blob: af77a9e9bfe65b07dee81af06e77052bfa3665ce (
plain)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
|
Code Model Test - 3d Table Model
* Inverter
*
*** analysis type ***
.control
*option reltol=0.1
dc V1 0 1.5 0.01
*op
*ac lin 11 100 200
*tran 100p 20n
*plot i(Vs) i(Vs2)
plot i(vsinv)
plot v(in1) v(out1)
plot deriv(v(out1))
.endc
*
*** input sources ***
*
v1 in1 0 DC 0.75 ac 1
Vs2 s2 0 0
vsinv vss 0 0
vdinv vdd 0 1.5
*
*********************
*xmosnt d g s tbmosn
*mn2 d g s2 s2 n1 l=0.13u w=10u ad=5p pd=6u as=5p ps=6u rgeoMod=1
.subckt inv vd vs in out
*mp2 out in vd vd p1 l=0.13u w=10u ad=5p pd=6u as=5p ps=6u
xmospt out in vd vd tbmosp
*mn2 out in vs vs n1 l=0.13u w=5u ad=5p pd=6u as=5p ps=6u
xmosnt out in vs vs tbmosn
.ends
xmosinv1 vdd vss in1 out1 inv
.subckt tbmosn d g s b
*** table model of mos transistor ***
cdg d g 0.01p
csg s g 0.014p
amos1 %vd(d s) %vd(g s) %vd(b s) %id(d s) mostable1
.model mostable1 table3d (offset=0.0 gain=0.5 order=2 file="bsim4n-3d-1.table")
* NMOS L=0.13u W=10.0u rgeoMod=1
* BSIM 4.7
* change width of transistor by modifying parameter "gain"
.ends
.subckt tbmosp d g s b
*** table model of pmos transistor ***
cdg d g 0.01p
csg s g 0.014p
amos2 %vd(d s) %vd(g s) %vd(b s) %id(d s) mostable2
.model mostable2 table3d (offset=0.0 gain=1 order=3 file="bsim4p-3d-1.table")
* PMOS L=0.13u W=10.0u rgeoMod=1
* BSIM 4.7
* change width of transistor by modifying parameter "gain"
.ends
.include ./modelcards/modelcard.nmos
.include ./modelcards/modelcard.pmos
.end
|