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-- Copyright (C) 2000-2002 The University of Cincinnati.
-- All rights reserved.
-- This file is part of VESTs (Vhdl tESTs).
-- UC MAKES NO REPRESENTATIONS OR WARRANTIES ABOUT THE SUITABILITY OF THE
-- SOFTWARE, EITHER EXPRESS OR IMPLIED, INCLUDING BUT NOT LIMITED TO THE
-- IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE,
-- OR NON-INFRINGEMENT. UC SHALL NOT BE LIABLE FOR ANY DAMAGES SUFFERED BY
-- LICENSEE AS A RESULT OF USING, RESULT OF USING, MODIFYING OR
-- DISTRIBUTING THIS SOFTWARE OR ITS DERIVATIVES.
-- By using or copying this Software, Licensee agrees to abide by the
-- intellectual property laws, and all other applicable laws of the U.S.,
-- and the terms of this license.
-- You may modify, distribute, and use the software contained in this
-- package under the terms of the "GNU GENERAL PUBLIC LICENSE" version 2,
-- June 1991. A copy of this license agreement can be found in the file
-- "COPYING", distributed with this archive.
-- You should have received a copy of the GNU General Public License
-- along with VESTs; if not, write to the Free Software Foundation,
-- Inc., 59 Temple Place, Suite 330, Boston, MA 02111-1307 USA
-- ---------------------------------------------------------------------
--
-- $Id: static_pjfet.ams,v 1.1 2002-03-27 22:11:16 paw Exp $
-- $Revision: 1.1 $
--
-- ---------------------------------------------------------------------
-- This ckt is used to find the output and transfer characteristics of an
-- p-channel JFET model.
-- The model is Spice2 model, taken from the SPICE book, pg 142, fig 3.7
------------------------------------------------------------------------
-- The ckt used here is from sedra and smith's page no. 216, fig 5.20
------------------------------------------------------------------------
PACKAGE electricalSystem IS
NATURE electrical IS real ACROSS real THROUGH ground reference;
FUNCTION POW(X,Y: real) RETURN real;
FUNCTION SIN(X : real) RETURN real;
FUNCTION EXP(X : real) RETURN real;
FUNCTION SQRT(X : real) RETURN real;
END PACKAGE electricalSystem;
-----------------------------------------------------------------------
-- G D1 rd D
-- o-----|>|--o-------/\/\---------o
-- | |
-- - Id ( )
-- V |
-- - |
-- S1 o----------o
-- |
-- >
-- < rs
-- |
-- 0 S
-----------------------------------------------------------------------
----- P-JFET
--use std.textio.all;
use work.electricalsystem.all;
entity pjfet is
generic(T : real := 300.0;
vto : real := -2.0; -- Zero-bais threshold voltage
beta : real := 1.0e-4; -- transconductance parameter
lambda : real := 0.0; -- channel lenght modulation
af : real := 1.0; -- flicker noise exponent
kf : real := 0.0; -- flicker noise coefficient
iss : real := 1.0e-14; -- gate junction saturation current
pb : real := 1.0; -- gate junction potential
fc : real := 0.5; -- forward-bais depletion capacitance coeff
cgd : real := 4.0e-11; -- zero-bais gate-drain junction cap
cgs : real := 4.0e-11; -- zero-bias gate-source junction cap
rd : real := 1.0e-6; -- drain ohmic resistance
rs : real := 1.0e-6); -- source ohmic resistance
port (terminal g,s,d : electrical);
end entity pjfet;
architecture behav of pjfet is
terminal d1, s1 : electrical;
quantity vds across id through s1 to d1;
quantity vrd across ird through d1 to d;
quantity vrs across irs through s to s1;
quantity vgs across igs through s1 to g;
quantity vgd across igd through d1 to g;
constant gmin : real := 1.0e-12;
quantity ktq : real := 2.586e-2; -- (kT/q) thermal voltage at T=300K
--constant k : real := 1.38e-23; -- J/K ..... boltzman constant
-- T = 300 K ............ Absolute temperature
--constant q : real := 1.60e-19; -- C ....... magnitude of electron charge
quantity vds_free : real := 2.0;
quantity vgs_free : real := 0.0;
quantity vgd_free : real := 2.0;
begin
------ Setting initial conditions
initreg : break vgs => 0.0, vds => 2.0, vgd => 2.0;
therm_volt : ktq == 2.586e-2 * (T/300.0);
dres : vrd == ird * rd;
oup_res : vds_free == vds;
inp_res : vgs_free == vgs;
vgdf : vgd_free == vgd;
sres : vrs == irs * rs;
---- Current is in Amps.
