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| author | hardythe1 | 2015-06-03 15:27:17 +0530 |
|---|---|---|
| committer | hardythe1 | 2015-06-03 15:27:17 +0530 |
| commit | 47d7279a724246ef7aa0f5359cf417992ed04449 (patch) | |
| tree | c613e5e4813d846d24d67f46507a6a69d1a42d87 /Integrated_Electronics/Chapter7.ipynb | |
| parent | 435840cef00c596d9e608f9eb2d96f522ea8505a (diff) | |
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diff --git a/Integrated_Electronics/Chapter7.ipynb b/Integrated_Electronics/Chapter7.ipynb new file mode 100755 index 00000000..da5e0b6b --- /dev/null +++ b/Integrated_Electronics/Chapter7.ipynb @@ -0,0 +1,316 @@ +{
+ "metadata": {
+ "name": ""
+ },
+ "nbformat": 3,
+ "nbformat_minor": 0,
+ "worksheets": [
+ {
+ "cells": [
+ {
+ "cell_type": "heading",
+ "level": 1,
+ "metadata": {},
+ "source": [
+ "Chapter 07 : Integrated Circuit Fabrication and Characteristic"
+ ]
+ },
+ {
+ "cell_type": "heading",
+ "level": 2,
+ "metadata": {},
+ "source": [
+ "Example 7.1, Page No 215"
+ ]
+ },
+ {
+ "cell_type": "code",
+ "collapsed": false,
+ "input": [
+ "import math\n",
+ "#initialisation of variables\n",
+ "\n",
+ "print('At distance equal to x=xi at which N = concentration n of doped silicon wafers , the net impurity density is zero. Thus xi is the distance at which junction is formed')\n",
+ "q = 1.6*(10**-19) #Charge of electron\n",
+ "yn=1300.0 #mobility of silicon\n",
+ "p = 0.5 #resistivity in ohm=cm\n",
+ "y=2.2\n",
+ "\n",
+ "#Calculations\n",
+ "t=2.0*3600 #in sec.\n",
+ "xi = 2.7*(10**-4) #Junction Depth in cm.\n",
+ "n = 1/(p*yn*q) #Concentration of doped silicon wafer\n",
+ "print(\"The concentration n = %.2f cm^-3 x 10^16\" %(n/10**16))\n",
+ "print('The junction is formed when N = n')\n",
+ "\n",
+ "#y = xi/(2*(D*t)^0.5)\n",
+ "D=((xi)**2/((2*y)**2*t)) #Diffusion Constant\n",
+ "\n",
+ "#Results\n",
+ "print(\"The value of Diffusion Constant for Boron = %.2f cm^2/sec X 10^-13\" %(D*10**13))"
+ ],
+ "language": "python",
+ "metadata": {},
+ "outputs": [
+ {
+ "output_type": "stream",
+ "stream": "stdout",
+ "text": [
+ "At distance equal to x=xi at which N = concentration n of doped silicon wafers , the net impurity density is zero. Thus xi is the distance at which junction is formed\n",
+ "The concentration n = 0.96 cm^-3 x 10^16\n",
+ "The junction is formed when N = n\n",
+ "The value of Diffusion Constant for Boron = 5.23 cm^2/sec X 10^-13\n"
+ ]
+ }
+ ],
+ "prompt_number": 1
+ },
+ {
+ "cell_type": "heading",
+ "level": 2,
+ "metadata": {},
+ "source": [
+ "Example 7.2, Page No 215"
+ ]
+ },
+ {
+ "cell_type": "code",
+ "collapsed": false,
+ "input": [
+ "import math\n",
+ "\n",
+ "#initialisation of variables\n",
+ "d=5.2*10**-13 #from previous example\n",
+ "depth=1.7*10**-4\n",
+ "t=2*3600.0\n",
+ "c=2.5*10**17 # boron concentration cm^3\n",
+ "\n",
+ "#Calculations\n",
+ "y = depth/(2*(math.sqrt(d*t)))\n",
+ "q=(c*(math.sqrt(math.pi*4*10**-13*3420)))/(math.exp(-((depth**2)/(4*4*10**-13*3420))))\n",
+ "\n",
+ "\n",
+ "#Results\n",
+ "print(\"The value of Y is = %.2f \" %(y))\n",
+ "print(\"The value of Q is = %.2f cm2 X 10^15 \" %(q/10**15))"
+ ],
+ "language": "python",
+ "metadata": {},
+ "outputs": [
+ {
+ "output_type": "stream",
+ "stream": "stdout",
+ "text": [
+ "The value of Y is = 1.39 \n",
+ "The value of Q is = 3.22 cm2 X 10^15 \n"
+ ]
+ }
+ ],
+ "prompt_number": 2
+ },
+ {
+ "cell_type": "heading",
+ "level": 2,
+ "metadata": {},
+ "source": [
+ "Example 7.3, Page No 222"
+ ]
+ },
+ {
+ "cell_type": "code",
