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diff --git a/3754/CH16/EX16.6/16_6.sce b/3754/CH16/EX16.6/16_6.sce
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+clear//
+
+//Variables
+
+IDon = 10.0 //Drain current (in milli-Ampere)
+VGS = -12.0 //Gate-Source voltage (in volts)
+VGSth = -3.0 //Threshold Gate-Source voltage (in volts)
+VGS1 = -6.0 //Gate-Source voltage in another case (in volts)
+
+//Calculation
+
+K = IDon/(VGS - VGSth)**2 //Transconductance (milli-Ampere per volt)
+ID = (K) * (VGS1 - VGSth)**2 //Drain current (in milli-Ampere)
+
+
+//Result
+
+printf("\n Since the value of VGS is negative for the enhancement-type MOSFET ,this indicated that device is P-channel.")
+printf("\n The value of ID when VGS = -6 V is %0.3f mA.",ID)