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author | Rahul Paknikar | 2021-01-08 12:47:23 +0530 |
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committer | GitHub | 2021-01-08 12:47:23 +0530 |
commit | e6f48f5b1bf22a1d048b44ed4416b4315a461306 (patch) | |
tree | fd357549a236cdc652f0b6d2919beee0cee7faa5 /Windows/spice/examples/adms/ekv/ekv26_0u5.par | |
parent | ac223c4a69c701ad0a247401acdc48b8b6b6dba6 (diff) | |
parent | 6b512cbf954273b0f21d3800d10a7ad42a759425 (diff) | |
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Merge pull request #161 from rahulp13/installersi2.1
fixed key issue for ubuntu 20+; updated installers for windows os
Diffstat (limited to 'Windows/spice/examples/adms/ekv/ekv26_0u5.par')
-rw-r--r-- | Windows/spice/examples/adms/ekv/ekv26_0u5.par | 155 |
1 files changed, 0 insertions, 155 deletions
diff --git a/Windows/spice/examples/adms/ekv/ekv26_0u5.par b/Windows/spice/examples/adms/ekv/ekv26_0u5.par deleted file mode 100644 index 0e6c7835..00000000 --- a/Windows/spice/examples/adms/ekv/ekv26_0u5.par +++ /dev/null @@ -1,155 +0,0 @@ -********************************************************************** -* EKV v2.6 parameters for 0.5um CMOS C. EPFL-LEG, 1999 -* ---------------------------------- -* -* ELDO (LEVEL = 44) / PSPICE (LEVEL = 5) example parameter set -* for the EKV v2.6 model is provided for NMOS and PMOS. -* -* -* IMPORTANT NOTES: -* ---------------- -* -* Parameters do not correspond to a particular technology but -* have reasonable values for standard 0.5um CMOS. -* Not intended for use in real design. -* -* Includes all intrinsic model parameters. An example set for -* extrinsic model parameters is provided. -* -* Geometry range: W >= 0.8um, L >= 0.5um -* Voltage range: |Vgb| < 3.3V, |Vdb| < 3.3V, |Vsb| < 2V -* -* For use with either simulator, comment/uncomment respective lines. -* Use of extrinsic model parameters and models (series resistance, -* junction currents/capacitances) is in general simulator-dependent. -* -********************************************************************** - -* EKV v2.6 NMOS -*--------------- -.MODEL NCH NMOS -+ LEVEL = 44 -*** Setup Parameters -*+ UPDATE = 2.6 -*+ XQC = 0.4 -*** Process Related Model Parameters -+ COX = 3.45E-3 -+ XJ = 0.15E-6 -*** Intrinsic Model Parameters -+ VTO = 0.6 -+ GAMMA = 0.71 -+ PHI = 0.97 -+ KP = 150E-6 -+ E0 = 88.0E6 -+ UCRIT = 4.5E6 -+ DL = -0.05E-6 -+ DW = -0.02E-6 -+ LAMBDA = 0.23 -+ LETA = 0.28 -+ WETA = 0.05 -+ Q0 = 280E-6 -+ LK = 0.5E-6 -*** Substrate Current Parameters -+ IBN = 1.0 -+ IBA = 200E6 -+ IBB = 350E6 -*** Intrinsic Model Temperature Parameters -+ TNOM = 25.0 -+ TCV = 1.5E-3 -+ BEX = -1.5 -+ UCEX = 1.7 -+ IBBT = 0.0 -*** 1/f Noise Model Parameters -+ KF = 1E-27 -+ AF = 1 -*** Short-Distance Matching Statistical Parameters (for MC simulation only) -*+ AVTO = 0 DEV = 10.0E-3 ; ELDO v4.6 -*+ AGAMMA = 0 DEV = 10.0E-3 ; ELDO v4.6 -*+ AKP = 0 DEV = 25.0E-3 ; ELDO v4.6 -*** Series Resistance and Area Calulation Parameters -*+ RLEV = 3 -+ HDIF = 0.9E-6 -+ RSH = 510 -*** Junction Current Parameters -*+ ALEV = 3 -+ JS = 8.0E-6 -+ JSW = 1.5E-10 -+ XTI = 0 -+ N = 1.5 -*** Junction Capacitances Parameters -+ CJ = 8.0E-4 -+ CJSW = 3.0E-10 -+ MJ = 0.5 -+ MJSW = 0.3 -+ PB = 0.9 -+ PBSW = 0.5 -+ FC = 0.5 -*** Gate Overlap Capacitances -+ CGSO = 1.5E-10 -+ CGDO = 1.5E-10 -+ CGBO = 4.0E-10 - - -* EKV v2.6 PMOS -*--------------- -.MODEL PCH PMOS -+ LEVEL = 44 -*** Setup Parameters -*+ UPDATE = 2.6 -*+ XQC = 0.4 -*** Process Related Model Parameters -+ COX = 3.45E-3 -+ XJ = 0.15E-6 -*** Intrinsic Model Parameters -+ VTO = -0.55 -+ GAMMA = 0.69 -+ PHI = 0.87 -+ KP = 35.0E-6 -+ E0 = 51.0E6 -+ UCRIT = 18.0E6 -+ DL = -0.05E-6 -+ DW = -0.03E-6 -+ LAMBDA = 1.1 -+ LETA = 0.45 -+ WETA = 0.0 -+ Q0 = 200E-6 -+ LK = 0.6E-6 -*** Substrate Current Parameters -+ IBN = 1.0 -+ IBA = 10E6 -+ IBB = 300E6 -*** Intrinsic Model Temperature Parameters -+ TNOM = 25.0 -+ TCV = -1.4E-3 -+ BEX = -1.4 -+ UCEX = 2.0 -+ IBBT = 0.0 -*** 1/f Noise Model Parameters -+ KF = 1.0E-28 -+ AF = 1 -*** Short-Distance Matching Statistical Parameters (for MC simulation only) -*+ AVTO = 0 DEV = 10.0E-3 ; ELDO v4.6 -*+ AGAMMA = 0 DEV = 10.0E-3 ; ELDO v4.6 -*+ AKP = 0 DEV = 25.0E-3 ; ELDO v4.6 -*** Series Resistance and Area Calulation Parameters -*+ RLEV = 3 -+ HDIF = 0.9E-6 -+ RSH = 990 -*** Junction Current Parameters -*+ ALEV = 3 -+ JS = 4.0E-5 -+ JSW = 7.0E-10 -+ XTI = 0 -+ N = 1.8 -*** Junction Capacitances Parameters -+ CJ = 8.0E-4 -+ CJSW = 4.0E-10 -+ MJ = 0.5 -+ MJSW = 0.35 -+ PB = 0.9 -+ PBSW = 0.8 -+ FC = 0.5 -*** Gate Overlap Capacitances -+ CGSO = 1.5E-10 -+ CGDO = 1.5E-10 -+ CGBO = 4.0E-10 |