = \",round(r0*10**10,4),\"angstrom\";\n" ], "language": "python", "metadata": {}, @@ -130,18 +164,18 @@ "output_type": "stream", "stream": "stdout", "text": [ - "Resistivity of Ge = 0.431 ohm-m\n" + "The nearest neighbour distance of CsCl = 3.4776 angstrom\n" ] } ], - "prompt_number": 6 + "prompt_number": 13 }, { "cell_type": "heading", "level": 2, "metadata": {}, "source": [ - "Example 2.21.6,Page number 2-49" + "Example 2.5,Page number 63" ] }, { @@ -150,19 +184,57 @@ "input": [ "import math\n", "\n", - "#Given Data:\n", + "#Given Data\n", "\n", - "c=5*10**28 #concentration of Si atoms\n", - "e=1.6*10**-19 #charge on electron\n", - "u=0.048 #mobility of hole\n", - "s=4.4*10**-4 #conductivity of Si\n", + "epsilon_0 = 8.854*10**-12; # Absolute electrical permittivity of free space, F/m\n", + "N = 6.023*10**23; # Avogadro's number\n", + "e = 1.6*10**-19; # Energy equivalent of 1 eV, eV/J\n", + "r0 = 6.46*10**-10; # Nearest neighbour distance of NaI\n", + "E = 157.1*10**3; # Binding energy of NaI, cal/mol\n", + "A = 1.747; # Madelung constant for lattice binding energy\n", "\n", - "#since millionth Si atom is replaced by an indium atom\n", + "# As lattice binding energy, E = -A*e**2/(4*pi*epsilon_0*r0)*(n-1)/n, solving for n\n", + "n = 1/(1+(4.186*E*4*pi*epsilon_0*r0)/(N*A*e**2)); # Repulsive exponent of NaI\n", + "print\"\\nThe repulsive exponent of NaI = \",round(n,4);" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "\n", + "The repulsive exponent of NaI = 0.363\n" + ] + } + ], + "prompt_number": 15 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 2.6,Page number 63" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "import math\n", "\n", - "n=c*10**-6\n", - "sp=u*e*n #conductivity of resultant\n", + "#Given Data\n", "\n", - "print\"conductivity =\",sp,\"mho/m\"" + "e = 1.6*10**-19; # Energy equivalent of 1 eV, eV/J\n", + "a0 = 2.8158*10**-10; # Nearest neighbour distance of solid\n", + "A = 1.747; # Madelung constant for lattice binding energy\n", + "n = 8.6; # The repulsive exponent of solid\n", + "c = 2; # Structural factor for rocksalt\n", + "# As n = 1 + (9*c*a0**4)/(K0*e**2*A), solving for K0\n", + "K0 = 9*c*a0**4/((n-1)*e**2*A); # Compressibility of solid, metre square per newton\n", + "print\"The compressibility of the solid = \", \"{0:.3e}\".format(K0),\"metre square per newton\";" ], "language": "python", "metadata": {}, @@ -171,18 +243,18 @@ "output_type": "stream", "stream": "stdout", "text": [ - "conductivity = 384.0 mho/m\n" + "The compressibility of the solid = 3.329e-01 metre square per newton\n" ] } ], - "prompt_number": 10 + "prompt_number": 18 }, { "cell_type": "heading", "level": 2, "metadata": {}, "source": [ - "Example 2.21.7,Page number 2-49" + "Example 2.7,Page number 69" ] }, { @@ -191,25 +263,50 @@ "input": [ "import math\n", "\n", - "#Given Data:\n", + "#Given Data\n", "\n", - "m=28.1 #atomic weight of Si\n", - "e=1.6*10**-19 #charge on electron\n", - "N=6.02*10**26 #Avogadro's number\n", - "d=2.4*10**3 #density of Si\n", - "p=0.25 #resistivity\n", + "chi_diff = 1; # Electronegativity difference between the constituent of elements of solid\n", + "percent_ion = 100*(1-math.e**(-(0.25*chi_diff**2))); # Percentage ionic character present in solid given by Pauling\n", + "print\"The percentage ionic character present in solid = \",round(percent_ion,2),\"percent \";\n" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "The percentage