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diff --git a/73/CH3/EX3.2/Example3_2.sci b/73/CH3/EX3.2/Example3_2.sci new file mode 100755 index 000000000..d50dbfdbe --- /dev/null +++ b/73/CH3/EX3.2/Example3_2.sci @@ -0,0 +1,14 @@ +//Chapter 3_Semoconductor Devices Fundamentals
+//Caption : Resistivity
+//Example3.2: A Sample of Si is doped with 10^17 phosphorus atoms/cubic cm. What is its resistivity? Given Un=700square cm/v-sec.
+//Solution:
+clear;
+clc;
+function Res=resistivity(u,n)//n:doped concentration=10^17 atoms/cubic cm, u: mobility of electrons=700square cm/v-sec.
+ q=1.6*10^-19 //q:charge
+ Res=1/(q*u*n)// since P is neglegible.
+ disp('resistivity of the si doped with n-dopant is:')// include ";" at the time of calling
+ disp('ohm-cm',Res)
+endfunction
+// after executing calling resitivity( u=700 and n=10^17)i.e., resistivity(10^17,700);
+// Result: Resistivity of the Si doped with n-dopant is : 0.089 ohm-cm(approx)
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