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+clc; clear; close;
+
+Cl=100*(10^(-15));//in farad
+T=200*(10^(-12));//in seconds
+Reqn=12500;//in_ohms for_nmos_devices
+r=(0.7*Reqn*Cl)/T;
+disp(r,'W/L=');
+Wn=r*100;
+disp(Wn,'Wn for both nmos devices(in nanometer)=');
+Wp=4*Wn;
+disp(Wp,'Wp for both pmos devices(in nanometers)=' );
+//answers vary due to round off error