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//Example number 9.3, Page number 203
clc;clear;
close;
//Variable declaration
e=1.6*10**-19; //charge(c)
ni=1.5*10**16; //particle density(per m**3)
mew_e=0.13; //electron mobility(m**2/Vs)
mew_h=0.05; //hole mobility(m**2/Vs)
ND=5*10**20; //density(per m**3)
//Calculation
sigma=ni*e*(mew_e+mew_h); //intrinsic conductivity(s)
sigma_d=ND*e*mew_e; //conductivity during donor impurity(ohm-1 m-1)
sigma_a=ND*e*mew_h; //conductivity during acceptor impurity(ohm-1 m-1)
//Result
printf("intrinsic conductivity is %.3e (ohm-m)^-1",sigma)
printf("\n conductivity during donor impurity is %.1f (ohm-m)^-1",sigma_d)
printf("\n conductivity during donor impurity is %.f (ohm-m)^-1",sigma_a)
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