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| author | Sunil Shetye | 2018-06-18 23:41:23 +0530 |
|---|---|---|
| committer | Sunil Shetye | 2018-06-19 10:31:46 +0530 |
| commit | 1170404c7650cb531534b308f103c9b6abd50d14 (patch) | |
| tree | a6a61ae2a9a3592440483906ce6c7254b3243553 /js/Electrical/NMOS.js | |
| parent | cd5b0819762aa4a1cb72d29ab7b8c3ac65bbad76 (diff) | |
| download | sci2js-1170404c7650cb531534b308f103c9b6abd50d14.tar.gz sci2js-1170404c7650cb531534b308f103c9b6abd50d14.tar.bz2 sci2js-1170404c7650cb531534b308f103c9b6abd50d14.zip | |
handle multiple rows
Diffstat (limited to 'js/Electrical/NMOS.js')
| -rw-r--r-- | js/Electrical/NMOS.js | 10 |
1 files changed, 5 insertions, 5 deletions
diff --git a/js/Electrical/NMOS.js b/js/Electrical/NMOS.js index ce995a8d..0d2b3585 100644 --- a/js/Electrical/NMOS.js +++ b/js/Electrical/NMOS.js @@ -16,17 +16,17 @@ model.blocktype="c"; model.dep_ut=[true,false]; mo=modelica(); mo.model="NMOS"; -mo.outputs=["D","B","S"]; +mo.outputs=[["D"],["B"],["S"]]; mo.inputs="G"; -mo.parameters=list(["W","L","Beta","Vt","K2","K5","dW","dL","RDS"],[W,L,Beta,Vt,K2,K5,dW,dL,RDS]); +mo.parameters=list([["W"],["L"],["Beta"],["Vt"],["K2"],["K5"],["dW"],["dL"],["RDS"]],[[W],[L],[Beta],[Vt],[K2],[K5],[dW],[dL],[RDS]]); model.equations=mo; model.in1=ones(size(mo.inputs,"*"),1); model.out=ones(size(mo.outputs,"*"),1); -exprs=[string(W),string(L),string(Beta),string(Vt),string(K2),string(K5),string(dW),string(dL),string(RDS)]; +exprs=[[string(W)],[string(L)],[string(Beta)],[string(Vt)],[string(K2)],[string(K5)],[string(dW)],[string(dL)],[string(RDS)]]; gr_i=[]; x=standard_define([2,2],model,exprs,gr_i); x.graphics.in_implicit=["I"]; -x.graphics.out_implicit=["I","I","I"]; +x.graphics.out_implicit=[["I"],["I"],["I"]]; } NMOS.prototype.details = function NMOS() { } @@ -38,7 +38,7 @@ graphics=arg1.graphics; exprs=graphics.exprs; model=arg1.model; while (true) { -[ok,W,L,Beta,Vt,K2,K5,dW,dL,RDS,exprs]=scicos_getvalue("Set NMOS Transistor block parameters",["Width [m]","Length [m]","Transconductance parameter [A/(V*V)]","Zero bias threshold voltage [V]","Bulk threshold parameter","Reduction of pinch-off region","Narrowing of channel [m]","Shortening of channel [m]","Drain-Source-Resistance [Ohm]"],list("vec",-1,"vec",-1,"vec",-1,"vec",-1,"vec",-1,"vec",-1,"vec",-1,"vec",-1,"vec",-1),exprs); +[ok,W,L,Beta,Vt,K2,K5,dW,dL,RDS,exprs]=scicos_getvalue("Set NMOS Transistor block parameters",[["Width [m]"],["Length [m]"],["Transconductance parameter [A/(V*V)]"],["Zero bias threshold voltage [V]"],["Bulk threshold parameter"],["Reduction of pinch-off region"],["Narrowing of channel [m]"],["Shortening of channel [m]"],["Drain-Source-Resistance [Ohm]"]],list("vec",-1,"vec",-1,"vec",-1,"vec",-1,"vec",-1,"vec",-1,"vec",-1,"vec",-1,"vec",-1),exprs); if (!ok) { break; } |