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+clear;
+clc;
+
+//Caption:Calculation of Sv
+//Given Data
+Vo=25;//in V
+ro=10;//in ohm
+
+Rz = 12;//in ohm
+Vo=25;//output voltage in V
+Vr = 7.5 + 7.5;//because two diodes are used
+Iz = 20;//in mA
+Ie2=10;//in mA
+Ic2 = Ie2;
+Icmax=30;//in mA
+Vcemax=45;//in V
+hFE2=220;
+hfe2=200;
+hie2=800;//in ohm
+Id=10;//in mA
+Il = 1000;//in mA
+Vi = 50;//in V
+dVi = 10; //change in input voltage
+dIl = 1;//change in load current
+
+//For D1 and D2 operate
+Iz = Id + Id;
+Rd = (Vo-Vr)/Id;
+
+Ib2 = (1000*Ic2)/hFE2;
+
+//Since we require I1>Ib2 , we select
+I1=10*(10^-3);//in A
+Vbe = 0.7;//in V
+
+V2 = Vbe + Vr;
+
+R1 = (Vo-V2)/I1;
+R2 = V2/I1;
+
+//We are selecting Texas Instruments 2N1722 silicon power transistor, so following parameters are required
+Ic1 = 1;//in A
+hFE1=125;
+hfe1=100;
+hie1=20;
+
+Ib1 =(1000*I1 + Il + Id)/hFE1;
+//The current through resistor R3
+I=Ib1 + Ic2;
+
+R3 = (Vi - (Vbe + Vo))/I;
+Gm = hfe2*(R2/(R2+R1))*(1/((R1*R2/(R1+R2))+hie2+(1+hfe2)*Rz)) ;
+Sv = (10^-3)/(Gm*R3);
+disp(Sv,'Sv=');
+
+//End
+\ No newline at end of file