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//Variable declaration
Rh=3.22*10**-4; //hall coefficient(m**3/C)
e=1.6*10**-19;
rho=8.5*10**-3; //resistivity(ohm m)
//Calculation
p=1/(Rh*e); //carrier concentration(per m**3)
mewp=Rh/rho; //mobility of holes(m**2/Vs)
//Result
printf('carrier concentration is %0.3f *10**21 per m**3 \n',(p/10**21))
printf('//mobility of holes is %0.3f m**2/Vs\n',(mewp))
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