ionic character present in solid = 22.12 percent \n" + ] + } + ], + "prompt_number": 20 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 2.8,Page number 69" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "import math\n", "\n", - "#no. of Si atom/m**3\n", - "Ad=N*d/m #Atomic density\n", + "#Given Data\n", "\n", - "#impurity level is 0.01 ppm i.e. 1 atom in every 10**8 atoms of Si\n", - "n=Ad/10**8 #no of impurity atoms\n", + "Eh_GaAs = 4.3; # Homopolar gap of GaAs compound, eV\n", + "C_GaAs = 2.90; # Ionic gap of GaAs compound, eV\n", + "Eh_CdTe = 3.08; # Homopolar gap of CdTe compound, eV\n", + "C_CdTe = 4.90; # Ionic gap of CdTe compound, eV\n", "\n", - "#since each impurity produce 1 hole\n", - "nh=n\n", - "print\"1) hole concentration =\",\"{0:.3e}\".format(n),\"holes/m**3\"\n", - "up=1/(e*p*nh)\n", - "print\"2) mobility =\",round(up,4),\"m**2/volt.sec\"\n" + "fi_GaAs = C_GaAs**2/(Eh_GaAs**2 + C_GaAs**2);\n", + "fi_CdTe = C_CdTe**2/(Eh_CdTe**2 + C_CdTe**2);\n", + "print\"The fractional ionicity of GaAs = \",round(fi_GaAs,4);\n", + "print\"The fractional ionicity of CdTe = \",round(fi_CdTe,4);\n" ], "language": "python", "metadata": {}, @@ -218,12 +315,12 @@ "output_type": "stream", "stream": "stdout", "text": [ - "1) hole concentration = 5.142e+20 holes/m**3\n", - "2) mobility = 0.0486 m**2/volt.sec\n" + "The fractional ionicity of GaAs = 0.3126\n", + "The fractional ionicity of CdTe = 0.7168\n" ] } ], - "prompt_number": 12 + "prompt_number": 3 }, { "cell_type": "code", diff --git a/sample_notebooks/ajinkyakhair/chapter2_8f8MyfH.ipynb b/sample_notebooks/ajinkyakhair/chapter2_8f8MyfH.ipynb deleted file mode 100644 index 5bd122ad..00000000 --- a/sample_notebooks/ajinkyakhair/chapter2_8f8MyfH.ipynb +++ /dev/null @@ -1,337 +0,0 @@ -{ - "metadata": { - "name": "", - "signature": "sha256:74a00fabf3de3a229499fd336c46d9a546ea42ad7cb4fbe98a92a6ea72f21fa8" - }, - "nbformat": 3, - "nbformat_minor": 0, - "worksheets": [ - { - "cells": [ - { - "cell_type": "heading", - "level": 1, - "metadata": {}, - "source": [ - "Chapter 2: Bonding in Solids" - ] - }, - { - "cell_type": "heading", - "level": 2, - "metadata": {}, - "source": [ - "Example 2.1,Page number 62" - ] - }, - { - "cell_type": "code", - "collapsed": false, - "input": [ - "import math\n", - "\n", - "#Given Data\n", - "epsilon_0 = 8.854*10**-12; # Absolute electrical permittivity of free space, F/m\n", - "e = 1.6*10**-19; # Energy equivalent of 1 eV, eV/J\n", - "r = 3.147*10**-10; # Nearest neighbour distance for KCl, m\n", - "n = 9.1; # Repulsive exponent of KCl\n", - "A = 1.748; # Madelung constant for lattice binding energy\n", - "E = A*e**2/(4*math.pi*epsilon_0*r)*(n-1)/n/e; # Binding energy of KCl, eV\n", - "print\"The binding energy of KCl = \",round(E,4),\"eV\";\n" - ], - "language": "python", - "metadata": {}, - "outputs": [ - { - "output_type": "stream", - "stream": "stdout", - "text": [ - "The binding energy of KCl = 7.10982502818 eV\n" - ] - } - ], - "prompt_number": 5 - }, - { - "cell_type": "heading", - "level": 2, - "metadata": {}, - "source": [ - "Example 2.2,Page number 62" - ] - }, - { - "cell_type": "code", - "collapsed": false, - "input": [ - "import math\n", - "\n", - "#Given Data\n", - "\n", - "epsilon_0 = 8.854*10**-12; # Absolute electrical permittivity of free space, F/m\n", - "N = 6.023*10**23; # Avogadro's number\n", - "e = 1.6*10**-19; # Energy equivalent of 1 eV, eV/J\n", - "a0 = 