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***** Single NMOS Transistor .measure (Id-Vd) ***
m1 d g s b nch L=0.6u W=10.0u
vgs g 0 3.5
vds d 0 3.5
vs s 0 dc 0
vb b 0 dc 0
.dc vds 0 3.5 0.05 vgs 0.5 3.5 0.5
.print dc v(1) i(vs)
* model binning
.model nch.1 nmos ( version=4.4 level=54 lmin=0.1u lmax=20u wmin=0.1u wmax=10u )
.model nch.2 nmos ( version=4.4 level=54 lmin=0.1u lmax=20u wmin=10u wmax=100u )
.model pch.1 pmos ( version=4.4 level=54 lmin=0.1u lmax=20u wmin=0.1u wmax=10u )
.model pch.2 pmos ( version=4.4 level=54 lmin=0.1u lmax=20u wmin=10u wmax=100u )
.meas dc is_at FIND i(vs) AT=1
.meas dc is_max max i(vs) from=0 to=3.5
.meas dc vds_at2 when i(vs)=10m
.meas dc vd_diff1 trig i(vs) val=0.005 rise=1 targ i(vs) val=0.01 rise=1
.meas dc vd_diff2 trig i(vs) val=0.005 rise=1 targ i(vs) val=0.01 rise=2
.control
run
*rusage all
plot i(vs)
.endc
.end
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