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diff --git a/911/CH4/EX4.1.a/ex_4_1_a.pdf b/911/CH4/EX4.1.a/ex_4_1_a.pdf
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+++ b/911/CH4/EX4.1.a/ex_4_1_a.pdf
diff --git a/911/CH4/EX4.1.a/ex_4_1_a.sce b/911/CH4/EX4.1.a/ex_4_1_a.sce
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+//example 4.1(a)//
+//the average power dissipation of a single NAND gate//
+clc
+//clears the variables//
+clear
+//clears the screen//
+//given//
+a=0.4
+//I(oh)max in mA//
+b=2.7
+//V(oh) min in V//
+c=2
+//V(ih) min in V//
+d=.8
+//V(il)max in V//
+e=.4
+//V(ol) max in V//
+f=8
+//I(ol)max in mA//
+g=.4
+//I(il)max in mA//
+h=20
+//I(ih) max in micro amp//
+i=1.6
+//I(cch)max in mA//
+j=4.4
+//I(ccl)max in mA//
+t=15
+//t(pLH)=t(pHL) in mA//
+disp('average supply current = ')
+s=(i+j)/2;
+u=5*s/4;
+disp('mA',s)
+disp('average power dissipation for one gate (in mW) is: ')
+disp(u)
+\ No newline at end of file