5.63*10**-10; # Lattice parameter of NaCl, m\n", - "r0 = a0/2; # Nearest neighbour distance for NaCl, m\n", - "n = 8.4; # Repulsive exponent of NaCl\n", - "A = 1.748; # Madelung constant for lattice binding energy\n", - "E = A*e**2/(4*pi*epsilon_0*r0)*(n-1)/n/e; # Binding energy of NaCl, eV\n", - "print\"The binding energy of NaCl = \",round(E*N*e/(4.186*1000),4),\"kcal/mol\" ;\n" - ], - "language": "python", - "metadata": {}, - "outputs": [ - { - "output_type": "stream", - "stream": "stdout", - "text": [ - "The binding energy of NaCl = 181.1005 kcal/mol\n" - ] - } - ], - "prompt_number": 7 - }, - { - "cell_type": "heading", - "level": 2, - "metadata": {}, - "source": [ - "Example 2.3,Page number 62" - ] - }, - { - "cell_type": "code", - "collapsed": false, - "input": [ - "import math\n", - "\n", - "#Given Data\n", - "\n", - "epsilon_0 = 8.854*10**-12; # Absolute electrical permittivity of free space, F/m\n", - "N = 6.023*10**23; # Avogadro's number\n", - "e = 1.6*10**-19; # Energy equivalent of 1 eV, eV/J\n", - "E = 162.9*10**3; # Binding energy of KCl, cal/mol\n", - "n = 8.6; # Repulsive exponent of KCl\n", - "A = 1.747; # Madelung constant for lattice binding energy\n", - "# As lattice binding energy, E = A*e**2/(4*%pi*epsilon_0*r0)*(n-1)/n, solving for r0\n", - "r0 = A*N*e**2/(4*pi*epsilon_0*E*4.186)*(n-1)/n; # Nearest neighbour distance of KCl, m\n", - "print\"The nearest neighbour distance of KCl = \",round(r0*10**10,4),\"angstorm\";\n" - ], - "language": "python", - "metadata": {}, - "outputs": [ - { - "output_type": "stream", - "stream": "stdout", - "text": [ - "The nearest neighbour distance of KCl = 3.1376 angstorm\n" - ] - } - ], - "prompt_number": 12 - }, - { - "cell_type": "heading", - "level": 2, - "metadata": {}, - "source": [ - "Example 2.4,Page number 63" - ] - }, - { - "cell_type": "code", - "collapsed": false, - "input": [ - "import math\n", - "\n", - "#Given Data\n", - "\n", - "epsilon_0 = 8.854*10**-12; # Absolute electrical permittivity of free space, F/m\n", - "N = 6.023*10**23; # Avogadro's number\n", - "e = 1.6*10**-19; # Energy equivalent of 1 eV, eV/J\n", - "E = 152*10**3; # Binding energy of CsCl, cal/mol\n", - "n = 10.6; # Repulsive exponent of CsCl\n", - "A = 1.763; # Madelung constant for lattice binding energy\n", - "\n", - "# As lattice binding energy, E = A*e**2/(4*pi*epsilon_0*r0)*(n-1)/n, solving for r0\n", - "r0 = A*N*e**2/(4*pi*epsilon_0*E*4.186)*(n-1)/n; # Nearest neighbour distance of CsCl, m\n", - "print\"The nearest neighbour distance of CsCl = \",round(r0*10**10,4),\"angstrom\";\n" - ], - "language": "python", - "metadata": {}, - "outputs": [ - { - "output_type": "stream", - "stream": "stdout", - "text": [ - "The nearest neighbour distance of CsCl = 3.4776 angstrom\n" - ] - } - ], - "prompt_number": 13 - }, - { - "cell_type": "heading", - "level": 2, - "metadata": {}, - "source": [ - "Example 2.5,Page number 63" - ] - }, - { - "cell_type": "code", - "collapsed": false, - "input": [ - "import math\n", - "\n", - "#Given Data\n", - "\n", - "epsilon_0 = 8.854*10**-12; # Absolute electrical permittivity of free space, F/m\n", - "N = 6.023*10**23; # Avogadro's number\n", - "e = 1.6*10**-19; # Energy equivalent of 1 eV, eV/J\n", - "r0 = 6.46*10**-10; # Nearest neighbour distance of NaI\n", - "E = 157.1*10**3; # Binding energy of NaI, cal/mol\n", - "A = 1.747; # Madelung constant for lattice binding energy\n", - "\n", - "# As lattice