+ "collapsed": false,
+ "input": [
+ "import math\n",
+ "\n",
+ "#initialisation of variables\n",
+ "y=100.0*10**-4 #mm\n",
+ "h=500.0 #cm^2/V-s\n",
+ "p=10.0**16 #boron of concentration\n",
+ "\n",
+ "\n",
+ "#Calculations\n",
+ "Rs=1.0/(1.6*10**-19*h*p*y)\n",
+ "\n",
+ "#Results\n",
+ "print(\"The value of Rs sheet resistance is = %.2f ohm/sqare\" %(Rs))\n"
+ ],
+ "language": "python",
+ "metadata": {},
+ "outputs": [
+ {
+ "output_type": "stream",
+ "stream": "stdout",
+ "text": [
+ "The value of Rs sheet resistance is = 125.00 ohm/sqare\n"
+ ]
+ }
+ ],
+ "prompt_number": 3
+ },
+ {
+ "cell_type": "heading",
+ "level": 2,
+ "metadata": {},
+ "source": [
+ "Example 7.4, Page No 223"
+ ]
+ },
+ {
+ "cell_type": "code",
+ "collapsed": false,
+ "input": [
+ "import math\n",
+ "\n",
+ "#initialisation of variables\n",
+ "Rs=100.0 #ohm/square\n",
+ "l=50.0 #mm\n",
+ "w=10 #mm\n",
+ "\n",
+ "\n",
+ "#Calculations\n",
+ "R=Rs*(l/w)\n",
+ "\n",
+ "#Results\n",
+ "print(\"The resistance of defused resistor is = %.2f ohm\" %(R))\n"
+ ],
+ "language": "python",
+ "metadata": {},
+ "outputs": [
+ {
+ "output_type": "stream",
+ "stream": "stdout",
+ "text": [
+ "The resistance of defused resistor is = 500.00 ohm\n"
+ ]
+ }
+ ],
+ "prompt_number": 4
+ },
+ {
+ "cell_type": "heading",
+ "level": 2,
+ "metadata": {},
+ "source": [
+ "Example 7.5, Page No 225"
+ ]
+ },
+ {
+ "cell_type": "code",
+ "collapsed": false,
+ "input": [
+ "import math\n",
+ "\n",
+ "#initialisation of variables\n",
+ "A=100*10**-8 #mm^2\n",
+ "q=1.6*10**-19\n",
+ "Nd=10**16 #donor concentration /cm^3\n",
+ "e=11.9*8.85*10**-14\n",
+ "Vj=0.82 #v\n",
+ "\n",
+ "\n",
+ "#Calculations\n",
+ "C=A*math.sqrt((q*Nd*e)/(2*Vj))\n",
+ "\n",
+ "#Results\n",
+ "print(\"The capacitance is = %.f fF\" %(C*10**15))\n"
+ ],
+ "language": "python",
+ "metadata": {},
+ "outputs": [
+ {
+ "output_type": "stream",
+ "stream": "stdout",
+ "text": [
+ "The capacitance is = 32 fF\n"
+ ]
+ }
+ ],
+ "prompt_number": 5
+ },
+ {
+ "cell_type": "heading",
+ "level": 2,
+ "metadata": {},
+ "source": [
+ "Example 7.6, Page No 225"
+ ]
+ },
+ {
+ "cell_type": "code",
+ "collapsed": false,
+ "input": [
+ "import math\n",
+ "\n",
+ "#initialisation of variables\n",
+ "A=100*10*10**-8 #mm^2\n",
+ "q=1.6*10**-19\n",
+ "e=11.9*8.85*10**-14\n",
+ "Vj=0.98 #v\n",
+ "Mn=1300.0\n",
+ "pn=0.01\n",
+ "\n",
+ "\n",
+ "\n",
+ "#Calculations\n",
+ "Nd=1/(q*Mn*pn) #donor concentration /cm^3\n",
+ "C=A*math.sqrt((q*Nd*e)/(2*Vj))\n",
+ "\n",
+ "#Results\n",
+ "print(\"The capacitance is = %.f pF\" %(C*10**12))\n"
+ ],
+ "language": "python",
+ "metadata": {},
+ "outputs": [
+ {
+ "output_type": "stream",
+ "stream": "stdout",
+ "text": [
+ "The capacitance is = 2 pF\n"
+ ]
+ }
+ ],
+ "prompt_number": 6
+ },
+ {
+ "cell_type": "heading",
+ "level": 2,
+ "metadata": {},
+ "source": [
+ "Example 7.7, Page No 226"
+ ]
+ },
+ {
+ "cell_type": "code",
+ "collapsed": false,
+ "input": [
+ "import math\n",
+ "\n",
+ "#initialisation of variables\n",
+ "e=3.9*8.85*10**-14\n",
+ "d=20*10**-8\n",
+ "\n",
+ "\n",
+ "#Calculations\n",
+ "C=(e/d)*(10**9/10**8)\n",
+ "\n",
+ "#Results\n",
+ "print(\"The capacitance per unit area is = %.2f fF/mM^2\" %(C*10**6))\n"
+ ],
+ "language": "python",
+ "metadata": {},
+ "outputs": [
+ {
+ "output_type": "stream",
+ "stream": "stdout",
+ "text": [
+ "The capacitance per unit area is = 17.26 fF/mM^2\n"
+ ]
+ }
+ ],
+ "prompt_number": 7
+ }
+ ],
+ "metadata": {}
+ }
+ ]
+}
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