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+// Example 4.1 : To determine operating point parameters
+L_min=0.4*10^-6; // (m)
+t_ox=8*10^-9; // (s)
+u_n=450*10^-4; // (A/V^2)
+V_t=0.7; // (V)
+e_ox=3.45*10^-11; 
+
+// 4.1a
+C_ox=e_ox/t_ox;
+disp(C_ox,"C_ox (F/m^2)")
+k_n=u_n*C_ox;
+disp(k_n,"k_n (A/V^2)")
+
+// 4.1b 
+// Operation in saturation region
+W=8*10^-6; // (m)
+L=0.8*10^-6; // (m)
+i_D=100*10^-6; // (A)
+V_GS=sqrt(2*L*i_D/(k_n*W)) +V_t;
+disp(V_GS,"V_GS (V)")
+V_DSmin=V_GS-V_t;
+disp(V_DSmin,"V_DSmin (V)")
+
+// 4.1c
+// MOSFET in triode region
+r_DS=1000; // (ohm)
+V_GS=1/(k_n*(W/L)*r_DS)+V_t;
+disp(V_GS,"V_GS (V)")
+\ No newline at end of file