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// chapter 7 , Example 7.7 , pg 211
rho=2300 //resistivity (in ohm*m) for Si (value given in book is wrong)
ni=1.6*10^16 //intrinsic concentration (in m^-3)
Ue=0.15 //electron mobility (in m^2/(V*s))
e=1.6*10^-19 //charge of electron (in C)
// assuming 1*1*1 (in cm) dimension of Si crystal
l=10^-2 //length (in m)
b=10^-2 //breadth (in m)
w=10^-2 //width (in m)
Nsi=5*10^28 // (in atoms/m^3)
x=1/10^9 //doping concentration
A=l*b //area (in m^2)
R1=(rho*l)/A //resistance of pure Si crystal (in ohm)
Nd=Nsi*x //donor concentration (in m^-3)
p=ni^2/Nd //concentration of hole (in m^-3)
sigma=Nd*Ue*e //coductivity of doped Si (in ohm^-1*m^-1)
R=l/(sigma*A) //resistance of doped Si crystal (in ohm)
printf("Resistance of pure Si crystal (in ohm)")
disp(R1)
printf("Resistance of doped Si crystal (in ohm)")
disp(R)
//answer given is wrong
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