diff options
Diffstat (limited to 'Windows/spice/examples/cider/bjt')
| -rw-r--r-- | Windows/spice/examples/cider/bjt/astable.cir | 34 | ||||
| -rw-r--r-- | Windows/spice/examples/cider/bjt/colposc.cir | 33 | ||||
| -rw-r--r-- | Windows/spice/examples/cider/bjt/ecp.cir | 57 | ||||
| -rw-r--r-- | Windows/spice/examples/cider/bjt/invchain.cir | 38 | ||||
| -rw-r--r-- | Windows/spice/examples/cider/bjt/meclgate.cir | 74 | ||||
| -rw-r--r-- | Windows/spice/examples/cider/bjt/pebjt.lib | 71 | ||||
| -rw-r--r-- | Windows/spice/examples/cider/bjt/pz.cir | 16 | ||||
| -rw-r--r-- | Windows/spice/examples/cider/bjt/rtlinv.cir | 29 | ||||
| -rw-r--r-- | Windows/spice/examples/cider/bjt/vco.cir | 45 |
9 files changed, 397 insertions, 0 deletions
diff --git a/Windows/spice/examples/cider/bjt/astable.cir b/Windows/spice/examples/cider/bjt/astable.cir new file mode 100644 index 00000000..bdb4a8a8 --- /dev/null +++ b/Windows/spice/examples/cider/bjt/astable.cir @@ -0,0 +1,34 @@ +Astable multivibrator + +vin 5 0 dc 0 pulse(0 5 0 1us 1us 100us 100us) +vcc 6 0 5.0 +rc1 6 1 1k +rc2 6 2 1k +rb1 6 3 30k +rb2 5 4 30k +c1 1 4 150pf +c2 2 3 150pf +q1 1 3 0 qmod area = 100p +q2 2 4 0 qmod area = 100p + +.option acct bypass=1 +.tran 0.05us 8us 0us 0.05us +.print tran v(1) v(2) v(3) v(4) + +.model qmod nbjt level=1 ++ x.mesh node=1 loc=0.0 ++ x.mesh node=61 loc=3.0 ++ region num=1 material=1 ++ material num=1 silicon nbgnn=1e17 nbgnp=1e17 ++ mobility material=1 concmod=sg fieldmod=sg ++ mobility material=1 elec major ++ mobility material=1 elec minor ++ mobility material=1 hole major ++ mobility material=1 hole minor ++ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5 ++ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0 ++ models bgnw srh conctau auger concmob fieldmob ++ options base.length=1.0 base.depth=1.25 + +.end diff --git a/Windows/spice/examples/cider/bjt/colposc.cir b/Windows/spice/examples/cider/bjt/colposc.cir new file mode 100644 index 00000000..bd4d31fa --- /dev/null +++ b/Windows/spice/examples/cider/bjt/colposc.cir @@ -0,0 +1,33 @@ +Colpitt's Oscillator Circuit + +r1 1 0 1 +q1 2 1 3 qmod area = 100p +vcc 4 0 5 +rl 4 2 750 +c1 2 3 500p +c2 4 3 4500p +l1 4 2 5uH +re 3 6 4.65k +vee 6 0 dc -15 pwl 0 -15 1e-9 -10 + +.tran 30n 12u +.print tran v(2) + +.model qmod nbjt level=1 ++ x.mesh node=1 loc=0.0 ++ x.mesh node=61 loc=3.0 ++ region num=1 material=1 ++ material num=1 silicon nbgnn=1e17 nbgnp=1e17 ++ mobility material=1 concmod=sg fieldmod=sg ++ mobility material=1 elec major ++ mobility material=1 elec minor ++ mobility material=1 hole major ++ mobility material=1 hole minor ++ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5 ++ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0 ++ models bgnw srh conctau auger concmob fieldmob ++ options base.length=1.0 base.depth=1.25 + +.options acct bypass=1 +.end diff --git a/Windows/spice/examples/cider/bjt/ecp.cir b/Windows/spice/examples/cider/bjt/ecp.cir new file mode 100644 index 00000000..6fb2bda9 --- /dev/null +++ b/Windows/spice/examples/cider/bjt/ecp.cir @@ -0,0 +1,57 @@ +Emitter Coupled Pair + +VCC 1 0 5v +VEE 2 0 0v +RCP 1 11 10k +RCN 1 21 10k +VBBP 12 0 3v AC 1 +VBBN 22 0 3v +IEE 13 2 0.1mA +Q1 11 12 13 M_NPN AREA=8 +Q2 21 22 13 M_NPN AREA=8 + +.DC VBBP 2.75v 3.25001v 10mv +.PRINT V(21) V(11) + +.MODEL