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diff --git a/73/CH5/EX5.4/Example5_4.sci b/73/CH5/EX5.4/Example5_4.sci new file mode 100755 index 000000000..bf26e8614 --- /dev/null +++ b/73/CH5/EX5.4/Example5_4.sci @@ -0,0 +1,12 @@ +//Chapter 5_Monolithic Components
+//Caption : Capacitance per unit area
+//Example5.4: Determine the capacitance per unit area of the 400 armstrong gate oxide of a MOSFET device relative permittivity of silicon dioxide=3.9.
+//Solution:
+clear;
+clc;
+Eo=8.86*10^-14;//permittivity of free space in F/cm
+Er=3.9;//relative permittivity of MOSFET device
+t=0.4*10^-5;//thickness of the gate oxide in cm
+Co=Eo*Er/t;// since capoacitance(C)=permittivity(E)*area(A)/thicknes(t); so C/A=e/t
+disp('capacitance per unit area of gate oxide is:')
+disp('F/cm^2',Co)
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