binding energy, E = -A*e**2/(4*pi*epsilon_0*r0)*(n-1)/n, solving for n\n", - "n = 1/(1+(4.186*E*4*pi*epsilon_0*r0)/(N*A*e**2)); # Repulsive exponent of NaI\n", - "print\"\\nThe repulsive exponent of NaI = \",round(n,4);" - ], - "language": "python", - "metadata": {}, - "outputs": [ - { - "output_type": "stream", - "stream": "stdout", - "text": [ - "\n", - "The repulsive exponent of NaI = 0.363\n" - ] - } - ], - "prompt_number": 15 - }, - { - "cell_type": "heading", - "level": 2, - "metadata": {}, - "source": [ - "Example 2.6,Page number 63" - ] - }, - { - "cell_type": "code", - "collapsed": false, - "input": [ - "import math\n", - "\n", - "#Given Data\n", - "\n", - "e = 1.6*10**-19; # Energy equivalent of 1 eV, eV/J\n", - "a0 = 2.8158*10**-10; # Nearest neighbour distance of solid\n", - "A = 1.747; # Madelung constant for lattice binding energy\n", - "n = 8.6; # The repulsive exponent of solid\n", - "c = 2; # Structural factor for rocksalt\n", - "# As n = 1 + (9*c*a0**4)/(K0*e**2*A), solving for K0\n", - "K0 = 9*c*a0**4/((n-1)*e**2*A); # Compressibility of solid, metre square per newton\n", - "print\"The compressibility of the solid = \", \"{0:.3e}\".format(K0),\"metre square per newton\";" - ], - "language": "python", - "metadata": {}, - "outputs": [ - { - "output_type": "stream", - "stream": "stdout", - "text": [ - "The compressibility of the solid = 3.329e-01 metre square per newton\n" - ] - } - ], - "prompt_number": 18 - }, - { - "cell_type": "heading", - "level": 2, - "metadata": {}, - "source": [ - "Example 2.7,Page number 69" - ] - }, - { - "cell_type": "code", - "collapsed": false, - "input": [ - "import math\n", - "\n", - "#Given Data\n", - "\n", - "chi_diff = 1; # Electronegativity difference between the constituent of elements of solid\n", - "percent_ion = 100*(1-math.e**(-(0.25*chi_diff**2))); # Percentage ionic character present in solid given by Pauling\n", - "print\"The percentage ionic character present in solid = \",round(percent_ion,2),\"percent \";\n" - ], - "language": "python", - "metadata": {}, - "outputs": [ - { - "output_type": "stream", - "stream": "stdout", - "text": [ - "The percentage ionic character present in solid = 22.12 percent \n" - ] - } - ], - "prompt_number": 20 - }, - { - "cell_type": "heading", - "level": 2, - "metadata": {}, - "source": [ - "Example 2.8,Page number 69" - ] - }, - { - "cell_type": "code", - "collapsed": false, - "input": [ - "import math\n", - "\n", - "#Given Data\n", - "\n", - "Eh_GaAs = 4.3; # Homopolar gap of GaAs compound, eV\n", - "C_GaAs = 2.90; # Ionic gap of GaAs compound, eV\n", - "Eh_CdTe = 3.08; # Homopolar gap of CdTe compound, eV\n", - "C_CdTe = 4.90; # Ionic gap of CdTe compound, eV\n", - "\n", - "fi_GaAs = C_GaAs**2/(Eh_GaAs**2 + C_GaAs**2);\n", - "fi_CdTe = C_CdTe**2/(Eh_CdTe**2 + C_CdTe**2);\n", - "print\"The fractional ionicity of GaAs = \",round(fi_GaAs,4);\n", - "print\"The fractional ionicity of CdTe = \",round(fi_CdTe,4);\n" - ], - "language": "python", - "metadata": {}, - "outputs": [ - { - "output_type": "stream", - "stream": "stdout", - "text": [ - "The fractional ionicity of GaAs = 0.3126\n", - "The fractional ionicity of CdTe = 0.7168\n" - ] - } - ], - "prompt_number": 3 - }, - { - "cell_type": "code", - "collapsed": false, - "input": [], - "language": "python", - "metadata": {}, - "outputs": [] - } - ], - "metadata": {} - } - ] -}
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