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// Scilab Code Ex6.4: Page-196 (2006)
clc; clear;
m = 9.11e-031; // Electron Rest Mass , kg
k = 1.38e-023; // Boltzmann constant, J/mol/K
h = 6.626e-034; // Planck's constant, Js
T = 300; // Room temperature, K
m_e = 0.068*m; // Mass of electron, kg
m_h = 0.56*m; // Mass of hole, kg
E_g = 1.42*1.6e-019; // Energy band gap for GaAs, J
n_i = 2*(2*%pi*k*T/h^2)^(3/2)*(m_e*m_h)^(3/4)*exp(-E_g/(2*k*T));
printf("\nThe Intrinsic carrier concentration of GaAs at 300 K = %1.0e per metre cube", n_i);
// Result
// The intrinsic carrier concentration of GaAs at 300 K = 3e+012 per metre cube
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