M_NPN nbjt level=2 ++ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR ++ * Since, we are only simulating half of a device, we double the unit width ++ * 1.0 um emitter length ++ options defw=2.0u ++ ++ *x.mesh w=2.5 n=5 ++ x.mesh w=2.0 h.e=0.05 h.m=0.2 r=1.5 ++ x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5 ++ ++ y.mesh l=-0.2 n=1 ++ y.mesh l= 0.0 n=5 ++ y.mesh w=0.10 h.e=0.002 h.m=0.01 r=1.5 ++ y.mesh w=0.15 h.s=0.002 h.m=0.01 r=1.5 ++ y.mesh w=0.35 h.s=0.01 h.m=0.2 r=1.5 ++ y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5 ++ y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5 ++ ++ domain num=1 material=1 x.l=2.0 y.h=0.0 ++ domain num=2 material=2 x.h=2.0 y.h=0.0 ++ domain num=3 material=3 y.l=0.0 ++ material num=1 polysilicon ++ material num=2 oxide ++ material num=3 silicon ++ ++ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3 ++ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0 ++ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2 ++ ++ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.047 lat.rotate ++ doping gauss p.type conc=1e19 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0 ++ + char.l=0.094 lat.rotate ++ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3 ++ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3 ++ + char.l=0.100 lat.rotate ++ ++ method ac=direct itlim=10 ++ models bgn srh auger conctau concmob fieldmob + +.OPTIONS ACCT BYPASS=1 +.END diff --git a/Windows/spice/examples/cider/bjt/invchain.cir b/Windows/spice/examples/cider/bjt/invchain.cir new file mode 100644 index 00000000..92c6fad8 --- /dev/null +++ b/Windows/spice/examples/cider/bjt/invchain.cir @@ -0,0 +1,38 @@ +4 Stage RTL Inverter Chain + +vin 1 0 dc 0v pwl 0ns 0v 1ns 5v +vcc 12 0 dc 5.0v +rc1 12 3 2.5k +rb1 1 2 8k +q1 3 2 0 qmod area = 100p +rb2 3 4 8k +rc2 12 5 2.5k +q2 5 4 0 qmod area = 100p +rb3 5 6 8k +rc3 12 7 2.5k +q3 7 6 0 qmod area = 100p +rb4 7 8 8k +rc4 12 9 2.5k +q4 9 8 0 qmod area = 100p + +.print tran v(3) v(5) v(9) +.tran 1e-9 10e-9 + +.model qmod nbjt level=1 ++ x.mesh node=1 loc=0.0 ++ x.mesh node=61 loc=3.0 ++ region num=1 material=1 ++ material num=1 silicon nbgnn=1e17 nbgnp=1e17 ++ mobility material=1 concmod=sg fieldmod=sg ++ mobility material=1 elec major ++ mobility material=1 elec minor ++ mobility material=1 hole major ++ mobility material=1 hole minor ++ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5 ++ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0 ++ models bgnw srh conctau auger concmob fieldmob ++ options base.length=1.0 base.depth=1.25 + +.option acct bypass=1 +.end diff --git a/Windows/spice/examples/cider/bjt/meclgate.cir b/Windows/spice/examples/cider/bjt/meclgate.cir new file mode 100644 index 00000000..33542d5d --- /dev/null +++ b/Windows/spice/examples/cider/bjt/meclgate.cir @@ -0,0 +1,74 @@ +Motorola MECL III ECL gate +*.dc vin -2.0 0 0.02 +.tran 0.2ns 20ns +vee 22 0 -6.0 +vin 1 0 pulse -0.8 -1.8 0.2ns 0.2ns 0.2ns 10ns 20ns +rs 1 2 50 +q1 4 2 6 qmod area = 100p +q2 4 3 6 qmod area = 100p +q3 5 7 6 qmod area = 100p +q4 0 8 7 qmod area = 100p + +d1 8 9 dmod +d2 9 10 dmod + +rp1 3 22 50k +rc1 0 4 100 +rc2 0 5 112 +re 6 22 380 +r1 7 22 2k +r2 0 8 350 +r3 10 22 1958 + +q5 0 5 11 qmod area = 100p +q6 0 4 12 qmod area = 100p + +rp2 11 22 560 +rp3 12 22 560 + +q7 13 12 15 qmod