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//Variable declaration
mewe=0.36; //mobility of electrons(m**2/Vs)
mewh=0.18; //mobility of holes(m**2/Vs)
e=1.6*10**-19;
ni=2.5*10**19; //intrinsic concentration(per m**3)
N=4.2*10**28; //avagadro number
//Calculation
n=N/10**6; //electron concentration(per m**3)
p=ni**2/n; //hole concentration(per m**3)
rhoi=1/(e*((n*mewe)+(p*mewh))); //resistivity(per ohm m)
//Result
printf('resistivity is %0.3f *10**-4 per ohm m \n',(rhoi*10**4))
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