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// Chapter 6 example 14
//------------------------------------------------------------------------------
clc;
clear;
// Given data
gm = 50*10^-3; // conductance in mho
cgs = 0.6*10^-12; // gate to source capacitance
cgd = 0.015*10^-12; // gate to drain capacitance
Rg = 3; // gate resistance in ohm
Rs = 2; // source resistance in ohm
Ri = 2.5; // intrinsic channel resistance
Rds = 400; // drain to source resistance
// Calculations
fT = gm/(2*%pi*cgs); // device's fT
t3 = 2*%pi*Rg*cgd;
r1 = (Rg+Rs+Ri)/Rds;
fmax = fT/(2*sqrt(r1 + (fT*t3))); // max usable frequency
if fmax>40*10^9 then
mprintf('Operation at 40 GHz is Theoretically possible\n');
end
// Output
mprintf(' fT = %3.1f Ghz\n fmax = %3.1f',fT/10^9,fmax/10^9 )
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