area = 100p +q8 14 16 15 qmod area = 100p + +re2 15 22 380 +rc3 0 13 100 +rc4 0 14 112 + +q9 0 17 16 qmod area = 100p + +r4 16 22 2k +r5 0 17 350 +d3 17 18 dmod +d4 18 19 dmod +r6 19 22 1958 + +q10 0 14 20 qmod area = 100p +q11 0 13 21 qmod area = 100p + +rp4 20 22 560 +rp5 21 22 560 + +.model dmod d rs=40 tt=0.1ns cjo=0.9pf n=1 is=1e-14 eg=1.11 vj=0.8 m=0.5 + +.model qmod nbjt level=1 ++ x.mesh node=1 loc=0.0 ++ x.mesh node=10 loc=0.9 ++ x.mesh node=20 loc=1.1 ++ x.mesh node=30 loc=1.4 ++ x.mesh node=40 loc=1.6 ++ x.mesh node=61 loc=3.0 ++ region num=1 material=1 ++ material num=1 silicon nbgnn=1e17 nbgnp=1e17 ++ mobility material=1 concmod=sg fieldmod=sg ++ mobility material=1 elec major ++ mobility material=1 elec minor ++ mobility material=1 hole major ++ mobility material=1 hole minor ++ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5 ++ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0 ++ models bgnw srh conctau auger concmob fieldmob ++ options base.length=1.0 base.depth=1.25 + +.options acct bypass=1 +.print tran v(12) v(21) +.end diff --git a/Windows/spice/examples/cider/bjt/pebjt.lib b/Windows/spice/examples/cider/bjt/pebjt.lib new file mode 100644 index 00000000..afbdb36c --- /dev/null +++ b/Windows/spice/examples/cider/bjt/pebjt.lib @@ -0,0 +1,71 @@ +** +* Numerical models for a +* polysilicon emitter complementary bipolar process. +* The default device size is 1um by 10um (LxW) +** + +.model M_NPN nbjt level=1 ++ title One-Dimensional Numerical Bipolar ++ options base.depth=0.15 base.area=0.1 base.length=1.0 defa=10p ++ x.mesh loc=-0.2 n=1 ++ x.mesh loc=0.0 n=51 ++ x.mesh wid=0.15 h.e=0.0001 h.m=.004 r=1.2 ++ x.mesh wid=1.15 h.s=0.0001 h.m=.004 r=1.2 ++ domain num=1 material=1 x.l=0.0 ++ domain num=2 material=2 x.h=0.0 ++ material num=1 silicon ++ mobility mat=1 concmod=ct fieldmod=ct ++ material num=2 polysilicon ++ mobility mat=2 concmod=ct fieldmod=ct ++ doping gauss n.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047 ++ doping gauss p.type conc=5e18 x.l=-0.2 x.h=0.0 char.len=0.100 ++ doping unif n.type conc=1e16 x.l=0.0 x.h=1.3 ++ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 ++ models bgn srh auger conctau concmob fieldmob ^aval ++ method devtol=1e-12 ac=direct itlim=15 + +.model M_NPSUB numd level=1 ++ title One-Dimensional Numerical Collector-Substrate Diode ++ options defa=10p ++ x.mesh loc=1.3 n=1 ++ x.mesh loc=2.0 n=101 ++ domain num=1 material=1 ++ material num=1 silicon ++ mobility mat=1 concmod=ct fieldmod=ct ++ doping gauss n.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 ++ doping unif p.type conc=1e15 x.l=0.0 x.h=2.0 ++ models bgn srh auger conctau concmob fieldmob ^aval ++ method devtol=1e-12 itlim=10 + +.model M_PNP nbjt level=1 ++ title One-Dimensional Numerical Bipolar ++ options base.depth=0.2 base.area=0.1 base.length=1.0 defa=10p ++ x.mesh loc=-0.2 n=1 ++ x.mesh loc=0.0 n=51 ++ x.mesh wid=0.20 h.e=0.0001 h.m=.004 r=1.2 ++ x.mesh wid=1.10 h.s=0.0001 h.m=.004 r=1.2 ++ domain num=1 material=1 x.l=0.0 ++ domain num=2 material=2 x.h=0.0 ++ material num=1 silicon ++ mobility mat=1 concmod=ct fieldmod=ct ++ material num=2 polysilicon ++ mobility mat=2 concmod=ct fieldmod=ct ++ doping gauss p.type conc=3e20 x.l=-0.2 x.h=0.0 char.len=0.047 ++ doping gauss n.type conc=5e17 x.l=-0.2 x.h=0.0 char.len=0.200 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=1.3 ++ doping gauss p.