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Diffstat (limited to '3710/CH7/EX7.6')
-rw-r--r-- | 3710/CH7/EX7.6/Ex7_6.sce | 30 |
1 files changed, 30 insertions, 0 deletions
diff --git a/3710/CH7/EX7.6/Ex7_6.sce b/3710/CH7/EX7.6/Ex7_6.sce new file mode 100644 index 000000000..6548c3a5d --- /dev/null +++ b/3710/CH7/EX7.6/Ex7_6.sce @@ -0,0 +1,30 @@ +//Example 7.6, Page Number 329
+//The Function fpround(dependency) is used to round a floating point number x to n decimal places
+//Depletion region thickness
+clc;
+
+//Taking Silicon Diode with moderately doped N-region
+V=100 //Applied Voltage in volts
+Nd=5*(10**21) //in per metre cube
+eo=8.85*(10**-12) //Absolute permittivity in farads per meter
+er=11.7
+e=1.6*(10**-19) //Charge of an electron in Coulombs
+
+//Using equation 7.31
+xn=sqrt((2*eo*er*V)/(e*Nd))
+
+ac=10**5 //Absorption Coefficient per meter
+
+//ignoring Fresnel reflection
+f=1-exp(-1*xn*ac)
+f=fpround(f,3)
+
+disp(xn,"The Depletion region thickness in m:")
+mprintf(" The Fraction of the incident radiation absorbed is: %.1f",f)
+
+//This is insufficient if a high efficiency photodiode is required
+//To absorb 80% of radiation,depletion region thickness has to be 20um wide
+xn=xn*(10**6)//This conversion is done to get the xn value as 5 which is used in the calculation of V1
+t=20
+V1=V*((t/int(xn))**2)
+mprintf("\nHence the required applied voltage is:%d V",V1)
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