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-rwxr-xr-x506/CH5/EX5.1.a/Example5_1a.sce44
-rwxr-xr-x506/CH5/EX5.1.b/Example5_1b.sce51
-rwxr-xr-x506/CH5/EX5.2.a/Example5_2a.sce45
-rwxr-xr-x506/CH5/EX5.2.b/Example5_2b.sce88
4 files changed, 228 insertions, 0 deletions
diff --git a/506/CH5/EX5.1.a/Example5_1a.sce b/506/CH5/EX5.1.a/Example5_1a.sce
new file mode 100755
index 000000000..f9d7ec518
--- /dev/null
+++ b/506/CH5/EX5.1.a/Example5_1a.sce
@@ -0,0 +1,44 @@
+clear;
+clc;
+
+//Example 1.1
+//Caption : Program to find transistor currents for npn transistor.
+
+//Given Values
+
+//Silicon Transistor
+B=100; //Beta
+Ico=20; //in nA
+Rc=3;
+Rb=200;
+Vbb=5; //in V
+Vcc=10; //in V
+Vbe=0.7; //in Active region
+
+//Applying KVL to base circuit
+
+//Vbb+Rb*Ib+Vbe=0
+
+Ib=(Vbb-Vbe)/Rb; //in mA
+
+//Ico<<Ib
+
+Ic=B*Ib; //in mA
+
+//To verify the Active region Assumption
+
+//Vcc+Rc*Ic+Vcb+Vbe=0
+
+Vcb=(-Rc*Ic)+Vcc-Vbe; //in V
+
+disp('V',Vcb,'Vcb = ');
+
+if(Vcb>0)
+ disp('Positive value of Vcb represents reversed biased collector junction and Transistor in active region');
+end
+
+disp('mA',Ic,'Current in transistor(Ic) is ');
+
+disp('mA',Ib,'Current in transistor(Ib) is ');
+
+//End
diff --git a/506/CH5/EX5.1.b/Example5_1b.sce b/506/CH5/EX5.1.b/Example5_1b.sce
new file mode 100755
index 000000000..eca43d709
--- /dev/null
+++ b/506/CH5/EX5.1.b/Example5_1b.sce
@@ -0,0 +1,51 @@
+clear;
+clc;
+
+//Example 1.2
+//Caption : Program to find transistor currents for npn transistor after adding resistor to circuit.
+
+//Given Values
+
+//Silicon Transistor
+B=100; //Beta
+Ico=20; //in nA
+Rc=3;
+Ico=20; //in nA
+Rb=200;
+Re=2;
+Vbb=5; //in V
+Vcc=10; //in V
+Vbe=0.7; //in Active region
+
+//Ico<<Ib Assuming
+
+//Itot=Ib+Ic=Ib+B*Ib=(B+1)*Ib
+
+//Applying KVL to base circuit
+
+//Vbb+Rb*Ib+Vbe+Re*Itot=0
+
+Ib=(Vbb-Vbe)/(Rb+(Re*(B+1))); //in mA
+
+Ic=B*Ib; //in mA
+
+//Hence Ico<<Ib
+
+//To verify the Active region Assumption
+
+//Vcc+Rc*Ic+Vcb+Vbe=0
+
+Vcb=(-Rc*Ic)+Vcc-Vbe-(Re*(B+1)*Ib); //in V
+
+disp('V',Vcb,'Vcb = ');
+
+if(Vcb>0)
+ disp('Positive value of Vcb represents reversed biased collector junction and Transistor in active region');
+end
+
+disp('mA',Ic,'Current in transistor(Ic) is ');
+
+disp('mA',Ib,'Current in transistor(Ib) is ');
+
+
+//End
diff --git a/506/CH5/EX5.2.a/Example5_2a.sce b/506/CH5/EX5.2.a/Example5_2a.sce
new file mode 100755
index 000000000..0afc44120
--- /dev/null
+++ b/506/CH5/EX5.2.a/Example5_2a.sce
@@ -0,0 +1,45 @@
+clear;
+clc;
+
+//Caption : Program to find transistor currents for npn transistor and check whether transistor is in saturation region or not.