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 ++ models bgn srh auger conctau concmob fieldmob ^aval ++ method devtol=1e-12 ac=direct itlim=15 + +.model M_PNSUB numd level=1 ++ title One-Dimensional Numerical Collector-Substrate Diode ++ options defa=10p ++ x.mesh loc=1.3 n=1 ++ x.mesh loc=2.0 n=101 ++ domain num=1 material=1 ++ material num=1 silicon ++ mobility mat=1 concmod=ct fieldmod=ct ++ doping gauss p.type conc=5e19 x.l=1.3 x.h=1.3 char.len=0.100 ++ doping unif n.type conc=1e15 x.l=0.0 x.h=2.0 ++ models bgn srh auger conctau concmob fieldmob ^aval ++ method devtol=1e-12 itlim=10 diff --git a/Windows/spice/examples/cider/bjt/pz.cir b/Windows/spice/examples/cider/bjt/pz.cir new file mode 100644 index 00000000..ad3ee675 --- /dev/null +++ b/Windows/spice/examples/cider/bjt/pz.cir @@ -0,0 +1,16 @@ +PZ Analysis of a Common Emitter Amplifier + +Vcc 1 0 5v +Vee 2 0 0v + +Vin 3 0 0.7838 AC 1 +RS 3 4 1K +Q1 5 4 2 M_NPN AREA=4 SAVE +RL 1 5 2.5k +CL 5 0 0.1pF + +.INCLUDE pebjt.lib + +.PZ 3 0 5 0 vol pz + +.END diff --git a/Windows/spice/examples/cider/bjt/rtlinv.cir b/Windows/spice/examples/cider/bjt/rtlinv.cir new file mode 100644 index 00000000..f45eb983 --- /dev/null +++ b/Windows/spice/examples/cider/bjt/rtlinv.cir @@ -0,0 +1,29 @@ +RTL inverter + +vin 1 0 dc 1 pwl 0 4 1ns 0 +vcc 12 0 dc 5.0 +rc1 12 3 2.5k +rb1 1 2 8k +q1 3 2 0 qmod area = 100p + +.option acct bypass=1 +.tran 0.5n 5n +.print tran v(2) v(3) + +.model qmod nbjt level=1 ++ x.mesh node=1 loc=0.0 ++ x.mesh node=61 loc=3.0 ++ region num=1 material=1 ++ material num=1 silicon nbgnn=1e17 nbgnp=1e17 ++ mobility material=1 concmod=sg fieldmod=sg ++ mobility material=1 elec major ++ mobility material=1 elec minor ++ mobility material=1 hole major ++ mobility material=1 hole minor ++ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5 ++ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0 ++ models bgnw srh conctau auger concmob fieldmob ++ options base.length=1.0 base.depth=1.25 + +.end diff --git a/Windows/spice/examples/cider/bjt/vco.cir b/Windows/spice/examples/cider/bjt/vco.cir new file mode 100644 index 00000000..d1b1a058 --- /dev/null +++ b/Windows/spice/examples/cider/bjt/vco.cir @@ -0,0 +1,45 @@ +Voltage controlled oscillator + +rc1 7 5 1k +rc2 7 6 1k + +q5 7 7 5 qmod area = 100p +q6 7 7 6 qmod area = 100p + +q3 7 5 2 qmod area = 100p +q4 7 6 1 qmod area = 100p + +ib1 2 0 .5ma +ib2 1 0 .5ma +cb1 2 0 1pf +cb2 1 0 1pf + +q1 5 1 3 qmod area = 100p +q2 6 2 4 qmod area = 100p + +c1 3 4 .1uf + +is1 3 0 dc 2.5ma pulse 2.5ma 0.5ma 0 1us 1us 50ms +is2 4 0 1ma +vcc 7 0 10 + +.model qmod nbjt level=1 ++ x.mesh node=1 loc=0.0 ++ x.mesh node=61 loc=3.0 ++ region num=1 material=1 ++ material num=1 silicon nbgnn=1e17 nbgnp=1e17 ++ mobility material=1 concmod=sg fieldmod=sg ++ mobility material=1 elec major ++ mobility material=1 elec minor ++ mobility material=1 hole major ++ mobility material=1 hole minor ++ doping unif n.type conc=1e17 x.l=0.0 x.h=1.0 ++ doping unif p.type conc=1e16 x.l=0.0 x.h=1.5 ++ doping unif n.type conc=1e15 x.l=0.0 x.h=3.0 ++ models bgnw srh conctau auger concmob fieldmob ++ options base.length=1.0 base.depth=1.25 + +.option acct bypass=1 +.tran 3us 600us 0 3us +.print tran v(4) +.end |