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+//Example number 9.14, Page number 209
+
+clc;clear;
+close;
+
+//Variable declaration
+RH=3.66*10**-4; //hall coefficient(m*3/c)
+rho_i=8.93*10**-3; //resistivity(ohm m)
+e=1.602*10**-19; //charge(c)
+//Calculation
+nh=1/(RH*e); //density of charge carriers(per m**3)
+mewh=1/(rho_i*nh*e); //mobility of charge carriers(m**2/Vs)
+//Result
+printf("density of charge carriers is %.4e per m^3",nh)
+printf("\n mobility of charge carriers is %.3f m^2/Vs",mewh)