-- Normal mode
------ Cut off Region
regions : if((vgs <= vto) and (vds >= 0.0))use
gncn : id == 1.0e-9 * vds;
------ Linear Region
elsif((vds < (vgs-vto)) and (vgs > vto) and (vds >= 0.0)) use
gnln : id == vds*beta*((2.0*(vgs_free-vto)) - vds_free)*(1.0 + lambda*vds_free);
------ Saturation Region
elsif((vds >= vgs-vto) and (vgs > vto) and (vds >= 0.0)) use
gnsn : id == beta*(pow((vgs_free-vto),2.0))*(1.0 + lambda*vds_free);
-- Inversted mode
------ Cut off Region
elsif((vgd <= vto) and (vds < 0.0))use
gnci : id == 1.0e-9 * vds;
------ Linear Region
elsif(((-1.0*vds) < (vgd-vto)) and (vgd > vto) and (vds < 0.0)) use
gnli : id == vds*beta*((2.0*(vgd_free-vto)) + vds_free)*(1.0 - lambda*vds_free);
------ Saturation Region
elsif(((-1.0*vds) >= vgd-vto) and (vgd > vto) and (vds < 0.0)) use
gnsi : id == -1.0*(beta)*(pow((vgd_free-vto),2.0))*(1.0 - lambda*vds_free);
end use;
----- Gate diode equations
initsub : break vgd => 0.0, vgs => 0.0, igs => 0.0, igd => 0.0;
----- Gate to source
subcond1 : if(vgs > -5.0*ktq) use
gsf : igs == ((iss*(exp(vgs/ktq) - 1.0)) + (gmin*vgs));
elsif(vgs <= -5.0*ktq ) use
gsr : igs == -1.0*iss + (gmin*vgs);
end use;
----- Gate to drain
subcond2 : if(vgd > -5.0*ktq) use
gdf : igd == ((iss*(exp(vgd/ktq) - 1.0)) + (gmin*vgd));
elsif(vgd <= -5.0*ktq ) use
gdr : igd == -1.0*iss + (gmin*vgd);
end use;
end architecture behav; --- of pjfet;
---- DC Voltage source
use work.electricalsystem.all;
entity DCVSrc is
generic (v : real := 10.0); -- voltage
port (terminal pos, neg : electrical);
end entity DCVSrc;
architecture behav of DCVSrc is
terminal temp : electrical;
quantity vdc across idc through temp to neg;
quantity vtemp across itemp through pos to temp;
begin
VSrc : vdc == v;
temp_volt : vtemp == itemp * 1.0e-03;
end architecture behav; --- of DCVSrc
------ pjfet amplifier circuit
use std.textio.all;
use work.electricalsystem.all;
entity pjfet_ckt is
end entity;
architecture test of pjfet_ckt is
terminal t1, t2, t3, t4: electrical;
-- quantity vin across iin through ain to electrical'reference;
-- quantity vout across iout through t2 to electrical'reference;
quantity vb across ib through t1 to t2;
-- quantity ibt through t1 to t2;
quantity vrd1 across ird1 through t3 to t4;
quantity vdd across idd through t1 to electrical'reference;
quantity vss across iss through t4 to electrical'reference;
-- signal vds_sig, vgs_sig : real := 0.0;
component pjfet_comp is
generic(T : real := 300.0;
vto : real := -2.0; -- Zero-bais threshold voltage
beta : real := 1.0e-4; -- transconductance parameter
lambda : real := 0.0; -- channel lenght modulation
af : real := 1.0; -- flicker noise exponent
kf : real := 0.0; -- flicker noise coefficient
iss : real := 1.0e-14; -- gate junction saturation current
pb : real := 1.0; -- gate junction potential
fc : real := 0.5; -- forward-bais depletion capacitance coeff
cgd : real := 4.0e-11; -- zero-bais gate-drain junction cap
cgs : real := 4.0e-11; -- zero-bias gate-source junction cap
rd : real := 1.0e-6; -- drain ohmic resistance
rs : real := 1.0e-6); -- source ohmic resistance
port (terminal g,s,d : electrical);
end component;
for all :pjfet_comp use entity work.pjfet(behav);
begin
jn1 : pjfet_comp
generic map(vto => -2.0, beta => 1.0e-3, lambda => 0.04)
port map(ground, t2, t3);
-- brk : break on vgs_sig,vds_sig;
-- inp : vin == vgs_sig;
-- oup : vout == vds_sig;
-- oup : vout == iout * 1.0e8;
-- cap : icout == 1.0e-13 * vcout'dot;
-- capbrk : break vcout => 0.0;
rd1 : vrd1 == ird1 * 2.0e3;
src1 : vdd == 5.0;
src2 : vss == -5.0;
curr : ib == 1.0e-3;
-- curt : vb == ibt * 1.0e6;
-- inputtestbench:PROCESS
-- FILE test_IN : text OPEN READ_MODE IS "pjfet_anal.in";
-- VARIABLE linebuf : line;
-- VARIABLE xds, xgs : real := 0.0;
-- BEGIN
-- WHILE(NOT(endfile(test_IN))) LOOP
-- readline(test_IN,linebuf);
-- read(linebuf,xgs);
-- read(linebuf,xds);
-- vgs_sig <= xgs;
-- vds_sig <= xds;
-- WAIT FOR 1 ns;
-- END LOOP;
-- WAIT;
-- END process; --- inputtestbench
end architecture test; -- pjfet_ckt
|
