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Diffstat (limited to 'testsuite/vests/vhdl-ams/ashenden/compliant/analog-modeling/diode.vhd')
-rw-r--r-- | testsuite/vests/vhdl-ams/ashenden/compliant/analog-modeling/diode.vhd | 54 |
1 files changed, 54 insertions, 0 deletions
diff --git a/testsuite/vests/vhdl-ams/ashenden/compliant/analog-modeling/diode.vhd b/testsuite/vests/vhdl-ams/ashenden/compliant/analog-modeling/diode.vhd new file mode 100644 index 0000000..aeb24de --- /dev/null +++ b/testsuite/vests/vhdl-ams/ashenden/compliant/analog-modeling/diode.vhd @@ -0,0 +1,54 @@ + +-- Copyright (C) 2002 Morgan Kaufmann Publishers, Inc + +-- This file is part of VESTs (Vhdl tESTs). + +-- VESTs is free software; you can redistribute it and/or modify it +-- under the terms of the GNU General Public License as published by the +-- Free Software Foundation; either version 2 of the License, or (at +-- your option) any later version. + +-- VESTs is distributed in the hope that it will be useful, but WITHOUT +-- ANY WARRANTY; without even the implied warranty of MERCHANTABILITY or +-- FITNESS FOR A PARTICULAR PURPOSE. See the GNU General Public License +-- for more details. + +-- You should have received a copy of the GNU General Public License +-- along with VESTs; if not, write to the Free Software Foundation, +-- Inc., 59 Temple Place, Suite 330, Boston, MA 02111-1307 USA + +library ieee, ieee_proposed; +use ieee.math_real.all; +use ieee_proposed.energy_systems.all; +use ieee_proposed.electrical_systems.all; +use ieee_proposed.thermal_systems.all; + +entity diode is + port ( terminal p, m : electrical; + terminal j : thermal ); +end entity diode; + +---------------------------------------------------------------- + +architecture one of diode is + + constant area : real := 1.0e-3; + constant Dn : real := 30.0; -- electron diffusion coefficient + constant Dp : real := 15.0; -- hole diffusion coefficient + constant np : real := 6.77e-5; -- minority charge density + constant pn : real := 6.77e-6; -- minority charge density + constant Ln : real := 5.47e-6; -- diffusion length for electrons + constant Lp : real := 12.25e-6; -- diffusion length for holes + quantity v across id through p to m; + quantity vt : voltage := 1.0; -- threshold voltage + quantity temp across power through j; + +begin + + vt == temp * K / Q; + + id == Q * area * (Dp * (pn / Lp) + Dn * (np / Ln)) * (exp(v / vt) - 1.0); + + power == v * id; + +end architecture one; |