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clc
A= 10^4*10^-8
disp("A= "+string(A)+"cm^2") //initializing value of diode area
Na=2*10^16
disp("Na = "+string(Na)+"cm^-3") //initializing value of p side doping
Nd=10^16
disp("Nd = "+string(Nd)+"cm^-3") //initializing value of n side doping
Dn = 20
disp("Dn= "+string(Dn)+"cm^2/s")//initializing value of electron diffusion coefficient
Dp = 12
disp("Dp= "+string(Dp)+"cm^2/s")//initializing value of hole diffusion coefficient
Tn = 10^-8
disp("Tn= "+string(Tn)+"s")//inializing value of electron minority carrier lifetime
Tp = 10^-8
disp("Tp= "+string(Tp)+"s")//inializing value of hole minority carrier lifetime
GL = 10^22
disp("GL= "+string(GL)+"cm^-3s^-1")//inializing value of rate of e-h pair production
kbT = 0.026
disp("kbT = "+string(kbT)+"V/K") //initializing value of kbT at 300K
Es = 11.9*8.85*10^-14
disp("Es = "+string(Es)) //initializing value of relative permitivity
e = 1.6*10^-19
disp("e= "+string(e)+"C")//initializing value of charge of electron
VR = 2
disp("VR= "+string(VR)+"V")//initializing value of Reverse bias voltage
ni = 1.5*10^10
disp("ni = "+string(ni)+"cm^-3") //initializing value of intrinsic carrier concentration
Ln = sqrt(Dn*Tn)
disp("The electron diffusion length is ,Ln = sqrt(Dn*Tn)= "+string(Ln)+"cm")//calculation
Lp = sqrt(Dp*Tp)
disp("The hole diffusion length is ,Lp = sqrt(Dp*Tp)= "+string(Lp)+"cm")//calculation
Vbi = kbT*log((Na*Nd)/(ni)^2)
disp("The built in voltage is ,Vbi = kbT*log((Na*Nd)/(ni)^2)= "+string(Vbi)+"V")//calculation
W = sqrt((2*Es*(Na+Nd)*(Vbi+VR))/(e*Na*Nd))
disp("The depletion width is ,W = sqrt((2*Es*(Na+Nd)*(Vbi+VR))/(e*Na*Nd))= "+string(W)+"cm")//calculation
IL= (e*A*GL*(W+Ln+Lp))
disp("The photocurrent is ,IL= (e*A*GL*(W+Ln+Lp)= "+string(IL)+"A")//calculation
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