summaryrefslogtreecommitdiff
path: root/Windows/spice/examples/adms/ekv/ekv26_0u5.par
diff options
context:
space:
mode:
authorRahul Paknikar2021-01-08 12:47:23 +0530
committerGitHub2021-01-08 12:47:23 +0530
commite6f48f5b1bf22a1d048b44ed4416b4315a461306 (patch)
treefd357549a236cdc652f0b6d2919beee0cee7faa5 /Windows/spice/examples/adms/ekv/ekv26_0u5.par
parentac223c4a69c701ad0a247401acdc48b8b6b6dba6 (diff)
parent6b512cbf954273b0f21d3800d10a7ad42a759425 (diff)
downloadeSim-e6f48f5b1bf22a1d048b44ed4416b4315a461306.tar.gz
eSim-e6f48f5b1bf22a1d048b44ed4416b4315a461306.tar.bz2
eSim-e6f48f5b1bf22a1d048b44ed4416b4315a461306.zip
Merge pull request #161 from rahulp13/installersi2.1
fixed key issue for ubuntu 20+; updated installers for windows os
Diffstat (limited to 'Windows/spice/examples/adms/ekv/ekv26_0u5.par')
-rw-r--r--Windows/spice/examples/adms/ekv/ekv26_0u5.par155
1 files changed, 0 insertions, 155 deletions
diff --git a/Windows/spice/examples/adms/ekv/ekv26_0u5.par b/Windows/spice/examples/adms/ekv/ekv26_0u5.par
deleted file mode 100644
index 0e6c7835..00000000
--- a/Windows/spice/examples/adms/ekv/ekv26_0u5.par
+++ /dev/null
@@ -1,155 +0,0 @@
-**********************************************************************
-* EKV v2.6 parameters for 0.5um CMOS C. EPFL-LEG, 1999
-* ----------------------------------
-*
-* ELDO (LEVEL = 44) / PSPICE (LEVEL = 5) example parameter set
-* for the EKV v2.6 model is provided for NMOS and PMOS.
-*
-*
-* IMPORTANT NOTES:
-* ----------------
-*
-* Parameters do not correspond to a particular technology but
-* have reasonable values for standard 0.5um CMOS.
-* Not intended for use in real design.
-*
-* Includes all intrinsic model parameters. An example set for
-* extrinsic model parameters is provided.
-*
-* Geometry range: W >= 0.8um, L >= 0.5um
-* Voltage range: |Vgb| < 3.3V, |Vdb| < 3.3V, |Vsb| < 2V
-*
-* For use with either simulator, comment/uncomment respective lines.
-* Use of extrinsic model parameters and models (series resistance,
-* junction currents/capacitances) is in general simulator-dependent.
-*
-**********************************************************************
-
-* EKV v2.6 NMOS
-*---------------
-.MODEL NCH NMOS
-+ LEVEL = 44
-*** Setup Parameters
-*+ UPDATE = 2.6
-*+ XQC = 0.4
-*** Process Related Model Parameters
-+ COX = 3.45E-3
-+ XJ = 0.15E-6
-*** Intrinsic Model Parameters
-+ VTO = 0.6
-+ GAMMA = 0.71
-+ PHI = 0.97
-+ KP = 150E-6
-+ E0 = 88.0E6
-+ UCRIT = 4.5E6
-+ DL = -0.05E-6
-+ DW = -0.02E-6
-+ LAMBDA = 0.23
-+ LETA = 0.28
-+ WETA = 0.05
-+ Q0 = 280E-6
-+ LK = 0.5E-6
-*** Substrate Current Parameters
-+ IBN = 1.0
-+ IBA = 200E6
-+ IBB = 350E6
-*** Intrinsic Model Temperature Parameters
-+ TNOM = 25.0
-+ TCV = 1.5E-3
-+ BEX = -1.5
-+ UCEX = 1.7
-+ IBBT = 0.0
-*** 1/f Noise Model Parameters
-+ KF = 1E-27
-+ AF = 1
-*** Short-Distance Matching Statistical Parameters (for MC simulation only)
-*+ AVTO = 0 DEV = 10.0E-3 ; ELDO v4.6
-*+ AGAMMA = 0 DEV = 10.0E-3 ; ELDO v4.6
-*+ AKP = 0 DEV = 25.0E-3 ; ELDO v4.6
-*** Series Resistance and Area Calulation Parameters
-*+ RLEV = 3
-+ HDIF = 0.9E-6
-+ RSH = 510
-*** Junction Current Parameters
-*+ ALEV = 3
-+ JS = 8.0E-6
-+ JSW = 1.5E-10
-+ XTI = 0
-+ N = 1.5
-*** Junction Capacitances Parameters
-+ CJ = 8.0E-4
-+ CJSW = 3.0E-10
-+ MJ = 0.5
-+ MJSW = 0.3
-+ PB = 0.9
-+ PBSW = 0.5
-+ FC = 0.5
-*** Gate Overlap Capacitances
-+ CGSO = 1.5E-10
-+ CGDO = 1.5E-10
-+ CGBO = 4.0E-10
-
-
-* EKV v2.6 PMOS
-*---------------
-.MODEL PCH PMOS
-+ LEVEL = 44
-*** Setup Parameters
-*+ UPDATE = 2.6
-*+ XQC = 0.4
-*** Process Related Model Parameters
-+ COX = 3.45E-3
-+ XJ = 0.15E-6
-*** Intrinsic Model Parameters
-+ VTO = -0.55
-+ GAMMA = 0.69
-+ PHI = 0.87
-+ KP = 35.0E-6
-+ E0 = 51.0E6
-+ UCRIT = 18.0E6
-+ DL = -0.05E-6
-+ DW = -0.03E-6
-+ LAMBDA = 1.1
-+ LETA = 0.45
-+ WETA = 0.0
-+ Q0 = 200E-6
-+ LK = 0.6E-6
-*** Substrate Current Parameters
-+ IBN = 1.0
-+ IBA = 10E6
-+ IBB = 300E6
-*** Intrinsic Model Temperature Parameters
-+ TNOM = 25.0
-+ TCV = -1.4E-3
-+ BEX = -1.4
-+ UCEX = 2.0
-+ IBBT = 0.0
-*** 1/f Noise Model Parameters
-+ KF = 1.0E-28
-+ AF = 1
-*** Short-Distance Matching Statistical Parameters (for MC simulation only)
-*+ AVTO = 0 DEV = 10.0E-3 ; ELDO v4.6
-*+ AGAMMA = 0 DEV = 10.0E-3 ; ELDO v4.6
-*+ AKP = 0 DEV = 25.0E-3 ; ELDO v4.6
-*** Series Resistance and Area Calulation Parameters
-*+ RLEV = 3
-+ HDIF = 0.9E-6
-+ RSH = 990
-*** Junction Current Parameters
-*+ ALEV = 3
-+ JS = 4.0E-5
-+ JSW = 7.0E-10
-+ XTI = 0
-+ N = 1.8
-*** Junction Capacitances Parameters
-+ CJ = 8.0E-4
-+ CJSW = 4.0E-10
-+ MJ = 0.5
-+ MJSW = 0.35
-+ PB = 0.9
-+ PBSW = 0.8
-+ FC = 0.5
-*** Gate Overlap Capacitances
-+ CGSO = 1.5E-10
-+ CGDO = 1.5E-10
-+ CGBO = 4.0E-10