+
+//Given Values
+
+//Silicon Transistor
+
+Rc=3;
+Rb=50;
+Vbb=5; //in V
+Vcc=10; //in V
+Vce=0.2; //in V
+Vbe=0.8; //in Active region
+hFE=100;
+
+//Assuming transistor in saturated region
+
+//Applying KVL to base circuit
+
+//Vbb+Rb*Ib+Vbe=0
+
+Ib=(Vbb-Vbe)/Rb; //in mA
+
+//Applying KVL to Collector circuit
+
+//Vcc+Rc*Ic+Vce=0
+
+Ic=(Vcc-Vce)/Rc; //in mA
+
+Ib_min=Ic/hFE;
+
+disp('mA',Ib_min,'Minimum Ib = ');
+
+if(Ib>Ib_min)
+ disp('Transistor in saturated Region');
+end
+
+disp('mA',Ic,'Current in transistor(Ic) is');
+
+disp('mA',Ib,'Current in transistor(Ib) is');
+
+
+//End
diff --git a/506/CH5/EX5.2.b/Example5_2b.sce b/506/CH5/EX5.2.b/Example5_2b.sce
new file mode 100755
index 000000000..8d2c3223c
--- /dev/null
+++ b/506/CH5/EX5.2.b/Example5_2b.sce
@@ -0,0 +1,88 @@
+clear;
+clc;
+
+//Caption : Program to find transistor currents for npn transistor and check whether transistor is in saturation region or not after adding a Emitter Transistor.
+
+//Given Values
+
+//Silicon Transistor
+
+Beta=100; //Beta
+Rc=3;
+Rb=50;
+Re=2;
+Vbb=5; //in V
+Vcc=10; //in V
+Vce=0.2; //in V
+Vbe=0.8; //in Active region
+hFE=100;
+
+//Assuming transistor in saturated region
+
+//Applying KVL to base circuit
+
+//-Vbb+Rb*Ib+Vbe+Re*(Ic+Ib)=0
+
+//Simplifing (Rb+Re)Ib+Re*Ic=Vbb-Vbe
+
+//Applying KVL to Collector circuit
+
+//-Vcc+Rc*Ic+Vce+Re*(Ic+Ib)=0
+
+//Simplifing Re*Ib+(Rc+Re)Ic=Vcc-Vce
+
+
+A=[(Rb+Re) Re;Re,(Rc+Re)];
+B=[(Vbb-Vbe);(Vcc-Vce)];
+X=A\B;
+Ib=X(1);
+Ic=X(2);
+
+Ib_min=Ic/hFE;
+
+disp('mA',Ib_min,'Minimum Ib = ');
+
+
+disp('mA',Ic,'Current in transistor(Ic)');
+
+disp('mA',Ib,'Current in transistor(Ib)');
+
+if(Ib>Ib_min)
+ disp('Transistor in Saturated Region');
+else
+ disp('Transistor not in Saturated Region.Hence must be operating in Active region');
+end
+
+//Ico<<Ib Assuming
+
+//Itot=Ib+Ic=Ib+B*Ib=(B+1)*Ib
+
+//Applying KVL to base circuit
+
+//Vbb+Rb*Ib+Vbe+Re*Itot=0
+
+Ib=(Vbb-Vbe)/(Rb+(Re*(Beta+1))); //in mA
+
+Ic=Beta*Ib; //in mA
+
+//Hence Ico<<Ib
+
+//To verify the Active region Assumption
+
+//Vcc+Rc*Ic+Vcb+Vbe=0
+
+Vcb=(-Rc*Ic)+Vcc-Vbe-(Re*(Beta+1)*Ib); //in V
+
+disp('V',Vcb,'Vcb = ');
+
+if(Vcb>0)
+ disp('Positive value of Vcb represents reversed biased collector junction and Transistor in active region');
+end
+
+disp('mA',Ic,'Current in transistor(Ic) is ');
+
+disp('mA',Ib,'Current in transistor(Ib) is ');
+
+
+
+//End