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//Variable declaration
ni=2.5*10**19; //intrinsic concentration(per m**3)
mewn=0.4; //mobility of electrons(m**2/Vs)
mewp=0.2; //mobility of holes(m**2/Vs)
e=1.6*10**-19;
//Calculation
sigma_i=ni*e*(mewn+mewp);
rhoi=1/sigma_i; //resistivity(ohm m)
//Result
printf('resistivity is %0.3f ohm m \n',(rhoi))
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