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/* autogenerated from "macros/Electrical/NMOS.sci" */
function NMOS() {
NMOS.prototype.define = function NMOS() {
model = scicos_model();
W = 20.e-6;
L = 6.e-6;
Beta = 0.041e-3;
Vt = 0.8;
K2 = 1.144;
K5 = 0.7311;
dW = -2.5e-6;
dL = -1.5e-6;
RDS = 1.e+7;
model.sim = "NMOS";
model.blocktype = "c";
model.dep_ut = [true,false];
mo = modelica();
mo.model = "NMOS";
mo.outputs = [["D"],["B"],["S"]];
mo.inputs = "G";
mo.parameters = list([["W"],["L"],["Beta"],["Vt"],["K2"],["K5"],["dW"],["dL"],["RDS"]],[[W],[L],[Beta],[Vt],[K2],[K5],[dW],[dL],[RDS]]);
model.equations = mo;
model.in1 = ones(size(mo.inputs,"*"),1);
model.out = ones(size(mo.outputs,"*"),1);
exprs = [[string(W)],[string(L)],[string(Beta)],[string(Vt)],[string(K2)],[string(K5)],[string(dW)],[string(dL)],[string(RDS)]];
gr_i = [];
x = standard_define([2,2],model,exprs,gr_i);
x.graphics.in_implicit = ["I"];
x.graphics.out_implicit = [["I"],["I"],["I"]];
}
NMOS.prototype.details = function NMOS() {
}
NMOS.prototype.get = function NMOS() {
}
NMOS.prototype.set = function NMOS() {
x = arg1;
graphics = arg1.graphics;
exprs = graphics.exprs;
model = arg1.model;
while (true) {
[ok,W,L,Beta,Vt,K2,K5,dW,dL,RDS,exprs] = scicos_getvalue("Set NMOS Transistor block parameters",[["Width [m]"],["Length [m]"],["Transconductance parameter [A/(V*V)]"],["Zero bias threshold voltage [V]"],["Bulk threshold parameter"],["Reduction of pinch-off region"],["Narrowing of channel [m]"],["Shortening of channel [m]"],["Drain-Source-Resistance [Ohm]"]],list("vec",-1,"vec",-1,"vec",-1,"vec",-1,"vec",-1,"vec",-1,"vec",-1,"vec",-1,"vec",-1),exprs);
if (!ok) {
break;
}
model.equations.parameters[2-1] = list(W,L,Beta,Vt,K2,K5,dW,dL,RDS);
graphics.exprs = exprs;
x.graphics = graphics;
x.model = model;
break;
}
}
}
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