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clc//
//
//
//Variable declaration
ni=1.5*10^16; //carrier density(per m^3)
mew_e=0.135; //electron mobility(m^2/Vs)
mew_h=0.048; //hole mobility(m^2/Vs)
e=1.6*10^-19;
Nd=10^23;
T=300; //temperature(K)
k=1.38*10^-23;
//Calculation
sigma=ni*e*(mew_e+mew_h); //conductivity(ohm-1 m-1)
p=ni^2/Nd; //hole concentration(per m^3)
sigma_ex=Nd*e*mew_e; //conductivity(ohm-1 m-1)
x=3*k*T*log(mew_e/mew_h)/4;
//Result
printf("\n conductivity is %0.3f *10^-3 ohm-1 m-1",sigma*10^3)
printf("\n hole concentration is %0.3f per m^3",p)
printf("\n conductivity is %0.3f *10^3 ohm-1 m-1",sigma_ex/10^3)
printf("\n position of fermi level is %0.2f eV",x/(1.6*10^-19))
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